715M Search Results

BAP51-02

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • BAP51-02 General Purpose Pin Diodes 715mW Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • BAP51-02 General Purpose Pin Diodes 715mW Lead Free Finish/RoHS Compliant "P" Suffix designates

riaa eq

Abstract: 55D8 LM382 riaa
Contextual Info: — 29 — L M 3 8 2 f t 8 I S t i m £ i l tz i& m :& <r>T " i T ; u Hij rn. Ì B t i n t % <7 o N S f a 7 r;u) £ ft i I L T t 'l ) . f l e t t i . os-s-y'r —i? 141”: ^ /U-— ^ ì C t t Ì U ^ n X / E £ Fee : 40V : 715m W ( T„=25°C

LM381

Abstract: LM381A DIL-7
Contextual Info: - 28- L M 3 8 1 / A f a / * N S - T m h x t u t z u s m g i e E n d e d A f j c o a i R * ' x- § -ä. . o o m m i m n s . . Atii^wmis. o * & F c c : *ov Ti Fd fitM i-.) : 1 7 5 " C /W : 715m W ( T . = 25'C ) •9 — 4 0 V

Contextual Info: WT-U169NG PLCC2 tLED Product Specifications Specification Iv Material Quantity U:360-450 mcd V:450-560mcd W:560-715mcd O @20mA/ Ta= 25 ;Tolerance: + 10% λD 515-535 nm 5nm/Bin O @20mA/ Ta= 25 C;Tolerance: + 0.5nm Vf 2.9-3.7V (0.2V/Bin) O @20mA/ Ta= 25 C ;Tolerance: + 0.05V

TDC1048J

Abstract: TDC1048J6C TDC1048J6 ADC-208MC CA3318C IR3K06 TDC1048B6C
Contextual Info: -217- • 8 t ' i hÌÈJlJJtgJSA- D 3 9 IR3K03A/04A • >-+ - 7" +25' C 20MSPS typ +5V + 1/2LSB +5V TDC1048B6C TRW TFS 20MSPS min ±0. n 0.1% +5,-5. 2V 130mA 75mA 80mA* 35,-220mA -158mA 150mW typ BIN CMOS 6. 4V 715mW BIN TTL,CMOS +5V 250mW typ BIN TTL,CMOS

6550B

Abstract: ADC-208MC CA3318C IR3K06 TDC1048B6C
Contextual Info: • 8 t ' i hÌÈJlJJtgJSA- D 3 æ g ^ —il JlH fi SASifé LIN AL I N ^ liSHöft * typ +5V 130mA 75mA 80mA* 35,-220mA -158mA 150mW typ BIN CMOS 6. 4V 715mW BIN TTL,CMOS +5V 250mW typ BIN TTL,CMOS 2.OVp-p 400mf typ BIN TTL,CMOS 2. OYp-p BIN,CBN ECL -2.0 V

Contextual Info: LM1897N Linear ICs Dual-Channel Audio Preamp/Input Amplifier status Outp Pwr Min. @R load (Ohms) Upper 3dB Frequency (Hz) AV (dB) Min.110 Input Resistance Min. (Ohms)50k THD Max. (%).03Â Quies. Pwr (W)715m Nom. Supp (V)18 Minimum Operating Temp (øC)0 Maximum Operating Temp (øC)70

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • BAP51-02 General Purpose Pin Diodes 715mW Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: WT-U169NG-K849 PLCC2 tLED Product Specifications Specification Iv Material Quantity U:360-450 mcd V:450-560mcd W:560-715mcd O @20mA/ Ta= 25 ;Tolerance: + 10% λD 515-535 nm 5nm/Bin O @20mA/ Ta= 25 C;Tolerance: + 0.5nm Vf 2.9-3.7V (0.2V/Bin) O @20mA/ Ta= 25 C ;Tolerance: + 0.05V

