745 DIODE Search Results

745-0008

Contextual Info: ^ j - DIALIGHT CORP isti H 3-7 12E D | 5fll2b?E GQD3âbfl T | Numeric Display w ith integral TTL M S I Circuit Chip character height: .270” D 745-000 8 solid state LED The display and T T L MSI chip are mounted on a substrate and the assembly is then cast w ithin a nonconductive transparent epoxy.

Contextual Info: 2 0 0 A Avg. 315 R M S Up to 1 2 0 0 Volts 10-50 fjs Fast Switchinq SCR T 6 2 7 _2 0 Symbol 0D 4>D, <t>d 2 H 0J J, L N Inches Millimeters Min. Max. 1.610 .745 1.420 1.650 .755 1.460 40.89 18.92 36.07 41.91 19.18 37.08 .500 .135 .072 .560 .145 082 12.70

GE-MOV

Abstract: varistor 82z2 Varistor RU 22z1 VARISTOR 56z2 VARISTOR 39Z1 gemov 18Z1 capacitor 47z1 33Z1
Contextual Info: ZA SERIES R EPLA C EM EN T FO R the following when used as transient suppressor: • Selenium Tryectors • Zener Diodes • Silicon Carbide • Gas Discharge Tubes • R-C Networks non-dv/dt • Neon Bulbs • Electronic Crowbar Circuits APPLICATIONS •

Contextual Info: BAS17 LOW VOLTAGE STABISTOR Silicon planar epitaxial diode in SOT-23 envelope. This diode is intended fo r lew voltage stabilizing e.g. bias stabilizer in class-B ou tput stages, clipping, clamping and meter protection. Q UICK REFERENCE D ATA Repetitive peak forward current

S1RB

Abstract: Philips MARKING CODE a91
Contextual Info: D bbS3T31 □□Eb2DE TTT H A P X BAS17 N AMER PHIL IPS/DISCRETE_ J V LOW VOLTAGE STABISTOR Silicon planar epitaxial diode in SOT-23 envelope. This diode is intended fo r low voltage stabilizing e.g. bias stabilizer in class-B ou tput stages, clipping, clamping and meter protection.

TNR9G471K

Abstract: TNR G Series TNR23G471K tnr15g621 TNR15G241K
Contextual Info: MARCON AMERICA CORP ESE D • 5763311 0000713 6 ■ METAL OXIDE VARISTORS T '-ll-JL S- TNR Marcon TN R Metal Oxide Varistors are voltage dependent, symmetrical resistors which perform in a manner similar to back-to-back zener diodes in circuit protective functions and

mt relay

Abstract: schrack mt 78 755 SCHRACK MULTIMODE RELAY MT Schrack mt 740 relay MTMF0W00 11 pin relay Socket F0203-B relays schrack diode 745
Contextual Info: SCHRACK General Purpose Relays Accessories Multimode Relay MT n Snap-on mounting on DIN-rail n Screw mounting n Pozidrive screws with rising clamp terminals n Logical layout of input-/output connections n White marking area n Din-rail sockets and accessories: RoHS compliant Directive

SD-50 diode

Abstract: SD500N-R SW-45 C745
Contextual Info: Previous Datasheet Index Next Data Sheet Bulletin I2095/A SD500N/R SERIES Stud Version STANDARD RECOVERY DIODES Features 475A Wide current range High voltage ratings up to 4500V High surge current capabilities Stud cathode and stud anode version Standard JEDEC types

3771

Abstract: thyristor 406 A 3198 T1059N T1589N T2159N T308N T458N T709N
Contextual Info: W1C - Schaltung ~ Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 2200 V ~ Kühlblöcke für Wasserkühlung Wasser men. vL pro KB Temp. tA Satzstrom Id Verlustl. P d Schaltung Diode D Thyristor T [°C] [A]

Contextual Info: SB1520S . SB1540S Type Axial Lead Diode Schottky barrier rectifier diodes Forward Current: 15 A Reverse Voltage: 20 to 40 V SB1520S . SB1540S Repetitive peak reverse voltage Surge peak reverse voltage Max. reverse recovery time Max. forward voltage Max.

