75DFI Search Results

Contextual Info: HYUNDAI H Y 5 3 10 0 0 A SEMICONDUCTOR 1M X S e rie s 1-bit CMOS DRAM DESCRIPTION The HY531000A is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: HY6264A-I Series •HYUNDAI 8K X 8-bit CMOS SRAM DESCRIPTION The HY6264A-I is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

HY512264

Abstract: HY512264jc
Contextual Info: “H YU N D A I H Y 5 1 2 2 6 4 S e r ie s 128Kx 16-bit CMOS DRAM with 2CAS, Extended Data Out PRELIMINARY DESCRIPTION The HY512264 is the new generation and fast dynamic RAM organized 131,072 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access

Contextual Info: •HYUNDAI SEMICONDUCTOR H Y 5116410 S e rie s 4M X 4-blt CMOS DRAM with Write-Per-Bit DESCRIPTION The HY5116410 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit with function of Write-Per-Bit. The HY5116410 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced