75652 Search Results

54ACT374

Abstract: 5wk4
Contextual Info: REVISIONS LTR A APPROVED DATE YR-MO-DA DESCRIPTION Add device types 02. Technical changes to 1.3, 1.4, and table I. Change to figures 1, 2, and 3 Add vendor CAGE 01295. Editorial changes throughout, Remove Jan replacement part number M38510/75652BRX and 21.

IQ411

Abstract: lm550 54ACT374
Contextual Info: REVISIONS LTR DESCRIPTION A Add device types 02. Technical changes to 1.3, 1.4, and table I. Change to figures 1, 2, and 3 Add vendor CAGE 01295. Editorial changes throughout, Remove Jan replacement part number M38510/75652BRX and DATE YR-MO-DA 1989 JUN 05

Contextual Info: WAGO-I/O-SYSTEM 756 Sensor/actuator cables, both ends of the cable are fitted with plug/socket M8 Socket M8 Plug <_ 34,8 _> > Ø10 < > M8 < Ø 10,2 >_< M8 >_ _< 33 <_> 17,5 <_> <_19,3_> Pin 1 - 4: 0.34 mm² 3 M8/M8 Sensor/actuator cables, both ends of the cable are fitted with plug/socket

Contextual Info: 9 WAGO-I/O-SYSTEM 756 Sensor/actuator cables, both ends of the cable are fitted with plug/socket M8 Socket 531 M8 Plug L* 34,7 Pin 1 - 4: 0.25 mm² ø 9,6 ø 9,6 41,3 3-pole socket mm) 3-pole plug 1 brown (+) 3 blue (-) 4 black (S) M8/M8 Sensor/actuator cables, both ends of the cable are fitted with plug/socket

75652G

Abstract: AN7254 AN7260 AN9321 AN9322 HUF75652G3 TB334
Contextual Info: 75652G3 Data Sheet October 1999 File Number 4746.1 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE DRAIN TAB 75652G3 Features • Ultra Low On-Resistance - rDS(ON) = 0.008Ω, VGS = 10V • Simulation Models

75652G

Contextual Info: 75652G3 TM Data Sheet November 2000 File Number 4964 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE DRAIN TAB 75652G3 Features • Ultra Low On-Resistance - rDS(ON) = 0.008Ω, VGS = 10V • Simulation Models

75652G

Abstract: 75652 AN7254 AN7260 AN9321 AN9322 HUF75652G3 TB334 HUF75652G
Contextual Info: 75652G3 Data Sheet December 2001 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE DRAIN TAB 75652G3 Features • Ultra Low On-Resistance - rDS(ON) = 0.008Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

ELIS-1024

Abstract: ELIS-1024-LG photon imaging sensors PDS0004
Contextual Info: Photon Vision Systems High Performance Linear Image Sensors ELIS-1024 IMAGER The Photon Vision Systems ELIS is a high performance linear image sensor designed to replace CCD’s in a wide variety of applications, including: 1 Technology Place Homer, NY 13077

75652G

Abstract: AN7254 AN7260 AN9321 AN9322 HUF75652 HUF75652G3 TB334
Contextual Info: 75652G3 Data Sheet October 1999 File Number 4746.1 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.008Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER

75652G

Abstract: HUFA75652G3 AN7254 AN9321 AN9322 TB334 75652
Contextual Info: 75652G3 Data Sheet November 2000 File Number 4964 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE DRAIN TAB 75652G3 Features • Ultra Low On-Resistance - rDS(ON) = 0.008Ω, VGS = 10V • Simulation Models

75652G

Contextual Info: 75652G3 in t e g r i I Data Sheet O cto be r 1999 4746.1 Ultra, 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET Packaging File N um ber Features JEDEC TO-247 • Ultra Low On-Resistance ' rDS ON = 0.008S2, VG S = 10V • Simulation Models - Temperature Compensated P SP IC E and S A B E R *

75652

Abstract: 75652G AN7254 AN9321 AN9322 HUFA75652G3 TB334
Contextual Info: 75652G3 Data Sheet December 2001 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE DRAIN TAB 75652G3 Features • Ultra Low On-Resistance - rDS(ON) = 0.008Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER

Contextual Info: 75652G3 October 2013 Data Sheet N-Channel UltraFET Power MOSFET 100 V, 75 A, 8 mΩ Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.008Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER