78 DIOD Search Results

Contextual Info: SKN 45 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Rectifier Diode ! !  7 " ; 7  7 " ; 7 #$ 78=7 #$ 78=" #$ 78=; #$ 78=7 .  3 78 ( 1 9 ":  3 ;8 <+5 # 78=7 # 78=" # 78=; #$ 78=7   #$ 78= # 78=

PS18

Contextual Info: VBO 78 IdAV = 78 A VRRM = 800-1600 V Single Phase Rectifier Bridge in ECO-PAC 2 Preliminary data VRSM VRRM V V 900 1300 1500 1700 800 1200 1400 1600 PS18 Types ~L 9 ~ K10 VBO 78-08NO7 VBO 78-12NO7 VBO 78-14NO7 VBO 78-16NO7 Symbol Test Conditions IdAV ① TC = 100°C, module

Contextual Info: SK 80 D 12 F 3412 3442 342 5 6 78 #    % 3 3 9 6 78 :% ;.88 SEMITOP 3 Bridge Rectifier SK 80 D 12 F 1< 78  ;. Symbol Conditions Values Units 5 5442 ? 9 6 78 : 9!=6 ;.-: 1  +% 9!=6 .- ;.-%: 1 ) +% 78 ") >8 ") , 7% # #

Contextual Info: SKET 740 THYRISTOR BRIDGE,SCR,BRIDGE 12+3 1223 1%23 1 .;// 1 .9// 423+ 5 .#// 6 - *         461 5 78/ 6 (  .9/:  5 9$ 0&) +<  78/=.9> ?8 $"// $$// +<  78/=$$> ?8 Symbol Conditions Values Units 461  .9/:  5 9# (.//) 0&:

Contextual Info: SK 80 D 12 F 3412 3442 342 5 6 78 #    % 3 3 9 6 78 :% ;.88 SEMITOP 3 Bridge Rectifier SK 80 D 12 F Symbol Conditions 5 5442 ? 9 6 78 : 9!=6 ;.-: 1  +% 9!=6 .- ;.-%: 1 ) +% 54 9!=6 .- ;-8%:B 3463442 5 9!= 6 ;-8 :B ;8 

Contextual Info: SKET 740 THYRISTOR BRIDGE,SCR,BRIDGE +,"- +,-! +,- + &6 + &4( .1+ / 23( 1   &4(5  / 4*  "78 23(9&48 :3 *'( *( "78 23(9*8 :3 Symbol Conditions Values Units .1+  &4(5  / 40 &( )5 2( 36(  1  &4(5  / 40 &( )5 230 0*( 

LA 7831

Contextual Info: Am78/8831'Am78/8832 T h re e -S ta te Line Driver Distinctive Characteristics • Three-State Line Drivers pin-for-pin equivalent to the DM 78/8831 and D M 78/8832 • 4 0 m A sink and source current • Series 54 /74 com patible • Mode c o n tro l fo r quad single-ended o r dual d iffe re n ­

IR diodes TFK 4

Abstract: TTC 103 tfk bay 78 TFK diodes TTC 104 Diode BAY 80 4G75 BAY78 74343 diode s .* tfk
Contextual Info: BAY 78 Silizium-Epitaxial-Planar-Dioden-Quartett Silicon epitaxial planar diodes quad Anwendungen: Ringmodulatoren und Brückenschaltungen Applications: Ringmodulators and bridge circuits Abmessungen in mm Dimensions in mm 1 3 5 5_ -~r~ ?r 3 1 - 5 9,5 U — 9 .5 -»

Contextual Info: DPAD SERIES MONOLITHIC DUAL PICO AMPERE DIODES FEATURES Direct Replacement For SILICONIX DPAD SERIES HIGH ON ISOLATION 20fA EXCELLENT CAPACITANCE MATCHING ABSOLUTE MAXIMUM RATINGS ΔCR≤0.2pF DPAD DPAD1 TO-72 Top View TO-78 Top View Case & Substrate 1 @ 25°C unless otherwise stated

Contextual Info: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA. U.S.A. 92253 Tel: 760-564-8656 • Fax: 760-564-2414 1-800-831-4881 Email: sales@mdesemicondutor.com Web: www.mdesemiconductor.com MAX 40 Series PRELIMINARY HIGH CURRENT TRANSIENT VOLTAGE SUPPRESSOR TVS DIODE

20000W

Abstract: MAX-20
Contextual Info: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA, U.S.A. 92253 Tel: 760-564-8656 • Fax: 760-564-2414 1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com MAX 20 Cell Series HIGH CURRENT TRANSIENT VOLTAGE SUPPRESSOR TVS DIODE

