726 POWER TRANSISTOR Search Results

pwm lm358 mosfet

Abstract: LM324 TO 220 Package High current N CHANNEL MOSFET 200 Amp n channel mosfet circuit diagram of OP amp based circuits
Contextual Info: P W R - N C H 4 0 1 -r-w -s i» 4-Channel MOSFET Array 400 V - 335 mA per channel POWER INTEGRATIONS INC 37E D • POWER INTEGRATIONS, INC. 726^25^ GOQOOTS 5 * P I N Product Highlights 150 V 4 open-drain N-channel MOSFETs per package • 200, 300, and 400 V versions

PMB4220

Abstract: pmb4420 PMB 4420 Siemens pmb 4420 transistor smd marking gk 5-PIN MARKING PAX PMB4819 smd diode marking KC L50Q 4819
Contextual Info: tM I fl s ?l s s if 3 No. SI IC PMB4819 CODE NO. ^ 7| fl- S s| g Siemens LTD. Seoul 726,Yeoksam-dong,Kangnam-gu Seoul.C.P.O Box 3001,Korea Tel: 5277-700 Fax: 5277-779 SIEMENS ICs for Communications Power Amplifier for DECT Application PMB 4819 Version 1.0

TIP42A equivalent

Abstract: TIP42 texas TIP42 ST TIP42A TEXAS Schematic/TIP42
Contextual Info: TË TEXAS INSTR -COPTO} •89ei 726 flTblTSb DD3bûlb 4 ~] I k X Â S 'T N S T ïT O P T O > 62C 3 6 8 1 6 TIP42, TIP42A, TIP42B, TIP42C, TIP42D, TIP42E, TIP42F P-N-P SILICON POWER TRANSISTORS REVISED OCTOBER 1 9 8 4 T * 3 3 ~ 2- / Designed for Complimentary Use With TIP41 Series

v726

Abstract: 25c2625
Contextual Info: Preliminary Product Description SPA-2318 Stanford Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

Contextual Info: Preliminary Product Description SPA-1118 Stanford Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

Contextual Info: Preliminary Product Description SPA-2118 Stanford Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

ECB-101161

Contextual Info: Preliminary Product Description SPA-1218 Stanford Microdevices’ SPA-1218 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

SPA-2118

Abstract: TRANSISTOR 726 transistor a 726 ECB-101161
Contextual Info: Preliminary Product Description SPA-2118 Stanford Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

Xa3 TRANSISTOR

Abstract: matsuo
Contextual Info: Preliminary Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

TRANSISTOR 726

Abstract: SPA-1118
Contextual Info: Preliminary Product Description SPA-1118 Stanford Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

TL726

Abstract: SPA-2318 transistor a 726 RF TRANSISTOR 10 WATT 3825C SPA23
Contextual Info: Preliminary Product Description SPA-2318 Stanford Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

marking A45

Abstract: germanium transistor ac 128 SGA-4563 marking A45 RF TRANSISTOR 726
Contextual Info: Preliminary Preliminary Product Description SGA-4563 Stanford Microdevices’ SGA-4563 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.4V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

SGA-7489

Abstract: TRANSISTOR 726 7489 DC-3000 MCH185A101JK a74 sot-89 EDS-101801 EDS 10180
Contextual Info: Preliminary Product Description Stanford Microdevices’ SGA-7489 is a high performance cascadeable 50-ohm amplifier designed for operation at 5 Volts DC. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with FT up to 50 GHz.

SPA-1318

Contextual Info: Preliminary Product Description SPA-1318 Stanford Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

SGA-4286

Contextual Info: Product Description Stanford Microdevices’ SGA-4286 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current

SGA-8343

Contextual Info: Preliminary Preliminary Product Description Stanford Microdevices’ SGA-8343 is a high performance SiGe HBT amplifier designed for operation from DC to 6 GHz. This RF device uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process. The SGA-8343 is optimized

transistor marking A21

Abstract: SGA-2163
Contextual Info: Product Description Stanford Microdevices’ SGA-2163 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases

TRANSISTOR A64

Abstract: RF TRANSISTOR 1.5 GHZ A64 MMIC A64 marking SGA-6486 A64 marking amplifier marking A64 amplifier
Contextual Info: Product Description Stanford Microdevices’ SGA-6486 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases

A6331

Contextual Info: Product Description Stanford Microdevices’ SGA-6389 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases

TRANSISTOR MARKING A41

Abstract: SGA-4186 34a41
Contextual Info: Product Description Stanford Microdevices’ SGA-4186 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current

4463 B

Abstract: TRANSISTOR A44 "Bipolar Transistor" A44 A44 marking amplifier SGA-4463 pin configuration transistor A44 ZL 15 a
Contextual Info: Product Description Stanford Microdevices’ SGA-4463 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases

TRANSISTOR A63

Abstract: 5894 A63 marking amplifier DC-3000 SGA-6386
Contextual Info: Product Description Stanford Microdevices’ SGA-6386 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases

TRANSISTOR A63

Abstract: EDS-100620 SGA-6389 a63 TRANSISTOR
Contextual Info: Product Description Stanford Microdevices’ SGA-6389 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases

TRANSISTOR a43

Abstract: SGA-4386
Contextual Info: Product Description Stanford Microdevices’ SGA-4386 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current