744 775 20 Search Results

str 5092

Abstract: 744 wurth 744 773 047 wuerth 744 773 10 744 775 20 744 775 147 WURTH 744 312
Contextual Info: more than you expect SMD-Power Chokes Design-Kit for FAIRCHILD SEMICONDUCTOR more than you expect SMD-Power Chokes Design-Kit FAN 5232/L1 744 560 15 L: 1,50 . µH RDC: 9,00 . mΩ I: 8,00 . A FAN 5236/L1 744 770 07 L: 7,60 . µH RDC: 20,00 . mΩ I: 5,90 . A

744 wurth

Abstract: mh 776 744 78 022 774 056 773115
Contextual Info: Würth Elektronik GmbH & Co. KG Verbindungstechnik Riedenstraße 16 D-74635 Kupferzell Telefon: +49 (0 79 44) 91 93-0 Telefax: (+49) (0 79 44) 91 93-51 WURTH ELEKTRONIK V e rbindungstechnik Ü IIV E A U T E EMV-Komponenten SMD - Power Chokes WE-PD2 CMS - Inductances de stockage WE-PD2

C G 774 6-1

Abstract: IC 744 744 771 20 744 770 127 wurth 744 744 771 30 regulateur de tension CONVERTISSEUR ELEVATEUR 744 770 wurth 744 032 100
Contextual Info: Würth Elektronik GmbH & Co. KG Verbindungstechnik ^ M ^ O R ie d e n s tra ß e 1 6 D -7 4 6 3 5 K u p ferzell CMS - Inductances de puissance WE-PD A Type L XL B C A B C D E 12,0 12,0 6,0 8,0 5,0 5,0 7,6 7,6 12,0 12,0 jg L ^ S lCATIONS • m axim um adm issible current for S M D -c h o k e s

19 744

Abstract: wuerth 744 773 10 744 wurth wuerth choke 744 744 510 1 744 510 68 744 510 22 744 220 rdc semiconductor wuerth choke 744 773 10
Contextual Info: more than you expect Design Kit for Switcher CAD III Inductors more than you expect SMT Power-Chokes for Switcher CAD III Inductors 744 510 1 744 511 0 744 540 4 744 561 68 744 570 27 744 773 056 744 776 10 L: RDC: I: L: 10,0 . µH RDC: 0,075 Ω . I: 1,0

intel lga 775 motherboard manual

Abstract: lga 775 motherboard manual LGA 775 Socket PIN diagram intel 775 motherboard diagram pentium m 740 mtbf intel cpu cooler advantech pentium 4 atx power supply diagram pcie X1 36 pin edge connector 52x CD-ROM
Contextual Info: ACP-2010MB/ 2000MB 2U Rackmount Chassis for ATX/ MicroATX Motherboard with Low-profile Rear Bracket Option Features NEW • LED indicators and audible alarm notification for system fault detection • Shock-resistant drive bays to hold one 5.25" and three 3.5" drives

1142.5029

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 4 3 2 RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. By REVISIONS DIST GP 00 - LTR DESCRIPTION REVISED PER DATE DWN CJV CWR I4AP R 201 ECO-11-002226 APVD D D T E R M IN A T E D SCALE VIE' 5:1 C C B B SCALE

Contextual Info: Frequency Synthesizer 50Ω KSN-800A-119+ 684 to 800 MHz The Big Deal • Low phase noise and spurious • Robust design and construction • Small size 0.80" x 0.58" x 0.15" CASE STYLE: DK1042 Product Overview The KSN-800A-119+ is a Frequency Synthesizer, designed to operate from 684 to 800 MHz

ADF4118

Contextual Info: Frequency Synthesizer 50Ω KSN-800A-119+ 684 to 800 MHz The Big Deal • Low phase noise and spurious • Robust design and construction • Small size 0.80" x 0.58" x 0.15" CASE STYLE: DK1042 Product Overview The KSN-800A-119+ is a Frequency Synthesizer, designed to operate from 684 to 800 MHz

Contextual Info: MBRH2401 50 R DACO SEMICONDUCTOR CO., LTD. THRU MBRH240200(R) SCHOTTKY DIODE MODULE TYPES 240A Features 240 Amp Rectifier 150-200 Volts High Surge Capability Types Up to 200V V rrm HALF PACK ( D -6 7 ) Maximum Ratings Operating Temperature: -55 C to +150°C

69399

Contextual Info: KSN-780A-119+ Frequency Synthesizer Typical Performance Data Power Output Vs Frequency 1.4 -45°C 1.2 +25°C Power Output dBm 1.0 +85°C 0.8 0.6 0.4 0.2 0.0 -0.2 -0.4 -0.6 730 735 740 745 750 755 760 765 770 775 780 Frequency (MHz) 2nd Harmonics Vs Frequency

Contextual Info: O DLI 8 0 4 -9 0 1 MHz Standard Hybrid Amplifier Temperature bandwidth I¿0 4 Specification limit Parameters . 804-901 M H z 1 O P^A +25 Units °c -40 to + 8 5 Frequency range MHz 8 0 4 - 901 Small signal gain dB 12.5 ± 0 . 5 Gain vs. temperature • Low noise figure

