72174 Search Results

NJU6855

Contextual Info: NJU6855 TENTATIVE 160COMMON x 128RGB LCD DRIVER FOR 65,536-COLOR STN DISPLAY GENERAL DESCRIPTION PACKAGE The NJU6855 is a 160COMMONx128RGB LCD driver for 65,536-color STN display. It contains common drivers, RGB drivers, a serial and a parallel MPU interface circuit, an internal LCD power supply,

Si4971DY

Abstract: Si4971DY-T1
Contextual Info: Si4971DY New Product Vishay Siliconix Dual P-Channel 25-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.026 @ VGS = - 10 V - 7.2 0.033 @ VGS = - 6 V - 6.4 D TrenchFETr Power MOSFET D 25-V VGS Provides Extra Head Room for Safe Operation

gal 16v8 programming algorithm

Abstract: gal programming algorithm GAL programming Guide GAL16V8QS TAT 2159 opal 16V8A 16V8Q 16V8QS gal programming specification
Contextual Info: Semiconductor GAL16V8QS-10L, -15L 20-Pin 0.8jli EEC M O S PLD s General Description Features Th e EECM OS G AL16V8Q S devices are fabricated using N ational’s CS80BEV 0.8|u. E lectrically Erasable C M O S pro­ cess. This advanced process m akes N ational’s

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

GAL20V8QS-15LNC

Abstract: IC 2576 5.0v gal20v8qs GAL programming Guide manufacturers electrical diagram to a low voltage security diagram GAL programming opal
Contextual Info: National Semiconductor GAL20V8QS-10L, -15L 24-Pin 0.8ju EECMOS PLDs General Description Features T h e EECM OS G A L20V8Q S devices are fabricated using N atio n a l’s C S80BEV 0.8/x E lectrically E rasable CM O S pro­ cess. This advanced p rocess m akes

Si4971DY

Abstract: Si4971DY-T1 Si4971DY-T1-E3
Contextual Info: Si4971DY Vishay Siliconix New Product Dual P-Channel 25-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.026 at VGS = - 10 V - 7.2 0.033 at VGS = - 6 V - 6.4 • TrenchFET Power MOSFET • 25 V VGS Provides Extra Head Room for Safe Operation

FW352

Abstract: W352 N7217 TA7200
Contextual Info: 注文コード No.N 7 2 1 7 FW352 No. N7217 72602 新 FW352 N チャネルおよび P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 特長 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動の N チャネルおよび P チャネル MOS 形電界効果トランジスタを 1 パッケージに 2 素子内蔵した複

7217

Abstract: datasheet and application 7217 FW352 W352
Contextual Info: Ordering number : ENN7217 FW352 N-Channel and P-Channel Silicon MOSFET FW352 Ultrahigh-Speed Switching Applications • [FW352] 5 0.3 8 1 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 4 5.0 Specifications

GAL16V8QS15

Abstract: 16V8QS GAL16V8QS SH 2104 20-PIN ic ir 2112 pin layout 527S49 gal programming specification opal GAL 16 v 8 D DIP
Contextual Info: Semiconductor GAL16V8QS-10L, -15L 20-Pin 0.8jli EECMOS PLDs General Description Features Th e EECM OS G AL16V8Q S devices are fabricated using N ational’s CS80BEV 0.8|u. E lectrically Erasable C M O S pro­ cess. This advanced process m akes N ational’s

dinverter 768r

Abstract: G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

Contextual Info: Si4971DY New Product Vishay Siliconix Dual P-Channel 25-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.026 @ VGS = - 10 V - 7.2 0.033 @ VGS = - 6 V - 6.4 D TrenchFETr Power MOSFET D 25-V VGS Provides Extra Head Room for Safe Operation

GAL16V8QS

Abstract: 928 6v8a opal VD 5028 GAL programming Guide T0,8N gal16v8qs15lvc GAL16V8QS-10L gal programming algorithm AC021
Contextual Info: Semiconductor GAL16V8QS-10L, -15L 20-Pin 0.8 jli EECM OS PLD s General Description Features Th e EECM OS G AL16V8Q S devices are fabricated using N ational’s CS80BEV 0.8|u. E lectrically Erasable C M O S pro­ cess. This advanced process m akes N ational’s

NJU6855

Abstract: D1497 d1292 128-RGB 128RGB trw cpu 721748 ILI 5960
Contextual Info: NJU6855 暫定資料 160 コモンx コモン×128ＲＧＢ ＲＧＢ 65,536 色カラーSTN ビットマップ LCD ドライバ カラー 概要 外形 NJU6855 は160 コモン×128RGB 65,536 色 カラーSTN ビッ トマップ LCD ドライバです。384 セグメント（128RGB）ドライ

Si4971DY

Abstract: Si4971DY-T1 Si4971DY-T1-E3
Contextual Info: Si4971DY Vishay Siliconix New Product Dual P-Channel 25-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.026 at VGS = - 10 V - 7.2 0.033 at VGS = - 6 V - 6.4 • TrenchFET Power MOSFET • 25 V VGS Provides Extra Head Room for Safe Operation

gal20v8qs

Abstract: GAL20V8QS-15LNC GAL20V8S gal programming algorithm GAL20V8QS-10L cs 2648 GAL20V8QS15LMI WGB 03 HL 006 pAL programming Guide GAL20V8QS10LNC
Contextual Info: GAL20V8QS-10L, -15L 24-Pin 0.8ja EECMOS PLDs General Description Features T h e EECM OS G A L20V8Q S devices are fabricated using N atio n a l’s C S80BEV 0.8/x E lectrically E rasable CM O S pro­ cess. This advanced p rocess m akes N ational's G A L20V 8Q S extrem ely la st, allow ing contro lle d output

FW352

Contextual Info: Ordering number : ENN7217 FW352 N-Channel and P-Channel Silicon MOSFET FW352 Ultrahigh-Speed Switching Applications • [FW352] 5 0.3 8 1 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 4 5.0 Specifications

s2 on of power switch 5 A

Abstract: mosfe Si4971DY Si4971DY-T1 Si4971DY-T1-E3 72174 S-61006-Rev
Contextual Info: Si4971DY Vishay Siliconix New Product Dual P-Channel 25-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.026 at VGS = - 10 V - 7.2 0.033 at VGS = - 6 V - 6.4 • TrenchFET Power MOSFET • 25 V VGS Provides Extra Head Room for Safe Operation

GAL16V8QS-15LNC

Contextual Info: November 1993 Semiconductor GAL16V8QS-10L, -15L 20-Pin 0.8ju, EECMOS PLDs General Description Features The EECMOS GAL16V8QS devices are fabricated using National’s CS80BEV 0.8/j. Electrically Erasable CMOS pro­ cess. This advanced process makes National’s

541009E-3

Abstract: 90277-1 63-8377 587-282 39196 595256 74935 3161 31-5552 38659
Contextual Info: S-Parameter Narrow RF1211D 03/09/04 # HZ S RI R 50 312500000. .908997E+0 .489336E-2 .918152E+0 312512500. .909363E+0 .504273E-2 .918579E+0 312525000. .909668E+0 .518563E-2 .918823E+0 312537500. .910156E+0 .529828E-2 .919067E+0 312550000. .911011E+0 .536669E-2 .919189E+0

744049

Abstract: 642639E 30359 362610E 707001E 740417 543301E-3 43403 32240 74127
Contextual Info: S-Parameter Narrow RF1400D 03/09/04 # HZ S RI R 50 431420000. .658264E+0 .485841E-3 .637421E+0 431432500. .657867E+0 .502661E-3 .636993E+0 431445000. .657623E+0 .505368E-3 .636780E+0 431457500. .657440E+0 .524466E-3 .636536E+0 431470000. .657166E+0 .540092E-3 .636475E+0