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    Fairchild Semiconductor Corporation HUF76121D3ST

    Trans MOSFET N-CH Si 30V 20A 3-Pin(2+Tab) DPAK T/R
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    Bristol Electronics HUF76121D3ST 1,069
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    Rochester Electronics HUF76121D3ST 76,888 1
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    Fairchild Semiconductor Corporation HUF76121D3S

    20A, 30V, 0.023 OHM, N-Channel, LOGIC LEVEL ULTRAFET POWER MOSFET
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    Rochester Electronics HUF76121D3S 2,192 1
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    Carling Technologies CB3-X0-06-976-121-D

    Circuit Breakers
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    Carling Technologies BB2-X0-06-876-121-D

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    Carling Technologies CB3-X0-07-776-121-D

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    76121D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    76121d

    Abstract: TA76121 transistor 76121D AN7254 AN9321 AN9322 HUF76121D3 HUF76121D3S HUF76121D3ST TB334
    Contextual Info: 76121D3, 76121D3S Data Sheet 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		huf76121d3huf76121d3s76121dta76121+6transistor 76121dan7254an9321an9322huf76121d3sttb334 PDF

    76121D

    Contextual Info: 76121D3, 76121D3S Data Sheet 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		huf76121d3huf76121d3s76121d PDF

    76121D

    Abstract: AN9321 AN9322 HUF76121D3 HUF76121D3S HUF76121D3ST TB334
    Contextual Info: 76121D3, 76121D3S Semiconductor Data Sheet 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		huf76121d3huf76121d3so-252aa330mm+6eia-48176121dan9321an9322huf76121d3sttb334 PDF

    76121D

    Abstract: HUF76121D3 power Diode 20A/30v transistor 76121D AN7254 AN9321 AN9322 HUF76121D3S HUF76121D3ST TB334
    Contextual Info: 76121D3, 76121D3S Data Sheet 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		huf76121d3huf76121d3s76121dpower diode 20a/30v+6transistor 76121dan7254an9321an9322huf76121d3sttb334 PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-intersilms-012aamo-153aarf1k49090+16rf1k49093rf1k49092itf87056dqtitf87072dk8titf87008dqtrf1k4922365e9 transistortransistor 75307dtransistor 65e8sd mosfet drive datasheet 4468 8 ping40n60rhr15120 equivalent10n120bnd76107dtransistor 76121demerson three phase dc motor driver service note PDF

    76121D

    Abstract: F76121D3S
    Contextual Info: interrii 76121D3, 76121D3S D a ta S h e e t 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		huf76121d3huf76121d3san726076121d+1f76121d3s PDF

    76121D

    Abstract: AN9321 AN9322 HUF76121D3 HUF76121D3S HUF76121D3ST TB334
    Contextual Info: 76121D3, 76121D3S Data Sheet 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		huf76121d3huf76121d3s76121dan9321+3an9322huf76121d3sttb334 PDF