75GD12 Search Results

f422

Contextual Info: SKM 75GD123D L3 Q RS TI9 * /2; .+824=';2 ; 23'F'25 Absolute Maximum Ratings Symbol Conditions IGBT >IU& LV Q RS TI DI LV Q NSX TI DI[$ NRXX > YS P L30;2 Q ZX TI SX P NXX P ] RX > LV Q NRS TI NX a; L30;2 Q RS TI YS P L30;2 Q ZX TI SX P NXX P SSX P NXX P E cX bbbd NSX

Contextual Info: SKM 75GD123D Absolute Maximum Ratings Symbol Conditions IGBT *6 %* %*; <6 -> -   SEMITRANSTM 3 Trench IGBT Modules SKM 75GD123DL SKM 75GD123D SKM 75GDL123D Features                       

Contextual Info: SKM 75GD123D Absolute Maximum Ratings Symbol Conditions IGBT *6 %* %*; <6 -> -   SEMITRANSTM 3 Trench IGBT Modules SKM 75GD123DL SKM 75GD123D SKM 75GDL123D Features                       

SKM75GD123D

Contextual Info: SKM 75GD123D - 2 34 5*     ' Absolute Maximum Ratings Symbol Conditions IGBT *6 -7 2 34 5* %* -7 2 /49 5* %*< /399  :4 1 - 2 ;9 5* 49 1 /99 1 > 39  -7 2 /34 5* /9 B - 2 34 5* :4 1 - 2 ;9 5* 49 1 /99 1 449 1 /99 1 & D9 CCCE /49

Contextual Info: SKM 75GD123D - 2 34 5*     ' Absolute Maximum Ratings Symbol Conditions IGBT *6 -7 2 34 5* %* -7 2 /49 5* %*< /399  :4 1 - 2 ;9 5* 49 1 /99 1 > 39  -7 2 /34 5* /9 B - 2 34 5* :4 1 - 2 ;9 5* 49 1 /99 1 449 1 /99 1 & D9 CCCE /49

Contextual Info: SKM 75GD123D - 2 34 5*     ' Absolute Maximum Ratings Symbol Conditions IGBT *6 -7 2 34 5* %* -7 2 /49 5* %*< /399  :4 1 - 2 ;9 5* 49 1 /99 1 > 39  -7 2 /34 5* /9 B - 2 34 5* :4 1 - 2 ;9 5* 49 1 /99 1 449 1 /99 1 & D9 CCCE /49

Contextual Info: SKM 75GD123D Absolute Maximum Ratings Symbol Conditions IGBT *6 %* %*; <6 -> -   SEMITRANSTM 3 Trench IGBT Modules SKM 75GD123DL SKM 75GD123D SKM 75GDL123D Features                       

Contextual Info: SKM 75GD123D Absolute Maximum Ratings Symbol Conditions IGBT *6 %* %*; <6 -> -   SEMITRANSTM 3 Trench IGBT Modules SKM 75GD123DL SKM 75GD123D SKM 75GDL123D Features                       

SKM75GD123D

Contextual Info: SKM 75GD123D - 2 34 5*     ' Absolute Maximum Ratings Symbol Conditions IGBT *6 -7 2 34 5* %* -7 2 /49 5* %*< /399  :4 1 - 2 ;9 5* 49 1 /99 1 > 39  -7 2 /34 5* /9 B - 2 34 5* :4 1 - 2 ;9 5* 49 1 /99 1 449 1 /99 1 & D9 CCCE /49

75GD120DN2

Abstract: SIGC121T120R2C
Contextual Info: Preliminary SIGC121T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2C 1200V

SKM 75 Gb 124 IGBT

Abstract: 75GD12 XLS-10 ICT80
Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/75 °C Tcase = 25/75 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 100 / 75

Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/60 °C Tcase = 25/60 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 90 / 75

D75GA

Abstract: semibox SKM 75 GAL 123 IGBT Semitrans M SKD 100 GAL semikron SKD 75 gal SKD75GAL
Contextual Info: sem ik r d n Absolute Maximum Ratings Symbol V cES R g e = 20 k ii V cG R lc Tease ” 25/80 O Tease = 25/80 °C; tp = 1 ms I CM V ges Ptot per IGBT/D1/D8, T „ » = 2 5 °C Tj, Tag Vjsol humidity climate AC, 1 min. DIN 40 040 DIN IEC 68T.1 Diodes 91 If

Semitrans M SKD 100 GAL

Abstract: SKM 75 GAL 123 IGBT skd 75 ic 747 Semitrans M SKD igbt sixpack semikron skd 100 SKM75GD123D b6u 500 semikron semikron SKD 75 gal
Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes 9) IF IFM= – ICM IFSM I2t Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT/D1/D8, Tcase=25 °C AC, 1 min. DIN 40 040

75GD120DN2

Abstract: SIGC121T120R2C
Contextual Info: SIGC121T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2C 1200V

75GD120DN2

Abstract: SIGC121T120R2C
Contextual Info: Preliminary SIGC121T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2C 1200V

skm 200 gb 122 d

Abstract: semikron skkt 132/ 14/ E Semitrans M SKD 100 GAL 124d Semikron SKR 26 /12 semikron skkh 161 semikron skkt 162/ 12/ D semipack skkt 161 sknh 210 semikron skt 240 SKKL131
Contextual Info: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,

SKM 75 GAL 123 IGBT

Abstract: semikron SKD 75 gal Semitrans M SKD 100 GAL B6U 380 Semitrans M SKD brake chopper b6u 500 semikron semikron skd 75 semikron skd skd75
Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes 9) IF IFM= – ICM IFSM I2t Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT/D1/D8, Tcase=25 °C AC, 1 min. DIN 40 040

75GD124D

Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/60 °C Tcase = 25/60 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 90 / 75

IEC 974-1

Abstract: SKM 400GB062D 195GB124DN 200gb 400GB062D 200GB123D 2119 SKM400GB123D 300GB174D 145GB123D
Contextual Info: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,

FZ1600R12KF4

Abstract: IGBT FZ 800 75GD120DN2 100GB170DN2 IGBT FZ 1200r16kf4 igbt driver BSM10GD60DLC FZ800R12KL4C igbt 1600V 20A eupec igbt BSM 100 gb
Contextual Info: power . Home Products IGBT 600V the News 1200V Contact Job Offers Company Search Site Content 1600V/1700V 2500V/3300V Sixpack Power Integrated Modules In Editorials future Low Loss. Half-Bridge Packages 50A BSM 50GB60DLC 75A BSM 75GB60DLC 100A BSM 100GB60DLC

Semitrans M SKD 100 GAL

Abstract: b6u 500 semikron SKD100 GAL 16 v 8 D DIP SKM 75 GAL 123 IGBT
Contextual Info: s e MIKRO n Absolute Maximum Ratings Symbol VcES VcGR lc ICM V ges Ptot Tj, Tag Visol humidity climate Diodes 9) If IfM= - ICM Ifsm l2t Values Conditions ' Units Rge = 20 kQ Tease = 25/80 °C Tease = 25/80 °C; tp = 1 ms per IGBT/D1/D8, Tcase=25 °C AC, 1 min.

SKM100GB101D

Abstract: SKM200GB122D SKM40GD121D SKM200GB102D SKM400GA122D SKM400GA102D SKM75GB121D SKM40GD101D 40GD101D SKM150GB122D
Contextual Info: s e m ik r d n SEMITRANS IGBT Modules 1000 to 1700 V Cross Reference List Previous to Actual Types 1 Case width) Sixpacks SEMITRANS 6 (45 mm) DUALS SEMITRANS 2 (34 mm) SK-BOOK ’90 / SUPPL. 91 1989-1991 SKM 15GD100D SK-BOOK ’92/'93 1992-1995 SKM 22GD101D

75GD120DN2

Abstract: BSM75GD120DN2
Contextual Info: SIGC121T120R2C IGBT Chip in NPT-technology Features: • 1200V NPT technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling  integrated gate resistor Chip Type VCE SIGC121T120R2C 1200V This chip is used for: