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    Harris Semiconductor HUF75309P

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    Bristol Electronics HUF75309P 100
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    Harris Semiconductor HUF75309P3

    Trans MOSFET N-CH Si 55V 19A 3-Pin(3+Tab) TO-220AB Rail
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    Bristol Electronics HUF75309P3 20
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    Rochester Electronics HUF75309P3 375 1
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    Fairchild Semiconductor Corporation HUF75309P3

    MOSFET N-Channel 55V 19A (Tc) TO-220-3 Tube
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    Rochester Electronics HUF75309P3 8,687 1
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    75309P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    75309P

    Abstract: TA75309
    Contextual Info: 75309P3, HUF75309D3, HUF75309D3S HARRIS S E M I C O N D U C T O R 17A, 55V, 0.070 Ohm, N-Channel, UltraFET Power MOSFETs February 1998 MM Features • 17A, 55V • Ultra Low On-Resistance, ros ON = 0-070i2 • Diode Exhibits Both High Speed and Soft Recovery


    OCR Scan     		huf75309p3huf75309d3huf75309d3s0-070i2+4tb334huf7530975309pta75309 PDF

    75309P

    Abstract: HUFA75309D3 HUFA75309D3S HUFA75309D3ST HUFA75309P3 TB334 TO-252 N-channel power MOSFET
    Contextual Info: 75309P3, HUFA75309D3, HUFA75309D3S Data Sheet December 2001 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		hufa75309p3hufa75309d3hufa75309d3s75309p+3hufa75309d3sttb334to-252 n-channel power mosfet PDF

    TL 431 model SPICE

    Abstract: Simulation Model tl 431
    Contextual Info: 75309P3, HUF75309D3, HUF75309D3S Semiconductor June 1999 Data Sheet 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		huf75309p3huf75309d3huf75309d3shuf75309+2tl 431 model spicesimulation model tl 431 PDF

    75309P

    Abstract: HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334
    Contextual Info: 75309P3, HUF75309D3, HUF75309D3S Data Sheet December 2001 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		huf75309p3huf75309d3huf75309d3s75309p+2huf75309d3sttb334 PDF

    75309

    Contextual Info: 75309P3, HUFA75309D3, HUFA75309D3S TM Data Sheet November 2000 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		hufa75309p3hufa75309d3hufa75309d3s75309 PDF

    75309P

    Contextual Info: 75309P3, HUF75309D3, HUF75309D3S integri! D a ta S h e e t Ju n e 1999 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power M O S F E Ts are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		huf75309p3huf75309d3huf75309d3spor19a+3an7254an726075309p PDF

    75309P

    Abstract: 75309d AN9321 HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334 317E-10 431E-6
    Contextual Info: 75309P3, HUF75309D3, HUF75309D3S Data Sheet June 1999 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		huf75309p3huf75309d3huf75309d3s43oducts+775309p75309dan9321huf75309d3sttb334317e-10431e-6 PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-intersilms-012aamo-153aarf1k49090+16rf1k49093rf1k49092itf87056dqtitf87072dk8titf87008dqtrf1k4922365e9 transistortransistor 75307dtransistor 65e8sd mosfet drive datasheet 4468 8 ping40n60rhr15120 equivalent10n120bnd76107dtransistor 76121demerson three phase dc motor driver service note PDF

    75309P

    Abstract: HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334
    Contextual Info: 75309P3, HUF75309D3, HUF75309D3S S E M I C O N D U C T O R 17A, 55V, 0.070 Ohm, N-Channel, UltraFET Power MOSFETs February 1998 Features Description • 17A, 55V • Ultra Low On-Resistance, rDS ON = 0.070Ω • Diode Exhibits Both High Speed and Soft Recovery


    Original     		huf75309p3huf75309d3huf75309d3stb334+4huf753091-800-4-harris75309phuf75309d3st PDF

    Diode LT n5

    Contextual Info: 75309P3, HUF75309D3, HUF75309D3S S em iconductor Data Sheet June 1999 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. " This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		huf75309p3huf75309d3huf75309d3shuf75309+1diode lt n5 PDF

    75309P

    Abstract: HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334
    Contextual Info: 75309P3, HUF75309D3, HUF75309D3S Data Sheet June 1999 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		huf75309p3huf75309d3huf75309d3s75309p+2huf75309d3sttb334 PDF

    75309p

    Abstract: HUFA75309D3 HUFA75309D3S HUFA75309D3ST HUFA75309P3 TB334
    Contextual Info: 75309P3, HUFA75309D3, HUFA75309D3S Data Sheet November 2000 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs Title UFA 309P These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		hufa75309p3hufa75309d3hufa75309d3s75309p+2hufa75309d3sttb334 PDF

    75309P

    Abstract: AN9321 HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3
    Contextual Info: 75309P3, HUF75309D3, HUF75309D3S S E M I C O N D U C T O R 17A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 17A, 55V The HUF75309 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced


    Original     		huf75309p3huf75309d3huf75309d3shuf75309+41-800-4-harris75309pan9321huf75309d3st PDF