Contextual Info: MBRH2001 50 R DACO SEMICONDUCTOR CO., LTD. THRU MBRH200200(R) S C H O T T K Y DIO D E M O D U LE T Y P E S 200A Features 200 Amp Rectifier 150-200 Volts High Surge Capability Types Up to 200V V rrm HALF PACK ( D -6 7 ) Maximum Ratings Operating Temperature: -55 C to +150°C

et 1103

Abstract: Flr016xp
Contextual Info: FLR016XP, F LR 016X V GaAs F ET a n d H E M T Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25°C Item Symbol Saturated Drain Current Test Conditions ID SS - 60 90 mA - 30 - mS -1.0 -2.0 -3.5 V -4 - - V 19 20 - dBm 7.0 8.0 - dB - 25 - % 19 20 -

gearbox rev

Abstract: RPM 777 Cw 334 2SK2776-SMQ 2SA1962-OQ 2SC4935-O(Q)
Contextual Info: Single direction synchronous geared motors • ■ ■ ■ Constant speed, dependent on supply frequency Wide range of speeds Direction of rotation controlled by long-life mechanical anti-return >107 starts Permanent magnet rotor Types Applications - Programming devices

Contextual Info: DACO SEMICONDUCTOR CO., LTD. MBRH200150 R THRU MBRH200200(R) SCHOTTKY DIODE MODULE TYPES 200A Features High Surge Capability 200 Amp Rectifier 150-200 Volts Types Up to 200V VRRM Maximum Ratings HALF PACKAGE Operating Temperature: -55 C to +150 Storage Temperature: -55 C to +150

Contextual Info: DACO SEMICONDUCTOR CO., LTD. MBRH1 201 50 R THRU MBRH1 20200(R) SCHOTTKY DIODE MODULE TYPES 120A Features 120 A m p Rectifier 150-200 Volts High Surge Capability Types Up to 200V Vrrm HALF PACK ( D-67) Maximum Ratings Operating Temperature: -55 C to +150°C

Contextual Info: MBRH120150 R DACO SEMICONDUCTOR CO., LTD. THRU MBRH120200(R) SCHOTTKY DIODE MODULE TYPES 120A Features High Surge Capability 120 Amp Rectifier 150-200 Volts Types Up to 200V VRRM HALF PACKAGE Maximum Ratings G Operating Temperature: -55 C to +150 Storage Temperature: -55 C to +150

Contextual Info: DACO SEMICONDUCTOR CO., LTD. MBRH240150 R THRU MBRH240200(R) SCHOTTKY DIODE MODULE TYPES 240A Features High Surge Capability 240 Amp Rectifier 150-200 Volts Types Up to 200V VRRM Maximum Ratings HALF PACKAGE Operating Temperature: -55 C to +150 Storage Temperature: -55 C to +150

OPAMP LM311

Abstract: lm311 OP-AMP Engineered Components Company LM311 MX633 MX633DW MX643 MX643DW LM311S
Contextual Info: APPLICATION NOTE MX633/643 Noise Immunity Circuit for the MX633/643 Call Progress Detectors 1. Introduction The telephone’s central office sends call progress signals during the origination of a telephone call. Successful completion of each step of the connection process changes the call process signal. Call Progress Detectors, in

Contextual Info: DACO SEMICONDUCTOR CO., LTD. MBRH20020 R THRU MBRH200100(R) SCHOTTKY DIODE MODULE TYPES 200A Features High Surge Capability 200 Amp Rectifier 20-100 Volts Types Up to 100V VRRM Maximum Ratings HALF PACKAGE Operating Temperature: -55 C to +150 Storage Temperature: -55 C to +150

Contextual Info: DACO SEMICONDUCTOR CO., LTD. MBRH20020 R THRU MBRH2001 OO(R) SCHOTTKY DIODE MODULE TYPES 200A Features 200 A m p Rectifier 20-100 Volts High Surge Capability Types Up to 100V Vrrm HALF PACK ( D-67) Maximum Ratings Operating Temperature: -55 C to +150°C Storage Tem perature:-55 C to +150 °C

Contextual Info: DACO SEMICONDUCTOR CO., LTD. MBRH12020 R THRU MBRH120100(R) SCHOTTKY DIODE MODULE TYPES 120A Features High Surge Capability 120 Amp Rectifier 20-100 Volts Types Up to 100V VRRM Maximum Ratings HALF PACKAGE Operating Temperature: -55 C to +150 Storage Temperature: -55 C to +150

Contextual Info: FLR016XP, FLR016XV m ïm :il GaAs F E T and H E M T Chips fU J Ilb U FEATURES • High Output Power: P-|<jB = 20.0dBm Typ. • High Gain: G ^ b = 8.0dB(Typ.)(FLR016XP) G 1dB = 9.0dB(Typ.)(FLR016XV) • High PAE: = 25%(Typ.)(FLR016XP) il add = 26%(Typ.)(FLR016XV)

Flr016xp

Abstract: FLR016XV GaAs FET HEMT Chips
Contextual Info: FLR016XP, FLR016XV GaAs FET and HEMT Chips FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.)(FLR016XP) NOT Drain G1dB = 9.0dB(Typ.)(FLR016XV) • High PAE: hadd = 25%(Typ.)(FLR016XP) REC OM Source hadd = 26%(Typ.)(FLR016XV)