75245 Search Results

IR 30 D1

Contextual Info: SN74ALS236 64 x 4 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY SDAS107A-OCTOBER 1986 - REVISED SEPTEMBER 1993 Asynchronous Operation Organized as 64 Words by 4 Bits DW OR N PACKAGE TOP VIEW r NC [ 1 Data Rates From 0 to 30 MHz 3-State Outputs 16 J VCC 15 ] S O

Contextual Info: Pulse Transformers Page 1 of 2 Pulse Transformers SURFACE MOUNT PICO surface mount units utilize materials and methods to withstand extreme temperatures of vapor phase, I.R., and other reflow procedures without degradation of electrical or mechanical characteristics.

PHP50N06T

Abstract: A80L
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance

BUK9524-55

Abstract: BUK959
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device

ic lm 7500

Contextual Info: PICO’s Pulse Transformers SIZE 1 LEAKAGE MD. 31 \*S£»*~* 1:1:1 150 600 75015 1:1:1 1:1:1 .10 0 .400 1300 .900 75020 1:1:1 2400 4.2 75025 7 503 0 1:1:1 2:1:1 3700 150 1.6 3 .0 2:1:1 600 .250 1.0 .450 7 503 5 7 504 0 2:1:1 13 0 0 7 504 5 75050 2:1:1 2:1:1

RISC-Processor s3c2410

Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Contextual Info: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH

Contextual Info: Data Sheet 2002, Issue 6, 02/14/11, Page 1 FILLED SOLID CABLE RDUP RUS PE- 39 Pairs/ Gauge 6/19 12/19 18/19 25/19 50/19 75/19 100/19 6/22 12/22 18/22 25/22 50/22 75/22 100/22 150/22 200/22 300/22 400/22 6/24 12/24 25/24 50/24 75/24 100/24 150/24 200/24 300/24

Contextual Info: Telecommunications Cables This catalog contains indepth information on the most comprehensive line of Telecommunications cables for the distribution of telecommunication signals for outside use. The product and technical sections have been developed with an easy-to-use “specon-a-page” format. It features

Contextual Info: SN54HC240, SN74HC240 OCTAL BUFFERS AND LINE DRIVERS WITH 3-STATE OUTPUTS SCLS128A-DECEMBER 1982 - REVISED JANUARY 1996 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers High-Current Outputs Drive up to 15 LSTTL Loads SN54HC240 . . . J OR W PACKAGE

BUK9624-55

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology

PICO Electronics

Contextual Info: Pulse Transformers Page 1 of 3 Pulse Transformers SURFACE MOUNT PICO surface mount units utilize materials and methods to withstand extreme temperatures of vapor phase, I.R., and other reflow procedures without degradation of electrical or mechanical characteristics.

Contextual Info: DC/DC Converters Single-Inline Pac kage 0.75 W att FEATURES: •M iniature Single-Inline Package SIP •H igh Efficiency •500 Vdc Input/O utput Isolation (1000 Vdc O ptional) •Single & Dual O utput •Low Cost 4 3 k POLYTRON SPECIFICATIONS: INPUT: Input Voltage Range

PHB50N06LT

Abstract: MS1015
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology

pico electronics transformers

Abstract: 75565 MIL-PRF-21038 75595 75590
Contextual Info: Pulse Transformers SURFACE MOUNT PICO surface mount units utilize materials and methods to withstand extreme temperatures of vapor phase, I.R., and other reflow procedures without degradation of electrical or mechanical characteristics. Specifications z z

Contextual Info: PICO’S Pulse Transformers SIZE 1 • Units manufactured to Mll-T21036 7P7SXNNNNK2 • DIELECTRIC STR EN G TH :. All Units Tested at 500 V R M S • OPERATING TEMPERATURE: -5 5 'c to +130'c . • INSULATION RESISTANCE Greater Than 10,000 Megohms at 700 V OC.

PHB50N06LT

Abstract: PHD50N06LT PHP50N06LT
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP50N06LT, PHB50N06LT, PHD50N06LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance

SN74LVT245

Abstract: A819 75245
Contextual Info: SN74LVT245 OCTAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS FEBRUARY 1992 PACKAGE PINOUT TOP V E W Supports Mixed-Mode Signal Operation; 5 V Input and Output Voltages With 3.3 V Vcc Supports Unregulated Battery Operation Down to 2.7 V DIR [ 1 A 1[ 2 A 2[ 3 A3 [ 4

SN54LVT240

Contextual Info: SN54LVT240, SN74LVT240 3.3-V ABT OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS I SCBS134F - SEPTEMBER 1992 - REVISED JULY 1995 State-of-the-Art Advanced BICMOS Technology ABT Design for 3.3-V Operation and Low-Static Power Dissipation Support Mixed-Mode Signal Operation (5-V

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance

Contextual Info: Pulse Transformers Page 1 of 2 Pulse Transformers SURFACE MOUNT PICO surface mount units utilize materials and methods to withstand extreme temperatures of vapor phase, I.R., and other reflow procedures without degradation of electrical or mechanical characteristics.

BUK7524-55

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance

SN74F191

Abstract: CTRDIV16 F3002 SN54F191A SN74F191A SDFS059
Contextual Info: SDFS059 SN54F191A, SN74F191A SYCH RO N O U S 4-BIT UP/DOWN BINARY CO U N TERS WITH R E S E T AND R IP P LE C LO C K _ SCF3002 - DXXXX. JANUARY 1991 High Speed fMAX of 125 MHz Typical SN54F191A . . . J PACKAGE SN74F101A . . . D OR N PACKAGE

JRC 45600

Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Contextual Info: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES