718 SOT23 Search Results

LTC1172

Abstract: CTX110092 12v DC SERVO MOTOR CONTROL circuit 2A h bridge irf840 inverter transistor npn 12V 1A Collector Current Zetex AN12 FMMT618 push pull converter 70V motor controller IRF830 inverter irf840
Contextual Info: Application Note 12 Issue 2 January 1996 The FMMT718 Range, Features and Applications Replacing SOT89, SOT223 and D-Pak Products with High Current SOT23 Bipolar Transistors. David Bradbury Neil Chadderton Designers of surface mount products wishing to drive loads with currents

FMMT718

Abstract: sot-23 15V vebo pnp
Contextual Info: A Product Line of Diodes Incorporated FMMT718 20V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • • • • BVCEO > -20V IC = -1.5A Continuous Collector Current ICM = -6A Peak Pulse Current

ZVN4306A TO-5

Abstract: ZTX618 power supply IRF830 APPLICATION mosfet driver with npn transistor high gain PNP POWER TRANSISTOR SOT23 npn high voltage transistor 500v sot23 zvn4306 AN18 irf830 datasheet pnp 500v
Contextual Info: Application Note 18 Issue 1 March 1996 Power MOSFET Gate Driver Circuits using High Current Super-β Transistors 6A Pulse Rated SOT23 Transistors for High Frequency MOSFET Interfacing Neil Chadderton The pow er M OS F ET is c omm only presented and regarded as a voltage

FMMT718

Abstract: FMMT617 FMMT618 FMMT619 FMMT624 FMMT717 FMMT720 FMMT722 FMMT723 ZETEX FMMT-717
Contextual Info: SuperSOT SOT23 PNP SILICON POWER SWITCHING TRANSISTORS DIM A B C D F G K L N Millimeters Min Max 2.67 3.05 1.20 1.40 – 1.10 0.37 0.53 0.085 0.15 NOM 1.9 0.01 0.10 2.10 2.50 NOM 0.95 Inches Min Max 0.105 0.120 0.047 0.055 – 0.043 0.0145 0.021 0.0033 0.0059

FMMT722

Abstract: FMMT617 FMMT618 FMMT619 FMMT624 FMMT717 FMMT718 FMMT720 FMMT723 DSA003671
Contextual Info: SuperSOT SOT23 PNP SILICON POWER SWITCHING TRANSISTORS DIM A B C D F G K L N Millimeters Min Max 2.67 3.05 1.20 1.40 – 1.10 0.37 0.53 0.085 0.15 NOM 1.9 0.01 0.10 2.10 2.50 NOM 0.95 Inches Min Max 0.105 0.120 0.047 0.055 – 0.043 0.0145 0.021 0.0033 0.0059

Contextual Info: SuperSO T SOT23 PNP SILICON POWER SWITCHING TRANSISTORS FMMT717 FMMT718 FMMT720 FMMT722 FMM r !'£ S ISSU E 3 JU N E 1996 FEATU RES • 625mW POWER DISSIPATION * * * * * lc CONT 2.5A lc Up To 10A Peak Pulse Current Excellent hfe Characteristics Up To 10A (pulsed)

FMMT617

Abstract: FMMT618 FMMT619 FMMT624 FMMT717 FMMT718 FMMT720 FMMT722 FMMT723 DSA003671
Contextual Info: SuperSOT SOT23 PNP SILICON POWER SWITCHING TRANSISTORS DIM A B C D F G K L N Millimeters Min Max 2.67 3.05 1.20 1.40 – 1.10 0.37 0.53 0.085 0.15 NOM 1.9 0.01 0.10 2.10 2.50 NOM 0.95 Inches Min Max 0.105 0.120 0.047 0.055 – 0.043 0.0145 0.021 0.0033 0.0059

MMBF4119

Abstract: MMBFJ201
Contextual Info: Surface Mount Transistors Discrete POWER & Signal Technologies National Semi conductor Surface Mount JFETs N-Channel General Purpose Amplifiers Device No. SOT-23 Mark Case Style BVoss (V) @ lG Min (jiA) 'g s s <"A)@ V Max (V) ve 'o (V)@ ^D S Min Max (V) (nA)

MMBFJ202

Abstract: MMBF4119 MMBFJ201 MMBF4117 MMBF4118 MMBF5103 MMBF5457 MMBF5458 MMBF5459 MMBFJ210
Contextual Info: ^ iii^ g-q. TT5DH0 0 DE TT GkSS^w^R; Surface Mount Transistors D iscrete POWER & S ignal Technologies Na t ion a I Semi cond Surface Mount JFETs N-Channel General Purpose Amplifiers Device No. SOT-23 Mark Case Style BV gss (V)@ iG Min (|iA) ’ass <"A)@v dg

Contextual Info: n S I ELECTRONICS INC bOE D SbSb4bb 0000415 7TT BB MSI 'P07'/c SOT-23 PACKAGED VARACTORS FOR LOW VOLTAGE, WIDE-BAND TUNING electronics With a capacitance tuning ratio greater than 5s1 for a reverse bias swing from 0.2 to 6 volts, the MSI ZB600^varactor diode series covers an octave

FMM-1718

Abstract: FMMT720 FMM1717 1DA SOT23 FMMT617 FMMT618 FMMT619 FMMT717 FMMT718 FMMT722
Contextual Info: E-1 I H ‘“”’’’”T’’’’” I I THERMAL CHARACTERISTICS AND DERATING INFORMATION .60 -40 -20 ?0 40 60 AMBIENT TEMPERATURE DEG DERATING 00 >00 120 140 160 CELSIUS CURVE 200 : l.1 150 s z < !7J 100 m s 2 z $ !- 50 O.lms 1ms 1Oms PuLSE MAXIMUM

smd transistor 718

Abstract: FMMT718 TRANSISTOR SMD 1a 9 smd transistor MARKING 2A sot23
Contextual Info: Transistors IC SMD Type Switching Transistor FMMT718 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 IC CONT 2.5A. 0.4 3 625mW power dissipation. 1 Excellent hfe characteristics up to 10A pulsed . 0.55 IC up to 10A peak pulse current.

Contextual Info: Transistors IC ransistor SMD Type Product specification FMMT718 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 IC CONT 2.5A. 0.4 3 625mW power dissipation. 1 0.55 IC up to 10A peak pulse current. 2 Excellent hfe characteristics up to 10A pulsed .

Contextual Info: Supertex inc. BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ b v dgs R dS ON (m ax) Id(ON) (m in ) 100V 6.0Q. 0.5A O rder N um ber / Package Product marking for TO-236AB: TO-236AB* SA* BSS123 where = 2-week alpha date code

BSS84

Abstract: ROB SOT23 BSS110
Contextual Info: National Semiconductor~ June 1995 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

SOT-23 marking 717

Abstract: SAP SOT23 sot-23 MARKING CODE 718
Contextual Info: BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* SA❋ 100V 6.0Ω 0.5A BSS123 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

sot23-6 marking 718

Abstract: 718 SOT23 ZXT10P20DE6 ZXT10P20DE6TA ZXT10P20DE6TC DSA0037439
Contextual Info: ZXT10P20DE6 SuperSOT 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 96m ; IC= -2.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

712 transistor smd sot23

Abstract: 33m ph diode smd transistor 718 diode PH 33m
Contextual Info: Value Code Inductor ph Code .01 .012 .015 .018 000 Oil 001 009 ph Code pFID. .10 .12 .15 .18 010 012 015 018 _ _ . _ .022 002 .22 022 _ _ - _ .027 007 .27 027 - _ .033 003 .33 033 _ - - - .039 009 .39 039 . _ _ - _ .047 004 .47 047 _ _ - _ .056 005 .56 056

j201 national

Abstract: J201 national j201 J202 MMBFJ201 MMBFJ202 T092 SOT23 N-Channel mark 6
Contextual Info: J201 / J202 / MMBFJ201 / MMBFJ202 & Discrete POW ER & Sig n a l Technologies National S e m i c o n d u c t o r ’ MMBFJ201 MMBFJ202 J201 J202 SOT-23 M ark: 62P / G2Q N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general

3V02

Contextual Info: – E ET L O BS BSS123 O –N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* SA❋ 100V 6.0Ω 0.5A BSS123 where ❋ = 2-week alpha date code

Contextual Info: ALLEGRO MICROSYSTEMS INC LIE ]> • 0504330 000b3A7 ■ A L 6R PNP TRANSISTORS TO-92ITO-226AA V*3 W and ‘T P DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C 'cBO DC Current Gain v CEIMl] * le V Max. v BR CBO V y(BR>CEO * (BR)EBO Max. @ v CB hFE K e

j204 siliconix

Abstract: SST5484
Contextual Info: T e m ic J/SST201 Series Siliconix N-Channel JFETs J201 J202 J204 SST201 SST202 SST204 Product Summary P a rt N um ber J/SST201 J/SST202 J/SST204 VGS oir W -0.3 to -1.5 -0 .8 to - 4 -0 .3 to - 2 V(BR)GSS M in (V ) Id ss Min (mA) 0.2 0.9 0.2 0.5 1 0.5 -4 0

SST201

Abstract: j204 siliconix
Contextual Info: T em ic J/SST201 Series S e m i c o n d u c t o r s N-Channel JFETs J201 J202 J204 SST201 SST202 SST204 Product Summary lo ss P a rt N um ber V c s io ff V ) V(BR)GSS M i n (V ) gfs M i n ( m S ) J/SST201 -0 .3 t o -1 .5 -4 0 0.5 0.2 J/SST202 -0 .8 to - 4

Contextual Info: CRD1616-8W CRD1616-8W 8 Watt Reference Design Features General Description • Quasi-resonant Flyback with Constant-current Output The CRD1616-8W reference design demonstrates the performance of the CS1616 single stage dimmable AC/DC LED driver IC with a 250mA output driving 10  LEDs in