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    711DFL2FCJ Search Results

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    BF982

    Abstract: Transistor BF982 335kW Marking G2 SOT103
    Contextual Info: 711Dfl2fcj GGtTSbl S7S M P H I N BF982 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended for V H F applications, such as V H F television tuners, F M tuners, with 12 V supply voltage.


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    711002tbf982transistor bf982335kw+2marking g2sot103 PDF

    UHF amplifier module

    Abstract: power BJT gp bjt BGY205
    Contextual Info: Philips Semiconductors Objective specification UHF amplifier module BGY205 FEATURES DESCRIPTION • Single 6 V nominal supply voltage The BGY205 is a four-stage UHF amplifier module. It consists of four NPN silicon planar transistor chips mounted together with matching and bias circuit


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    bgy205pinning-sot321bot321buhf amplifier module+2power bjtgp bjt PDF

    ha 13627

    Abstract: P8XC592 TRANSISTOR BSP 149 80C51 P80C592 P80C592FFA P80C592FHA P83C592 P83C592FFA P83C592FHA
    Contextual Info: Philips Semiconductors Product specification 8-bit microcontroller with on-chip CAN P8xC592 CONTENTS 14 INTERRUPTSYSTEM 1 FEATURES 2 GENERAL DESCRIPTION 14.1 14.2 14.3 Interrupt Enable and Priority Registers Interrupt Vectors Interrupt Priority 3 ORDERING INFORMATION


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    p8xc59201g57s4ha 13627transistor bsp 149+780c51p80c592p80c592ffap80c592fhap83c592p83c592ffap83c592fha PDF