747B Search Results

Contextual Info: FC N -704770577077744*/745*“*-au/* FCN-747*-au/* FCN-747B/-747J*-AU/* MINI IDC SOCKET DIMENSIONS Clip Type Bump Type Cable Assembly < - 6 0.2 3 6 ^ - » 10.5 0.4 13) _i Unit: mm (in.) PART NUMBERS D im ensions D esigna te 0 (ze ro ) fo r th ro ug h en d o r B fo r clo sed en d in th e n

Contextual Info: 747BL Linear ICs Dual General Purpose Op Amp status Military/High-RelN Input Bias Current Max. A 1.5u Unity Gain BW (Hz) V(io) Max. (V)6.0m I(io) Max. (A)500n Com Mode Inp Range (VICR)24 Input Resistance Typ. (Ohms)300k Temp Coef. of VIO P(D) Max. (W)85m

ADE-208-747B

Abstract: 2SK3151 2SK3151-E PRSS0004ZE-A SC-65
Contextual Info: 2SK3151 Silicon N Channel MOS FET High Speed Power Switching REJ03G1076-0400 Previous: ADE-208-747B Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 11.5 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

Nippon capacitors

Contextual Info: HB56AW472E-5/6/7 32 MB Buffered FP DRAM DIMM 4-Mword X 72-bit, 4 k Refresh, 1-Bank Module 18 pcs of 4 M X 4 Components HITACHI ADE-203-747B (Z) Rev. 2.0 Nov. 1997 Description The H B56A W 472E belongs to 8 B yte DIMM (Dual In-line M em ory M odule) family, and has been

Hitachi DSA0076

Abstract: 2SK3151 DC30100
Contextual Info: 2SK3151 Silicon N Channel MOS FET High Speed Power Switching ADE-208-747B Z 3rd. Edition Mar. 2001 Features • Low on-resistance R DS (on) = 11.5mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–3P D 2

Contextual Info: FCN-7047705770777447745*‘*-Aur FCN-747*-au/* FCN-747B/-747J*-AU/* MINI IDC SOCKET DIMENSIONS Clip Type Bump Type A -B -2.54 0 .100 2.54 (0 . 100) 6 (0 .236) S3 W6 (0 .236) Cable Assembly - 6 (0 .236) \ -»

IEC 60061-1

Abstract: 60061.1 12w 66 036w
Contextual Info: PRODUCT DATA SHEET Type Size Description Part No. Incandescent T4 T-1¼ SubMiniature Bi-Pin Lamp (see table) Drawing not to scale All dimensions in mm PHOTOMETRY DATA Farnell Part No. 329174 329186 3167914 329198 653550 SLI P/N 7309 747BP 7646 1091BP 7632

Contextual Info: 747BN Linear ICs Dual General Purpose Op Amp status Military/High-RelN Input Bias Current Max. A 500n Unity Gain BW (Hz)14k V(io) Max. (V)6.0m I(io) Max. (A)200n Com Mode Inp Range (VICR)30 Input Resistance Typ. (Ohms)300k Temp Coef. of VIO15u P(D) Max. (W)170m

Contextual Info: 747BE Linear ICs Dual General Purpose Op Amp status Military/High-RelN Input Bias Current Max. A 1.5u Unity Gain BW (Hz) V(io) Max. (V)6.0m I(io) Max. (A)500n Com Mode Inp Range (VICR)24 Input Resistance Typ. (Ohms)300k Temp Coef. of VIO P(D) Max. (W)85m

S1208CBI

Abstract: GR-253 concatenated and OC-3 and STM-1 motorola 747
Contextual Info: EVROS ADVANCE Product Brief Part Number S1208CBI, August 2002 STS-12/STM-4 to DS3/E3/DS1/E1/J1/VT/TU SONET/SDH Mapper EVROS implements the highest density, standards compliant channelization of 622Mbps SONET/SDH an STS-12/STM-4 or quad STS-4/STM1 optical connections following SONET/SDH (STS-1 to VT/TU) or PDH (DS3/E3 to DS1/E1/J1) . It supports industry standard SONET/SDH to

Contextual Info: MP87L76 CM OS 10 MSPS, 8-Bit High Speed, Low Power Analog-to-Digital Converter with Power Down FEATURES • • • • • • • • • • • • • 20 Pin PDIP, SOIC and SSOP Packages • 24 Pin Package Available: MP87L86 • Improved Version of MP87L75