150GD128D

Contextual Info: SKiM 150GD128D power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT 1 2 ( (78 12 : !"    . */ !64" 0(

ak23 diode

Abstract: surge protection mtbf AK23 EC28 EN61000-4-2 EN61000-4-3 EN61000-4-4 EN61000-4-5 MR05 MR24
Contextual Info: 78 STANDARD DC/DC CONVERTERS MR series 20 to 144 watts Features • Non-isolated DC/DC Converters • Wide Input Range • Environmentally Sealed Input Characteristics Ideally Suited For: Input Voltage: • Transportation • Computing • Instrumentation

GPS05560

Abstract: VPS05163 BSP 78
Contextual Info: HITFET=II.Generation BSP 78 Smart Lowside Power Switch Features Product Summary  Logic Level Input  Input Protection ESD  Thermal shutdown with auto restart  Overload protection  Short circuit protection  Overvoltage protection  Current limitation

Contextual Info: Hi-Reliability Optically Coupled Isolator JAN / JANTX / JANTXV 4N22, 4N23, 4N24 [A] Features: • TO-78 hermetically sealed package  High current transfer ratio  1 kV electrical isolation  Base contact provided for conventional transistor biasing

transistor 1012

Abstract: cs-102
Contextual Info: CS 102 Gallium Arsenide Optocoupler in a TO-78 Package Isocom Ltd supplies high reliability devices for applications requiring an operating temperature range of -55°C to +125°C e.g. military applications . Devices supplied are approved to BS9400, and have

ID100

Abstract: ID101 T071 ID101 diode
Contextual Info: DIMBHÎ^DIL ID 100, ID101I Low Leakage» M onolithic Dual Diode» FEATURES PIN CONFIGURATIONS • Ir = 0.1 pA typical • BVr > 30 V • Cr = 0.75 pF (typical) TO-71 TO-78 GENERAL DESCRIPTION The ID IO O and ID101 are m o n o lith ic dual diodes intended

369D

Abstract: NTD4857N NTD4857N-1G NTD4857N-35G NTD4857NT4G 369AC
Contextual Info: NTD4857N Power MOSFET 25 V, 78 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com

1N6621 JANTXV

Abstract: IN6620 1N6620 1N6621 1N6622 1N6623 1N6624 1N6625 IN662 DIODE MARKING EJL
Contextual Info: 1 N 6 6 2 0 th ru 1IU6625 MicrosemiCorp. f l'h a diode experts SANTA ANA, CA SCOTTSDALE, A Z For m ore inform ation cali: ULTRA FAST RECTIFIERS 602 941-6300 .030 ± .002 DIA. (.78) Features 1.0 MIN. (25.4) • • • • • • • AXIAL AND SURFACE MOUNT CONFIGURATIONS

Contextual Info: GE C P L E S S E Y S 1 M 1 i O N I U t: I O R s DC1575/78 SILICON SCHOTTKY X-BAND MICROSTRIP LOW DRIVE MIXER DIODES DESCRIPTION APPLICATIONS The DC1570 series are medium barrier height silicon mixer diodes intended primarily for operation as low drive mixer

DOPPLER 10.525

Abstract: NJR4178J Doppler Sensor motion sensor doppler NJR4178 x-band dro DOPPLER 10.525 ghz motion DOPPLER microwave doppler sensor microwave motion sensor
Contextual Info: X-band Doppler Sensor Module MODEL NO. NJR4175 / 76 / 77 / 78 / 81 / 78J <Description> This specification covers the general requirements for X-band microwave Doppler module. This module is designed for motion sensing applications. It consists of DRO Dielectric Resonator Oscillator , balanced

Contextual Info: SN74CBTD1G384 SINGLE FET BUS SWITCH WITH LEVEL SHIFTING www.ti.com SCDS066K – JULY 1998 – REVISED JUNE 2006 FEATURES • • • 5-Ω Switch Connection Between Two Ports TTL-Compatible Control Input Levels Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II

Contextual Info: 74 LS 3 78 Signetics Flip-Flop Hex D Flip-Flop With Clock Enable Product Specification Logic Products FEATURES • Ideal for addressable register applications • Six edge-triggered D flip-flops • Buffered common clock • Clock Enable for address and data synchronization applications

4857ng

Abstract: 57NG NTD4857NT4G 369D NTD4857N NTD4857N-1G NTD4857N-35G
Contextual Info: NTD4857N Power MOSFET 25 V, 78 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices