74LS03 FUNCTION TABLE Search Results

Contextual Info: MITSUBISHI HIGH SPEED CMOS M74HC03P QUADRUPLE 2-INPUT POSITIVE NAND GATE WITH OPEN-DRAIN OUTPUTS DESCRIPTION The M74HC03 is a semiconductor integrated circuit con­ sisting of four 2-in^ut positive-logic NAND usable as negative-logic NOR gates, with open-drain outputs.

M74HC03P

Abstract: 74LS03 function table 4000B 74LS03 M74HC03 74LS03 pin configuration
Contextual Info: M ITSUBISHI HIGH S P E E D C M O S M 74H C 03P Q U A D R U P L E 2 -IN P U T P O S IT IV E N A N D G A TE W IT H O P E N -D R A IN O U T P U T S DESCRIPTION The M 74H C03 is a semiconductor integrated circuit con­ PIN CONFIGURATION TOP VIEW sisting of four 2-inh''jt positive-logic N AN D usable as nega­

Contextual Info: TOSHIBA TC74HC03AP/AF/AFN Quad 2-Input NAND Gate Open Drain The TC74HC03A is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.

Contextual Info: TC74HC03AP/AF/AFN Q U A D 2 - I N P U T N A N D G A T E OPEN D R A I N The TC74HC03A is a high speed CMOS 2-IN PU T NAND GATE fabricated with silicon gate C 2 MOS technology. It achieves the high speed operation sim ilar to equivalent LSTTL while m aintaining the CMOS low power

Contextual Info: TOSHIBA C2M0S Logic TC74HC/HCT Series TC74HC03AP/AF/AFN Quad 2-Input NAND Gate Open Drain The TC74HC03A is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.

74LS03 truth table

Abstract: TC74HC03A 74LS03 DIP14-P-300-2 TC74HC03AF TC74HC03AFN TC74HC03AP Scans-00722 SOL-14
Contextual Info: TO SHIBA TC74HC03AP/AF/AFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC03AP, TC74HC03AF, TC74HC03AFN QUAD 2 -INPUT NAND GATE OPEN DRAIN The TC74HC03A is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology.

Contextual Info: M54HC03 M74HC03 T S G S -T H O M S O N QUAD 2-INPUT OPEN DRAIN NAND GATE • LOW POWER DISSIPATION lCC = 1 /*A MAX. at Ta = 25°C .-" \ ■ HIGH NOISE IMMUNITY V nih = V nil = 28% Vcc (MIN.) ■ OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS ■ SYMMETRICAL OUTPUT IMPEDANCE

74HC03

Abstract: 74LS03 function table
Contextual Info: rz 7 s g s -th o m s o n ms4 hco 3 A 7# M 74H C 03 QUAD 2-INPUT OPEN DRAIN NAND GATE HIGHSPEED tpz = 5 ns TYP. AT Vcc = 5 V LOW POWER DISSIPATION Ice = 1 nA (MAX.) AT Ta = 25 ‘C HIGH NOISE IMMUNITY Vnih = Vnil = 28 % Vcc (MIN.) OUTPUT DRIVE CAPABILITY

GD74HCT03

Abstract: GD74HC03
Contextual Info: GD54/74HC03, GD54/74HCT03 QUAD 2-INPUT NAND GATES WITH OPEN-DRAIN OUTPUTS General Description Pin Configuration These devices are identical in pinout to the 54/74LS03. They contain four independent 2-Input NAND gates. The open-drain outputs require pullup resistors to perform correctly. With suitable pullup resistors, these devices can be used in activelow wired-OR or active-high wired-AND applica­

Contextual Info: r z 7 SCS-THOMSON M54HC03 M74HC03 È QUAD 2-INPUT OPEN DRAIN NAND GATE HIGH SPEED tpz = 5 ns TYP. AT Vcc = 5 V LOW POWER DISSIPATION Icc = 1 nA (MAX.) AT Ta = 25 “C HIGH NOISE IMMUNITY V nih = V nil = 28 % Vcc (MIN.) OUTPUT DRIVE CAPABILITY 1 0 LSTTLLOADS

74LS03

Abstract: M54HC03 M54HC03F1R M74HC03 M74HC03B1R M74HC03C1R M74HC03M1R 74HC03
Contextual Info: M54HC03 M74HC03 QUAD 2-INPUT OPEN DRAIN NAND GATE . . . . . . . HIGH SPEED tPZ = 5 ns TYP. AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS BALANCED PROPAGATION DELAYS

74LS03

Abstract: DIP14-P-300-2 TC74HC03A TC74HC03AF TC74HC03AFN TC74HC03AP
Contextual Info: TO SHIBA TC74HC03AP/AF/AFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC03AP, TC74HC03AF, TC74HC03AFN QUAD 2 -INPUT NAND GATE OPEN DRAIN The TC74HC03A is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology.

74LS03

Abstract: DIP14-P-300-2 TC74HC03A TC74HC03AF TC74HC03AFN TC74HC03AP
Contextual Info: TO SH IBA TC74HC03AP/AF/AFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC03AP, TC74HC03AF, TC74HC03AFN Note The JEDEC SOP (FN) is not available in Japan QUAD 2 -IN PU T NAND GATE (OPEN DRAIN) The TC74HC03A is a high speed CMOS 2-INPUT NAND

74hc03

Abstract: 54HC 74HC M54HC03 M74HC03 74LS03 74HC03 equivalent
Contextual Info: SGS -THOMSON M 54HC03 M 74HC03 QUAD 2-INPUT OPEN DRAIN NAND GATE • LOW POWER DISSIPATION Ice = 1 /¿A MAX. a t TA = 25°C ■ HIGH NOISE IMMUNITY Vnih = V n il = 2 0/,° ^cc (MIN.) ■ OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS ■ SYMMETRICAL OUTPUT IMPEDANCE

74HC03

Contextual Info: M54HC03 M74HC03 Æ T SGS-THOMSON HO ®IILIl g¥K(Q Ri]D©i QUAD 2-INPUT OPEN DRAIN NAND GATE • LOW POWER DISSIPATION Ice = 1 (MAX.) at TA = 25° C ■ HIGH NOISE IMMUNITY VNIH = VN|L = 28% VCC (MIN.) ■ OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS ■ SYMMETRICAL OUTPUT IMPEDANCE

Contextual Info: SbE D £ = 7 S G S - • T 7^237 H O M S O 0G3R73Ö öfil ■ S G T H M 54H C 03 M 74H C 03 N ^ T # . llO E IILIi(gìlsì®liìilO(gi S 6 S-THOnSON T -l? -? -! QUAD 2-INPUT OPEN DRAIN NAND GATE ■ LOW POWER DISSIPATION Ice = 1 I t A (MAX. at TA = 25°C

Contextual Info: TC74HC03AP/AF/AFN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC03AP,TC74HC03AF,TC74HC03AFN Quad 2-Input NAND Gate open drain The TC74HC03A is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent

vrvz

Abstract: HCOOA 74LS03 truth table
Contextual Info: y TC74HC03AP/AF/AFN Q U A D 2 - I N P U T N A N D GATE OPEN D R A I N T he TC74HC03A is a high speed CMOS 2 -IN P U T N A N D G A T E fa b ric ate d w ith silicon g ate C 2 MOS technology. It achieves the high speed o peration s im ila r to eq u iv alen t LSTTL w hile m ain tain in g the CMOS low pow er

Contextual Info: TC74HC03AP/AF/AFN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC03AP,TC74HC03AF,TC74HC03AFN Quad 2-Input NAND Gate open drain The TC74HC03A is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent

Contextual Info: TC74HC03AP/AF/AFN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC03AP,TC74HC03AF,TC74HC03AFN Quad 2-Input NAND Gate open drain The TC74HC03A is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent

Contextual Info: TC74HC03AFN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC03AFN Quad 2-Input NAND Gate open drain The TC74HC03A is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent

74LS03

Abstract: DIP14-P-300-2 TC74HC03A TC74HC03AF TC74HC03AFN TC74HC03AP
Contextual Info: TC74HC03AP/AF/AFN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC03AP,TC74HC03AF,TC74HC03AFN Quad 2-Input NAND Gate open drain The TC74HC03A is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent

74LS03 pin configuration

Contextual Info: TC74HC03AP/AF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC03AP,TC74HC03AF Quad 2-Input NAND Gate open drain The TC74HC03A is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent

Contextual Info: TC74HC03AP/AF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC03AP, TC74HC03AF Quad 2-Input NAND Gate open drain The TC74HC03A is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent