77A DIODE Search Results

AN-994

Abstract: IRF3704 IRF3704L IRF3704S ed 77A DIODE
Contextual Info: PD - 93888B IRF3704 IRF3704S IRF3704L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l HEXFET Power MOSFET VDSS RDS on max ID 20V 9.0mΩ 77A… High Frequency Buck Converters for

PF6-40

Contextual Info: APT77N60JC3 600V 77A 0.035Ω Super Junction MOSFET COOLMOS • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • N-Channel Enhancement Mode • Popular SOT-227 Package ID SO "UL Recognized" ISOTOP

transistors mj 1504

Contextual Info: APT77N60JC3 600V 77A 0.035Ω Super Junction MOSFET COOLMOS • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • N-Channel Enhancement Mode • Popular SOT-227 Package ID SO "UL Recognized" ISOTOP

AN-994

Abstract: IRF3704 IRF3704L IRF3704S ed 77A DIODE
Contextual Info: PD - 93888B IRF3704 IRF3704S IRF3704L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l HEXFET Power MOSFET VDSS RDS on max ID 20V 9.0mΩ 77A… High Frequency Buck Converters for

ed 77A DIODE

Abstract: AN-994 IRF3704 IRF3704L IRF3704S
Contextual Info: PD - 93888A IRF3704 IRF3704S IRF3704L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l HEXFET Power MOSFET VDSS RDS on max ID 20V 9.0mΩ 77A High Frequency Buck Converters for

APT50M50JVR

Contextual Info: APT50M50JVR 77A 0.050Ω 500V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT50M50JVFR

Contextual Info: APT50M50JVFR 77A 0.050Ω 500V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT77N60JC3

Abstract: transistors mj 1504
Contextual Info: APT77N60JC3 600V 77A 0.035Ω Super Junction MOSFET S S COOLMOS 27 2 T- D G SO Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • N-Channel Enhancement Mode • Popular SOT-227 Package

APT77N60JC3

Abstract: transistors mj 1504
Contextual Info: APT77N60JC3 0.035Ω 600V 77A Super Junction MOSFET S S COOLMOS 27 2 T- D G SO Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Popular SOT-227 Package • N-Channel Enhancement Mode

APT60DF60

Abstract: 77A DIODE APT50M60L2VFR diode 77a
Contextual Info: APT50M60L2VFR 500V 77A 0.060Ω POWER MOS V FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

ed 77A DIODE

Abstract: 77A DIODE APT50M60L2VR DIODE ED 92
Contextual Info: APT50M60L2VR 500V 77A 0.060W POWER MOS V TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

IRL3705N

Contextual Info: PD - 9.1370B IRL3705N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.01Ω G Description ID = 77A…

Contextual Info: APT50M60L2VFR 500V 0.060Ω 77A POWER MOS V FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT50M60L2VR 0.060Ω 500V 77A POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT50M60L2VR

Abstract: 77A DIODE
Contextual Info: APT50M60L2VR 500V 77A 0.060Ω POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT77N60JC3

Contextual Info: APT77N60JC3 600V 77A 0.035Ω Super Junction MOSFET S S COOLMOS 27 2 T- D G SO Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • N-Channel Enhancement Mode • Popular SOT-227 Package

Contextual Info: APT77N60BC6 APT77N60SC6 600V COOLMOS 77A 0.041 Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extremedv/dt Rated D • Popular TO-247 or Surface Mount D3 package.

APT77N60JC3

Contextual Info: APT77N60JC3 600V 77A 0.035Ω Super Junction MOSFET S S COOLMOS 27 2 T- D G SO Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Popular SOT-227 Package • N-Channel Enhancement Mode

ed 77A DIODE

Abstract: APT50M50JLC 77A DIODE ed 77A
Contextual Info: APT50M50JLC 77A 0.050 W 500V POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,

transistors mj 1504

Abstract: mj 1504 APT77N60JC3 ce 77a diode 77a
Contextual Info: APT77N60JC3 0.035Ω 600V 77A Super Junction MOSFET S S • Ultra Low RDS ON D G • Low Miller Capacitance S • Ultra Low Gate Charge, Qg • Avalanche Energy Rated OT 22 7 "UL Recognized" file # E145592 IS OTO P • Extreme dv/dt Rated D • Dual die (parallel)

50V 60A MOSFET

Abstract: Fast Recovery Bridge Rectifier, 60A, 600V MOSFET 600v 60a MIC4452
Contextual Info: APT77H60J 600V, 77A, 0.065Ω Max, trr ≤300ns N-Channel Ultrafast Recovery FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for maximum reliability in ZVS phase shifted bridge and other circuits through much reduced

Contextual Info: Philips S em iconductors • b b S B IB l DQ EbS7T 77A M APX Prelim inary specification BAT81/82/83 Schottky barrier diodes N AH ER P H I L I P S / D I S C R E T E DESCRIPTION General purpose and switching Schottky barrier diodes in a SOD68 envelope, with an integrated

APT77N60BC6

Abstract: APT77N60SC6
Contextual Info: APT77N60BC6 APT77N60SC6 600V COOLMOS 77A 0.041Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package.

ed 77A DIODE

Abstract: APT50M50JLC
Contextual Info: APT50M50JLC 77A 0.050 W 500V POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,