7748B Search Results

2SJ212

Abstract: T500 t500 06 60 05
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ212 P-CHANNEL MOS FET FOR S W IT C H IN G The 2SJ212, P-channel vertical type MOS FET, is a switching device

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRAN SISTO R 2SJ212 P-CHANNEL MOS FET FOR SW ITCHING The 2SJ212, P-channel vertical type MOS F E T, is a s w itch ing device PACKAGE DIMENSIONS {Unit : mm w h ic h can be driven d ire c tiy b y the o u tp u t o f ICs having a 5 V pow er

T500 I2 60 05 AT

Abstract: 2SJ212 T500 7748b IEI-1209
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ212 P-CHANNEL MOS FET FOR S W IT C H IN G The 2SJ212, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. As the MOS FET has low on-state resistance and excellent switching