TB 1226 BN

Abstract: 531 T70 n03 0AS001 B05AD 2U 34
Contextual Info: in y Intel 450NX PCIset 82454NX PCI Expander Bridge PXB 82453NX Data Path Multiplexor (MUX) 82452NX RAS/CAS Generator (RCG) 82451 NX Memory & I/O Controller (MIOC) Revision 1.3 March 1999 Intel Corporation 1998,1999 Information in this document is provided in connection with Intel products. No license, express or

Contextual Info: , UNPLBL ISHED R E V IS E D REV PER REV PER R EV 1 5 E D REV PER OBSOLETE 0B5 - 2 , - 3 REV PER NYLON OR BRASS PER CARBON FLAME RETARDANT, UL 94V-0 RATED, GLASS FIL LE D , PER BRASS; P LA T IN G P LA T IN G ASTM A109. BOARDLOCKS: PER PER 5 . O0|im[. 0 0 0 2 0 0 ]

Contextual Info: 1SMA4736~1SMA4757 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE 6.8 to 51 Volts POWER 1 Watts FEATURES 0.114 2.90 0.098(2.50) • For surface mounted applications in order to optimize board space • Built-in strain relief 0.062(1.60) 0.047(1.20) • Glass passivated junction

Contextual Info: DATA SHEET 1SMA4741~1SMA4754 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE 11 to 39 Volts POWER 1.0 Watts SMA/DO-214AC Unit: inch mm FEATURES • For surface mounted applications in order to optimize board space. .114(2.90) .098(2.50) • Low profile package

pan 21

Contextual Info: 1SMA4736~1SMA4757 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE 6.8 to 51 Volts POWER 1.0 Watts FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief .047 1.20 • Glass passivated junction

Contextual Info: Surface Mount Zener Diodes 1.0 W Device Marking Code Nominal Zen. Vltg. @ IZT Test Current VZT V 6.8 7.5 8.2 9.1 10.0 11.0 12.0 13.0 15.0 16.0 18.0 20.0 22.0 24.0 27.0 30.0 33.0 36.0 39.0 43.0 47.0 51.0 56.0 62.0 68.0 75.0 82.0 91.0 100.0 Part No. SMAJ4736A

bd 9777

Abstract: a/IC bd 9777
Contextual Info: 123456 1789AB2CDE7B37FDE8B4D7AEB578B69D8 A123B4B BA123B4B 7B69D8 !"#$%4B 989B3&778 #7' B( 4D9A !E8D9AB B1A8DF9*78 BA123B4B 7B69D8 !"#$%4 C77777BD246A4E5 62+$,  / 7

748b DIODE

Abstract: zener diode green BAND 761-B 743B 743b diode
Contextual Info: SENSITRON SEMICONDUCTOR 1SMA4741-G–1SMA4764-G 1.0W SURFACE MOUNT ZENER DIODE Green Products Data Sheet 5208, Rev. Features
 Glass Passivated Die Construction 1.0W Power Dissipation 11 –100V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance

Contextual Info: 1SMA4736~1SMA4757 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE 6.8 to 51 Volts POWER 1.0 Watts FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief .047 1.20 • Glass passivated junction

Contextual Info: 1SMA4736~1SMA4757 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE 6.8 to 51 Volts POWER 1.0 Watts FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief .047 1.20 • Glass passivated junction

Drawing MU23

Contextual Info: PRAVIMS HADE IN THIRD AW3LE PROJECTION HIS DRAUIH3 13 UNPUBLISHED. I RELE ftEVtSIÛNS R EV PER ECN BD 4 9 5 0 _ R E V IS E D P E R ECN B D 5 4 7 7 _ R EV PER ECN BD 6 5 5 9 _ REV PER EC 0020-1336-94 * ADDED - S P E R EC 0 0 2 0 - 6 7 6 - 9 5

1SMA4733

Abstract: Zener diode smd marking code 749B
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SURFACE MOUNT SILICON ZENER DIODE 1SMA4732 - 1SMA4760 4V7 - 68V DO-214AC (SMA) Surface Mount Package ABSOLUTE MAXIMUM RATINGS DESCRIPTION Power Dissipation @ Ta=50ºC

8111L

Abstract: VCH 673bp 2102BS 3150-203 VCH International T-15 7220L 281wt 673bp 715l
Contextual Info: I AMD nñTA i# n a n T -V A Sub-Miniature Volts Amps Lumens MSCP Life hours Filament shape 5 0.115 1.9 0.15 40.000 C-2R 6 0.055 1.0 0.08 10.000 C-2R 6 0.20 7.5 0.60 1,000 6.5 0.15 4.0 U.ú¿ ft nr» n 12 0.06 1.9 12 0.083 14 0.037 14 0.04 14 T-VA T-VA T-VA