76413DK8 Search Results

76413DK8

Abstract: MARKING 59E HUFA76413DK8 HUFA76413DK8T
Contextual Info: 76413DK8 N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy

HUFA76413DK8T

Contextual Info: 76413DK8T N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy

Contextual Info: 76413DK8T N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy

Contextual Info: 76413DK8T_F085 N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy

76413DK8

Contextual Info: 76413DK8T_F085 N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy

76413DK8

Abstract: HUFA76413DK8T
Contextual Info: 76413DK8T N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy

3kv 27k

Abstract: schematic diagram lcd monitor advance 17 27k 3kv 32 inch LCD TV SCHEMATIC efd2124 circuit diagram tv monitor lcd advance capacitor 27k 3kv capacitor c1 220uF 3kv fuse lcd inverter board schematic
Contextual Info: FAN7313 LCD Backlight Inverter Drive IC Features Description „ High-Efficiency Single-Stage Power Conversion FAN7313 provides all the control functions for a series parallel resonant converter as well as a pulse width modulation PWM controller to develop a supply voltage.

Contextual Info: 76413DK8T_F085 N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy