7777T Search Results

4N500

Abstract: IC 741 cn
Contextual Info: b427555 GG42530 Tfc.7 « N E C E / / MOS INTEGRATED CIR CU IT ju P D 4 2 S 1 6 1 9 0 , 4 2 S 1 7 1 9 0 , 4 2 S 1 8 1 9 0 16 M B IT D Y N A M IC RAM FA S T PA G E M O D E & B Y T E W R IT E M O DE - P R E LIM IN A R Y -D E S C R IP T IO N

SMD W2T

Abstract: w2t smd BTS 131 SMD MBA IST DATE SHEET SN54ACT3632
Contextual Info: • fl^bi723 aiiossT ist. ■ SN54ACT3632 512x36x2 CLOCKED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY _ _ S G B S310-SEPTEM BER 1996 * Free-Running CLKA and CLKB Can Be Asynchronous or Coincident ► Two Independent 512 x 36 Clocked FIFOs

KM62256C

Abstract: KM62256CL km62256cls KM62256CL-7
Contextual Info: CMOS SRAM KM62256CL / CL-L 32Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • F a st A cce ss T im e : 55, 7 0 n s M ax. ■ Low P o w e r D issip a tio n S ta n d b y (C M O S ): 5 5 0 |iW (m a x.) L V e rsio n 1 1 0 |iW (m a x.) LL V e rsio n

2114 ram

Abstract: 5 pin reset ic ARB AIC-300F 2114 Ram pinout 18
Contextual Info: AIC-300F adaptec, inc. Dual-Poit Buffer Controller PRELIMINARY June 1987 • 16-Bit Buffer Addressing csA0A1 A2A3A4 A5A6A7SHP OR A 8 SDP OR A 9 ALE . RST . PORT A REQ CLK . RD . WR A/D7 A/D6 GND - 1 2 3 4 5 6 7 8 9 AIC-300F 10 DUAL PORT 11' BUFFER 12 CONTROLLER

cdfp1

Abstract: 29C040 qml-38535 GDIP1-T32 CDFP1-F32
Contextual Info: REVISIONS LTR DATE DESCRIPTION APPROVED YR-MO-DA REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS PMIC N.'ft. STAND ARD IZED M IL IT A R Y DRAWING THIS M A U I MB IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A

qml-38535

Abstract: Device Marking A3 GDIP1-T28
Contextual Info: REVISIONS D A T E YR-MO-DA DESCRIPTION LTR APPROVED REV SHEET REV SHEET 15 16 17 REV STATUS OF S H E E T S PMIC N/A STANDARDIZED MILITARY DRAWING THIS DRAUING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT Of DEFENSE 18 REV 10 SHEET

68 1103

Abstract: KM681000BL A14F
Contextual Info: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM 681000BUBL-L is a 1,048,576-bit high-speed Static Random Access Memory organized as131,072 words by 8 bits. The device is fabricated using Samsung's advanced

UT-34-SP

Abstract: Gigabit Logic 5sh3
Contextual Info: TE K T R O N I X INC/ TRI âU I N T SbE » B fl'JOfc.aifl G Q Q Q S R R S H T R Ö 'T'-S Z-ivo 7 Im E iL i G ig a B it L o g ic 16G076 LED Driver 1 G b it/s N R Z D a ta R a te FEATURES >1-150 mA output current • DC-blocked ECL, GaAs PicoLogic compatible

Contextual Info: HM538122 Series Preliminary 131,072 x 8-Bit Multiport CMOS Video Random Access Memory • DESCRIPTION HM 538122JP Series The HM538122 is a 1-Mbit multiport video RAM equipped with a 128k-word x 8 -bit dynamic RAM and a 256-word x 8 -bit SAM serial access memory . Its RAM

Contextual Info: MOSEL VITELIC V63C31321024 32K X 32 CMOS SYNCHRONOUS BURST PIPELINED SRAM PRELIMINARY Features Functional Description • ■ ■ ■ ■ ■ ■ ■ ■ The V63C31321024 is a high-speed synchro­ nous burst pipelined CMOS SRAM organized as 32,768 words by 32 bits that supports both ¡486/

cd 3313 eo

Abstract: SIS630 sis 630 TFK U 111 B TFK U 4311 B 340S2 tfk 014 TFK S 153 P 101 SIS-630 PPCV
Contextual Info: 13/ SlEYiCTRL Q RTTCTWL 340S2 REV: 05 PN:37-38016U -50 -JiliSMCEIHERMON ,AU1 Afc£2ac 23 23 23 .AN31 A i 23. . AL», _AM2Zc A U JC JiMaiL HR&oy? HREQfi H V 33 HREOfO •> wtj5 1 W H - » fVMUJ ~FTOT "hOTT H HA«? u* vu tu a or oc m i* W M IP M '* a et ec S k t e v tr

mcm6830

Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
Contextual Info: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories

1MBA10-090

Contextual Info: FUJI IGBT S P E C I F I C A T I O N TYPE NAME : 1MBA10-Q90 1. SCOPE This specification covers the ratings and requirements for FUJI IGBT Type 1MBA10-090. Application : for General Switching Power Supply. 2. OUT VIEW 2-1 Shape and Dimensions »•it 11 > *£

rectifier diode 6 amp 400 volt

Abstract: 340E-01 transistor 2 Amp 3 volt MJH16018 rectifier diode 20 amp 800 volt blocking diode 20 amp 1200 volt MUR30100E 200 Amp current 1000 volt diode 100 Amp current 1000 volt diode blocking diode 200 amp 1200 volt
Contextual Info: Order this data sheet by MUR30100E/D MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA TM Sw itchm ode Pow er Rectifier MUR30100E . designed for use in switching power supplies, inverters and as freewheeling diodes, these state-of-the-art devices have the following features:

Contextual Info: S c h u t z v e r m e r k nach DINB4 c (F is c h e r E l e k t r o n ik 2 0 0 0 ) F re im a s s to le ra n z O b e r f la c h e D IN 2 7 6 8 m fi/cherelektronik S 3 M a f l s t a b =1:1 D a tu m B e a r b . 30.03.00 G epr. z. Anderung Datum Name K u n d e : 7 7 7 7 7 Fischer Ele ktron ik

MPD424260

Abstract: 424260-70 nec japan
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD42S4260, 424260 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S4260,424260 are 262,144 words by 16 bits dynamic CMOS RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.

tj 8p8c

Contextual Info: MODULAR TELEPHONE JACKS ADAM TECH ADAM TECHNOLOGIES INC. M TJ SERIES INTRODUCTION: Adam Tech MTJ Series Modular Telephone Jacks are designed for direct m ating to PC boards in thru-hole or surface mount applications. Together with our MTP Series Modular Plugs they

Contextual Info: ADVANCED ANALOG A Division of intech ADC5200 SERIES DESCRIPTION HIGH SPEED 12-BIT A /D CONVERTERS T he A D C 5200 Series devices are successive approxim ation 12-bit A /D converters with 13/nsec or 50 Jtsec conversion tim e. These devices are laser trim m ed for ultra accu racy and reliability and

Contextual Info: 10 13 4 D IG IT NOTESi D A T E CODE S E E NOTE 5 • M A TERIA L- YW7TW7rur7rur7i IN SULATOR - LC P , UL 9 4 V -0 , COLOR BLACK CONTACTS - PHOSPHOR BRONZE S E E SHT. 5 & 6 FOR CHART DIMENSIONS AND EDP NO.'S ' p a n RECOMMENDED MATING PIN LENGTH: LOWER ROW - .2 0 0 1 MIN., .2 8 5 1 MAX.

NCT Group

Contextual Info: Surface Acoustic Wave Resonator Filter SF085ZB-001 TOKO No. 1. Dimensions Part No. 1.8 max < > Unit: mm Input: 9 Output: 4 Ground: 1,2,3 5,6,7 8,10 Tolerance: ± 0.2 2. Electrical characteristics Parameter Unit 2.1 Center frequency Fo MHz 2.2 Passband width (at 3dB)

sanyo capacitor se green

Abstract: TO068 LC7512 lc7510
Contextual Info: SANYO SEMICONDUCTOR CORP 32E D 7 cì cì 7G7L j DD0 ÖQ3 7 □ T-77-21 C M O S 1C 3 007A S93B Automatic Music Selector up to 3 Selections for Tape Recorders T he L C 7510/7512 are single-chip ICs designed to au tom atically se lec t your desired m usic up to 3 selection s

AD918

Abstract: TC514256 TC514266 TC514256A
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC514266AP/AJ/AZ-70, TC514266AP/AJ/AZ-80 TC514266AP/AJ/AZ-10 DESCRIPTION The TC514266AP/AJ/AZ is the new generation dynamic RAM organized 262,144 words by 4 bit. The TC514266AP/AJ/AZ utilizes TOSHIBArs CMOS Silicon gate process technology as

1h39

Abstract: itt 2222 SN74ABT3614
Contextual Info: SN74ABT3614 64 x 36 x 2 CLOCKED FIRST-IN, FIRST-OUT MEMORY WITH BUS MATCHING AND BYTE SWAPPING SC B S1 2 6 C -JU N E 1992- R E V IS E D JANUARY 1994 Free-Running CLKA and CLKB Can Be Asynchronous or Coincident TWo Independent 64 x 36 Clocked FIFOs Buffering Data In Opposite Directions

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD4 2 S 1 8 1 6 0 L , 4 2 1 8 1 6 0 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE The ,uPD42S18160L, 4218160L are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The fast page mode and