76A DIODE Search Results

Contextual Info: R6076ENZ1 Nch 600V 76A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.042W ID 76A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

Contextual Info: R6076ENZ1 Nch 600V 76A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.042W ID 76A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

IXTA76P10T

Abstract: ixth76p10t 76P10T DIODE 76A IXTP76P10T
Contextual Info: Preliminary Technical Information TrenchPTM Power MOSFET IXTA76P10T IXTP76P10T IXTH76P10T P-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = ≤ RDS on - 100V - 76A Ω 24mΩ TO-263 (IXTA) G S (TAB) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings

Contextual Info: AP99T06AGI-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D BVDSS RDS ON Low On-resistance Fast Switching Characteristic ID G RoHS Compliant & Halogen-Free 60V 4.2m 76A S Description

Contextual Info: AP90T06GP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D RDS ON Lower On-resistance Fast Switching Characteristic ID G RoHS Compliant & Halogen-Free 68V 9.5m 76A S Description

FCH76N60

Contextual Info: SupreMOS TM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based

76N15T2

Contextual Info: Advance Technical Information TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 IXFA76N15T2 IXFP76N15T2 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier = 150V = 76A Ω ≤ 20mΩ TO-263 AA (IXFA) G S Symbol Test Conditions Maximum Ratings

76N15T2

Abstract: IXFP76N15T2 IXFA76N15T2 15-2A
Contextual Info: Advance Technical Information IXFA76N15T2 IXFP76N15T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier = 150V = 76A Ω ≤ 20mΩ TO-263 AA (IXFA) G S Symbol Test Conditions Maximum Ratings

IXFP76N15T2

Abstract: IXFA76N15T2
Contextual Info: Preliminary Technical Information IXFA76N15T2 IXFP76N15T2 IXFH76N15T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 = 150V = 76A   20m RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier TO-263 AA (IXFA) G S D (Tab) TO-220AB (IXFP)

DIODE 76A

Abstract: APT30M36JLL ISOTOP
Contextual Info: APT30M36JLL 300V POWER MOS 7 R 76A 0.036Ω MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

IXTH76P10T

Abstract: IXTA76P10T VDSS -60 RDS 0,50 ID 1,8 A IXTP76P10T
Contextual Info: IXTA76P10T IXTP76P10T IXTH76P10T TrenchPTM Power MOSFET VDSS ID25 = = ≤ RDS on P-Channel Enhancement Mode Avalanche Rated - 100V - 76A Ω 25mΩ TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: SupreMOS TM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based

Contextual Info: IXTA76P10T IXTP76P10T IXTH76P10T TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = ≤ RDS on D - 100V - 76A Ω 25mΩ TO-263 AA (IXTA) G G S S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

S3215

Contextual Info: CED6056/CEU6056 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 76A , RDS ON = 6.2mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package.

diode 304

Abstract: 11200-1 B2VR 72 RG
Contextual Info: APT30M40B2VR APT30M40LVR 300V 76A 0.040W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT30M40LVFR 300V POWER MOS V 76A 0.040Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

FCA76N60N

Abstract: FCA76N60 613 MOSFET
Contextual Info: SupreMOSTM FCA76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description • RDS on = 28mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling • Ultra Low Gate Charge ( Typ. Qg = 218nC)

Contextual Info: APT30M40B2VR APT30M40LVR 300V 76A 0.040W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

FCH76N60N

Abstract: FCH76N60 N-Channel mosfet 600v ir
Contextual Info: SupreMOSTM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description • RDS on = 28mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based

APT30M36JFLL

Contextual Info: APT30M36JFLL 300V R POWER MOS 7 0.036Ω 76A FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT30M40B2VFR

Abstract: APT30M40LVFR
Contextual Info: APT30M40B2VFR APT30M40LVFR 0.040Ω Ω 300V 76A POWER MOS V FREDFET B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT30M36JLL 76A 0.036Ω 300V R POWER MOS 7 MOSFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT30M36JLL 76A 0.036Ω 300V POWER MOS 7 R MOSFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT30M36JLL 76A 0.036W 300V POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses