742 793 0 Search Results

wurth 742 792 02

Abstract: wurth* 742 700 5 wurth 742 792 04 wurth 742 792 15 742 792 113 wurth 742 793 742 792 07 wurth 742 792 622 742 792 71 "742 793 1"
Contextual Info: W ü rth E lektronik G m bH & C o. KG V e r b in d u n g s te c h n ik R iedenstraße 16 D 74635 Kupferzell Telefon: +49 (0 7 9 4 4 ) 91 9 3-0 WURTH ELEKTRONIK Telefax: (+49) (0 7 9 4 4 ) 91 93-51 à NOUVEAUTE 0402 SMD-Ferrites / Ferrites CMS BL ""E n □ >

BC 458

Abstract: ba 458 ba 3837 S08MM BA 758 BD 877 BD 4218 BC 2388
Contextual Info: MS008 .050” C EN TER , LEAD ED TYPE B i l —c — NOTE 7 *— — c2 J- 1 STANDARD *-A — CA­ DETAIL A PLANE NOTES: 7. CONFIGURATION W ITHIN INDICATED AREA OPTIONAL. 1. REFER TO APPLICABLE SYMBOL LIST. 2. DIM EN SIO N IN G AND TOLERANCING PER

Contextual Info: 0 9 - 0 Voauonn ' 8/90 - y f - n - ç r 2225-K Martin Avenue, Santa Clara, CA 95050 FAX C O M PO N EN TS (408 492-1400 (408)492-1500 10 to 1000 MHz TO-8 Cascadable Amplifiers (Typical Values) Low Noise Figure . High Gain-Two Stages .

LB 1639

Abstract: transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236
Contextual Info: SILICON TRANSISTOR UPA801T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz

AZ23C10W-13

Abstract: DZ23C12-13 TBZ363C20V8 MMBZ5222B
Contextual Info: DCS/PCN-1096 Rev 01 PRODUCT CHANGE NOTICE Contact Date: Mar 21, 2008 Implementation Date: Jun 19, 2008 Alert Category: Discrete Semiconductor Alert Type: PCN #: Alternate Dice from FA PCN #1096, REV 01 TITLE Alternate Discrete Dice from FA IMPACT None Identified.

transistor NEC D 822 P

Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters

63000-000

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device

Kathrein 739 160

Abstract: Kathrein Antennas 840 21210 Kathrein CSA AWM 1 A Kathrein gsm ANTENNA Din 41253
Contextual Info: ISO 9001 Quality and ISO 14001 Environmental Management Kathrein-Scala is an ISO 9001 and ISO 14001 certified company and is in voluntary compliance with EU Directive 2002-95-EC for Reduction of Hazardous Substances RoHS . Order Information Address: Kathrein Inc., Scala Division

KT 783

Contextual Info: NEZ4450-15D NEZ4450-15DD NEZ4450-8D NEZ4450-8DD NEZ4450-4D NEZ4450-4DD C-BAND POWER GaAs MESFET OUTPUT POWER AND EFFICIENCY FEATURES HIGH P o u t 18 W 42.5 dBm Typ PidB for NEZ4450-15D /15D D 9 W (39.5 dBm) Typ PidB for NEZ4450-8D/8DD 4.5 W (36.5 dbm) Typ PidB for NEZ4450-4D/4DD

nec 2741

Abstract: 2SC4226 datasheet 2SC4226 2SC4226-T1 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low in millimeters noise amplifier.

499G

Abstract: NEZ4450-15D NEZ4450-4D NEZ4450-4DL NEZ4450-8D
Contextual Info: NEZ4450-15D NEZ4450-15DL NEZ4450-8D NEZ4450-8DL NEZ4450-4D NEZ4450-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • • • • • ELECTRICAL CHARACTERISTICS TC PART NUMBER P1DB ηADD IDS GL IM3 -XDL Option Only IDSS VP BVDGO gm RTH (CH-C ∆T (CH-C)

transistor Bf 444

Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA

NTC0805E3103

Abstract: ntc0805e NTC0805E3473 RT2596 NTCS0805E3.....T NTC0805E3104 NTC0805E3334 NTCS0805E3T
Contextual Info: 2381 615 5./NTCS0805E3.T Vishay BCcomponents SMD 0805, Glass Protected NTC Thermistors FEATURES • TCR ranging from - 6 %/K at - 40 °C to - 2 %/K at 150 °C • Tolerance on R25 down to 1 %, and on B25/85 down to 1 % • Suitable for wave or reflow soldering

108 046f

Abstract: 03e1 046F 044f 03C24 b 0334 046b
Contextual Info:
     

      
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03E1

Abstract: 00CF ISD33000 b0334 04D5
Contextual Info:

 
      
 
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NE850R5

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device

sm 9142

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA801T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 6-PIN 2 ELEMENTS MINI MOLD The/xPA801T has built-in 2 low -voltage tran sistors w hich are designed PACKAGE DRAWINGS (U n it: m m)

Contextual Info: more than you expect R o H S c o m p lia n t CONNECTORS Expect more! We are at your service! Würth Elektronik differs in several aspects from all other component manufacturers: We deliver all catalogue products ex stock and our technical sales force can support your designs with market experience.

Contextual Info: RTD Temperature vs. Resistance Table For European Curve, Alpha = .00385, ITS-90 °C Ohms -200 199 198 197 196 195 194 193 192 191 190 189 188 187 186 185 184 183 182 181 180 179 178 177 176 175 174 173 172 171 170 169 168 167 166 165 164 163 162 161 160 159

333HT

Abstract: 0.01 smd 0805 vishay NTCS0805E3683 K 3570 NTCS0805E3T
Contextual Info: NTCS0805E3.T/2381 615 5. Vishay BCcomponents SMD 0805, Glass Protected NTC Thermistors FEATURES • TCR ranging from - 6 %/K at - 40 °C to - 2 %/K at 150 °C • Tolerance on R25 down to 1 %, and on B25/85 down to 1 % • Suitable for wave or reflow soldering

NTCS0805E3103

Abstract: NTCS0805E3474 NTCS0805E3222 E148885 NTCS0805E3 xt 684 NTCS0805E3334 NTCS0805E3T
Contextual Info: NTCS0805E3.T Vishay BCcomponents SMD 0805, Glass Protected NTC Thermistors FEATURES QUICK REFERENCE DATA PARAMETER • TCR ranging from - 6 %/K at - 40 °C to - 2 %/K at 150 °C • Tolerance on R25 down to 1 %, and on B25/85 down to 1 % • Suitable for wave or reflow soldering

NTCS0805E3T

Contextual Info: NTCS0805E3.T www.vishay.com Vishay BCcomponents SMD 0805, Glass Protected NTC Thermistors FEATURES QUICK REFERENCE DATA PARAMETER VALUE UNIT 2.2K to 680K  ± 1; ± 2; ± 3; ± 5 % 3430 to 4125 K ± 1; ± 3 % Maximum dissipation at 25 °C 210 mW Thermal time constant 

NTCS0805E3103

Abstract: NTCS0805E3222 62768 NTCS0805E3683 NTCS0805E3473 NTCS0805E3472 1 928 403 095 680.74 57588 ntcs0805e
Contextual Info: NTCS0805E3.T www.vishay.com Vishay BCcomponents SMD 0805, Glass Protected NTC Thermistors FEATURES QUICK REFERENCE DATA PARAMETER VALUE UNIT 2.2K to 680K  ± 1; ± 2; ± 3; ± 5 % 3430 to 4125 K ± 1; ± 3 % Maximum dissipation at 25 °C 210 mW Thermal time constant 

NTCS0805E3104

Abstract: RT 232 1048 NTC Thermistor smd 22k NTCS0805E3222 NTCS0805E3T
Contextual Info: NTCS0805E3.T Vishay BCcomponents SMD 0805, Glass Protected NTC Thermistors FEATURES QUICK REFERENCE DATA PARAMETER • TCR ranging from - 6 %/K at - 40 °C to - 2 %/K at 150 °C • Tolerance on R25 down to 1 %, and on B25/85 down to 1 % • Suitable for wave or reflow soldering