77X77 Search Results

GS 669

Abstract: MC008
Contextual Info: F=7 SGS-THOMSON * IM « SGSP358 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 77x77 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE:

Contextual Info: THIS DRAWI NG IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. F OR ALL PUBLICATIO N INTERNATIONAL REV ISIONS DIST L OC RIGHTS RESERVED. LTR DESCRIPTIO N ADDED Bl TOP «> TOP > OP 0. 4 M OF 0 .4 ( 0 29 JIJNI 0 E C R - I0 - 0 1 3 5 2 4

substitu bipolar transistors

Contextual Info: iC T SCS-THOMSON * 7 #. 68S0 gC? liLS TO©raO©S TECHNICAL NOTE POWER MOS IN SWITCHING AN EVALUATION METHOD AND A PRACTICAL EXAMPLE INTRODUCTION POWER MOS are used in switch mode power sup­ plies. H.F. welding systems, industrial ovens, re­ lay drivers and other similar applications. These

Contextual Info: June 1997 JS9P11-AS J S 9 P 1 1 - A S 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL Output Power at 1dB Ta= 25 °C CONDITION MIN. TYP. MAX. UNIT PidB — 25.0 — dBm — 8.0 — dB Compression Point GidB Power Gain at 1dB VDS= 4.5V f= 31GHz Compression Point

ACCM 5 pin

Contextual Info: ADE-203-304 C (Z) HM5216805 Series HM5216405 Series 1048576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2097152-word x 4-bit x 2-bank Synchronous Dynamic RAM Prelim inary HITACHI A ll inputs and outputs are referred to the rising edge of the clock input. The HM5216805 Series,

Contextual Info: THI S DRAWI NG IS UNPUBL I SHED. COPYRI GHT 201 1 By T y c o RELEASED ALL E l e c t r o n i c s Ja pa n G K. FOR P U B L I C A T I O N RI GHTS JUN , 2011. LOC REV IS IO N S RESERVED. DESCRI PTION LTR .425 7 7 0 0. 45 0) V AA-AB W PER 005140 ECO- DWN DATE

Contextual Info: DIGITAL VIDEO & DIGITAL SIGNAL PROCESSING IC Handbook GEC P L E S S E Y SEMICONDUCTORS Foreword GEC Plessey Semiconductors has substantially increased its activities in Digital Video developments since the last issue of this handbook in December 1993 . A

2x10 box male

Abstract: AR60A 5MHz OCXO rubidium OCXO mtbf 710C
Contextual Info: Rubidium Clock AR40A COMMERCIAL RUBIDIUM ATOMIC FREQUENCY STANDARD Key Features Output Frequency: 10MHz other frequency opt. Low Aging: Temperature: 5 x10 −10 per year −10 -5ºC to +50ºC ±1x10 Supply Options: 15VDC, 12VDC, 28VDC Power consumption:

Contextual Info: June 1997 JS9P11-AS J S 9 P 1 1 -A S 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL Output Power at 1dB Ta» 25 °C CONDITION MIN. TYP. MAX. UNIT PidB — 25.0 — dBm — 8.0 — dB — — 300 — mA 20 — % Compression Point Power Gain at 1dB

PDSP16256ACO

Abstract: 8C80 DIODE A7N CR14 PDSP16256 PDSP16350 PDSP16510 cr120 F31 DIODE
Contextual Info: PLESSEY S EM IC O N D U C T O R S PDSP16256 /A PROGRAMMABLE FIR FILTER SUPERSEDES MARCH1990 EDITION The PD SP16256/A contains sixteen multiplier - accum u­ lators, which can be multi cycled to provide from 16 to 128 stages of digital filtering. It accepts 16 bit data and coefficients,