C4027

Abstract: L162 V7-4A39E9 FORCE-25 11350
Contextual Info: CATALOG > X o oo MICRO SWITCH SWITCH - a Honeywell Division FED.MFG.CODE o L I ST ING V 7-4A 39E 9 BASIC C W -C 4 0 2 7 91929 X CD LU c r > l <o : “ ^ | I ^ \ UJ * ^ OBSOLETE .796*.010 040 —0.114*.002HOLE .11-1 p.06 .625*.015t ^ .715MAX 2X .032*.001 .020*.030

TC5117800bnt-60

Abstract: TC5117800B
Contextual Info: TOSHIBA TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM Description The TC5117800BNT is the fast page dynamic RAM organized 2,097,152 words by 8 bits. The TC5117800BNT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,

TC514265DJ

Abstract: TC514265D TC514265 SOJ40-P-400
Contextual Info: TOSHIBA TC514265DJ/DFT-50/60/70 PRELIMINARY 262,144 WORD X 16 BIT EDO HYPER PAGE DYNAMIC RAM Description TheTC514265DJ/DFT is an EDO (hyper page) dynamic RAM organized as 262,144 words by 16 bits. TheTC514265DJ/ DFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide oper­

mc79l05ac

Abstract: MC79L12C
Contextual Info: MC79L00 SERIES NEGATIVE-VOLTAGE REGULATORS D2565, OCTOBER 19B2-REV1SED NOVEMBER 1991 D PACKAGE TOP VIEW 3-Terminal Regulators Output Current Up to 100 mA No External Components Required Internal Thermal Overload Protection OUTPUT[ INPU Ttf INPU Ttf NC[ ] NC

Contextual Info: TPS799xx www.ti.com SBVS056I – JANUARY 2005 – REVISED NOVEMBER 2007 200mA, Low Quiescent Current, Ultra-Low Noise, High PSRR Low Dropout Linear Regulator FEATURES DESCRIPTION 1 • 200mA Low Dropout Regulator with EN • Low IQ: 40µA • Multiple Output Voltage Versions Available:

Contextual Info: TPS717xx www.ti.com. SBVS068G – FEBRUARY 2006 – REVISED APRIL 2009 Low Noise, High-Bandwidth PSRR Low-Dropout 150mA Linear Regulator

Contextual Info: TPS799xx www.ti.com SBVS056I – JANUARY 2005 – REVISED NOVEMBER 2007 200mA, Low Quiescent Current, Ultra-Low Noise, High PSRR Low Dropout Linear Regulator FEATURES DESCRIPTION 1 • 200mA Low Dropout Regulator with EN • Low IQ: 40µA • Multiple Output Voltage Versions Available:

Contextual Info: TPS734xx www.ti.com . SBVS089F – DECEMBER 2007 – REVISED FEBRUARY 2009 250mA, Low Quiescent Current, Ultra-Low Noise, High PSRR

Kc 520 B

Contextual Info: TL750L, TL751L SERIES TL751L05M, TL751L12M, TL750LxxY LOW-DROPOUT VOLTAGE REGULATORS S L V S 0 1 7 B - SEPTEM BER 1 9 8 7 - REVISED AUG UST 1995 • Reverse Transient Protection to -5 0 V • Very Low Dropout Voltage, Less Than 0.6 V at 150 mA • Internal Thermal Overload Protection

Contextual Info: •HYUNDAI H Y 5 1 1 7 4 0 0 S e r ie s 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: TOSHIBA ' m ^0^7240 0020 34 1 R7b • TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM DRAM Description Features Key Parameters 2,097,152 word by 8 bit organization Fast access time and cycle time Single power supply of 5V±10% with a built-in VBB generator

MSM5117800

Abstract: SOJ28
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

Contextual Info: PRELIM INARY- - October 1995 Edition 2.1 = FUJITSU PRODUCT PROFILE SHEET MB8 117805A-60/-70 CMOS 2M X 8BIT HYPER PAGE MODE DYNAMIC RAM CM O S 2,097,152x 8B IT Hyper Page Mode Dynam ic RAM The Fujitsu MB8117805A is a fully decoded CMOS Dynamic RAM DRAM that contains

Contextual Info: HM5118165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-000 Z Preliminary Rev. 1.0 Dec. 1, 1995 Description The Hitachi HM5118165B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5118165B offers Extended