TC4011BP equivalent

Contextual Info: 1. Test Results A. Life Test Results Table 1 shows the life test results of B Series C2M0S IC. B Series is classified into SSI Family less than 100 transistors and MSI Family (More than transistSfs). Table 1 B Series CJM0S (SSI Family) TYPE TEST ITEMS CONDITION

Contextual Info: KSC5603D KSC5603D High Voltage High Speed Power Switch Application • • • • Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Internal schematic diagram C 2 (1) B 1 E (3)

philips e3

Abstract: BP317 BU506 BU506D BU508D
Contextual Info: DISCRETE SEMICONDUCTORS Philips Semiconductors Product specification Silicon diffused power transistors BU506; BU506D DESCRIPTION High-voltage, high-speed, switching NPN power transistor in a TO-220AB package. The BU506D has an integrated efficiency diode.

TRANSISTOR buy 416

Abstract: vces-1600
Contextual Info: KSC5603D KSC5603D High Voltage High Speed Power Switch Application • • • • Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Equivalent Circuit C B TO-220 1 1.Base E 2.Collector

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB10 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB10 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD

1PS59SB20

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age M3D114 1PS59SB20 Schottky barrier diode Product specification 1998 Jul 28 Philips Semiconductors Product specification Schottky barrier diode 1PS59SB20 FEATURES DESCRIPTION • Ultra fast switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection

BAP64-02

Abstract: BP317 MGL857
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP64-02 Silicon PIN diode Preliminary specification Supersedes data of 1999 Jun 16 1999 Sep 21 Philips Semiconductors Preliminary specification Silicon PIN diode BAP64-02 FEATURES PINNING • High voltage, current controlled

Contextual Info: APTM50HM75SCTG Full bridge Series & SiC parallel diodes MOSFET Power Module VBUS CR3A CR3B Q3 G3 G1 OUT1 OUT2 S1 CR2A Q2 S3 CR4A CR2B CR4B Q4 G2 G4 S2 S4 0/VBUS NTC1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge

P400 Series

Abstract: D-19 P400 P401 P402 P421 P422 P431 P432
Contextual Info: P400 Series Vishay High Power Products Passivated Assembled Circuit Elements, 40 A FEATURES • Glass passivated junctions for greater reliability • Electrically isolated base plate • Available up to 1200 VRRM/VDRM • High dynamic characteristics • Wide choice of circuit configurations

Contextual Info: FJI5603D NPN Silicon Transistor Applications Equivalent Circuit • • High Voltage and High Speed Power Switch Application Electronic Ballast Application C Features • • • B Wide Safe Operating Area Small Variance in Storage Time Built-in Free Wheeling Diode

philips datasheet surface mount zener diode

Abstract: PSMA5925B PSMA5926B PSMA5927B PSMA5928B PSMA5929B PSMA5930B PSMA5945B JEDEC DO-214AC DC COMPONENTS
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D168 PSMA5925B to PSMA5945B Voltage regulator diodes Product specification 1998 Dec 04 Philips Semiconductors Product specification Voltage regulator diodes PSMA5925B to PSMA5945B FEATURES DESCRIPTION

W1032

Abstract: PSM-A10
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D168 PSMA8.5A to PSMA78A Transient voltage suppressor diodes Product specification Supersedes data of 1998 Dec 04 1999 Jan 26 Philips Semiconductors Product specification Transient voltage suppressor diodes

LP9435LT1G

Abstract: p94 marking lp9435
Contextual Info: LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS ON , Vgs@-10V, Ids@-5.3A = 70mΩ RDS(ON), Vgs@-4.5V, Ids@-4.2A = 100mΩ LP9435LT1G 3 Features 1 Advanced trench process technology 2 High Density Cell Design For Ultra Low On-Resistance

BAQ806

Abstract: diode 1407 diode 104
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 BAQ806 AM PIN diode Product specification File under Discrete Semiconductors, SC10 1998 Aug 03 Philips Semiconductors Product specification AM PIN diode BAQ806 FEATURES DESCRIPTION • Glass passivated