75W NPN Search Results

Contextual Info: SEMICONDUCTOR TECHNICAL DATA TIP35C TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES • Recommended for 75W Audio Frequency Amplifier Output Stage. • Complementary to TIP36C. • Icmax:25A. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC

TIP35C

Abstract: TIP36C
Contextual Info: SEMICONDUCTOR TECHNICAL DATA TIP35C TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES • Recommended for 75W Audio Frequency Amplifier Output Stage. • Complementary to TIP36C. • Icmax:25A. MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT

75W NPN AUDIO

Abstract: TIP35C TIP36C transistor high power
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA TIP35C TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES • Recommended for 75W Audio Frequency Amplifier Output Stage. • Complementary to TIP36C. • Icmax:25A. DIM A B C D

transistor j6

Abstract: J122 transistor J6 transistor transistor j122 j48 transistor transistor 1015 J122 J122 npn PH2731-75L PACIFIC 1015
Contextual Info: an = AMP wmDanv 5 = Radar Pulsed Power Transistor, 75W, 300~s Pulse, 10% Duty PI-f2731 -75L 2.7 - 3.1 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometry Diffused Emitter Ballasting Resistors

PH3134-75S

Contextual Info: an AM P company Radar Pulsed Power Transistor, 75W, 1jxs Pulse, 10% Duty 3.1 • 3.4 GHz PH3134-75S Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

MJE3055T

Contextual Info: SILICON P LASTIC POWER TRANSISTOR NPN MJE3055T 10A 75W Technical Data …designed for general-purpose switching and amplifier application. F F F F DC Current Gain - h FE = 20 – 100 @ IC = 4Adc Collector-Emitter Saturation Voltage – VCE sat = 1.1 Vdc (Max) @ IC = 4Adc

TIP35C

Abstract: TIP36C tip35
Contextual Info: SEMICONDUCTOR TIP35C TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. Q B K F A I FEATURES E Recommended for 75W Audio Frequency C Amplifier Output Stage. J H Complementary to TIP36C. G Icmax:25A. L D d MAXIMUM RATING Ta=25

TIP35C

Abstract: TIP36C TIP35C TI
Contextual Info: SEMICONDUCTOR TIP35C TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q K I F FEATURES B E ᴌRecommended for 75W Audio Frequency C Amplifier Output Stage. J H ᴌComplementary to TIP36C. G ᴌIcmax:25A. L D d MAXIMUM RATING Ta=25ᴱ

Contextual Info: PH1090-75L Avionics Pulsed Power Transistor 75W, 1030-1090 MHz, 250µs Pulse, 10% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

TIP35CA

Contextual Info: SEMICONDUCTOR TIP35CA TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 75W Audio Frequency H I Complementary to TIP36CA. R C J Amplifier Output Stage. G Icmax:25A. D L E MAXIMUM RATING Ta=25

Contextual Info: SEMICONDUCTOR TIP35CA TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 75W Audio Frequency H I Complementary to TIP36CA. R C J Amplifier Output Stage. G Icmax:25A. D L E MAXIMUM RATING Ta=25

1030 mhz

Abstract: PH1090-75L
Contextual Info: PH1090-75L Avionics Pulsed Power Transistor 75W, 1030-1090 MHz, 250µs Pulse, 10% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

J122 transistor

Abstract: RF NPN POWER TRANSISTOR 3 GHZ PH2731-75L transistor j122
Contextual Info: PH2731-75L Radar Pulsed Power Transistor 75W, 2.7-3.1 GHz, 300µs Pulse, 10% Duty M/A-COM Products Released, 10 Aug 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

PH3134-75S

Abstract: 75W transistor
Contextual Info: PH3134-75S Radar Pulsed Power Transistor 75W, 3.1-3.4 GHz, 1µs Pulse, 10% Duty M/A-COM Products Released, 10 Aug 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

3055t

Abstract: MJE2955T MJE305 MJE3055T 75W PNP
Contextual Info: MJE2955T, 3055T Complementary Power Transistors Complementary Silicon Power Transistors are designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation-PD = 75W at TC = 25°C. • DC current gain hFE = 20 Minimum at IC = 4.0A.

HF75-12

Abstract: transistors MRF454 MRF454 SD1405
Contextual Info: HF75-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF75-12 is Designed for 12.5 Volt Class AB & C HF Power Amplifier Applications in the 2 to 32 MHz Band. FEATURES INCLUDE: • Replacement for MRF454 & SD1405 • PG = 13 dB Min. @ 30MHz & 75W • Withstands 20:1 Load VSWR

TRANSISTOR BV 32

Abstract: transistors MRF454 HF75-12 MRF454 SD1405
Contextual Info: HF75-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF75-12 is Designed for 12.5 Volt Class AB & C HF Power Amplifier Applications in the 2 to 32 MHz Band. FEATURES INCLUDE: • Replacement for MRF454 & SD1405 • PG = 18 dB Typical @ 30MHz & 75W • Withstands 20:1 Load VSWR

SMD TRANSISTOR R59

Abstract: 1N4148 equivalent SMD
Contextual Info: IRAUDAMP19 75W/4 x 2 Channel Class D Audio Power Amplifier Using the IR4301 By Jun Honda, Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP19 Demo board; • Always wear safety glasses whenever operating Demo Board

FT324

Abstract: FT424 75W HI FI AMPLIFIER 75W NPN AUDIO FT317 tl 464 SOA 2N5401 matching transformer P A speaker 2N5830 1AAA1
Contextual Info: APPLICATIO N NOTE 336 • LINEAR 5flE D bSDllS4 007Tb33 ATI INSC 2 75W Hl FI AUDIO AMPLIFIER WITH LOW TRANSIENT INTERMODULATION DISTORTION Hans Palouda Until very recently, the trend in hi-fi audio am p lifie rs has been tow ards lo w er harm on ic and in te rm od ula tion disto rtion num bers.

NTE352

Abstract: w65 transistor RF POWER TRANSISTOR NPN
Contextual Info: NTE352 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial FM equipment

2N6364

Abstract: UHF TRANSISTOR 100-400MHz
Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2N6364 Silicon NPN power UHF transistor 2N6364 is designed for use in the 100400Mhz frequency range for wideband power amplifier applications aircraft and ship electronics, etc. in severe load mismatch conditions. Output Power:

common base amplifier

Contextual Info: GAE GREAT AMERICAN ELECTROINCS MSC1075M/M RP0912-75 Silicon NPN pulse power transistor MSC1075M/MRP0912-75 is designed for Class B and C common base amplifier applications in short pulse transmitters or radio location stations, telemetry and DME systems. Output Power:

2N6364

Abstract: 75W NPN 100-400MHz 2N636
Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2N6364 Silicon NPN power UHF transistor 2N6364 is designed for use in the 100400Mhz frequency range for wideband power amplifier applications aircraft and ship electronics, etc. in severe load mismatch conditions. Output Power:

transistor 68W

Abstract: 68w transistor 68W npn onsemi marking R12 diode marking r14 ONSEMI NCS6415 NCS6415DWG NCS6415DWR2G TEA6415C TEA6415
Contextual Info: NCS6415 Bus−Controlled Video Matrix Switch Description The main function of the NCS6415 is to switch 8 video input sources to the 6 outputs. Each output can be switched to only one of the inputs, whereas any single input may be connected to several outputs.