70X70X2M Search Results

2B4B41

Abstract: 4b41 2J4B41 2J4B J4B41 2G4B41
Contextual Info: SILICON DIFFUSED TYPE RECTIFIER STACK O SINGLE PHASE BRIDGE RECTIFIER APPLICATIONS. • Average O utput Rectified C urrent : I o = 2.0A • Repetitive Peak Reverse Voltage : 2 B,G,J 4B41 = 100—600V POLARITY (-)» o( + ) (-)» O (-) M A X IM U M RATINGS SYMBOL

BBC OS 0,9 4A

Abstract: 07380 bbc os 0.9 4A
Contextual Info: lb T O S H I B A -CDISC R E T E / O P T O } 909725 0 TO SHI BA T D i 7E S O Q Ü Q 1371 fc, | bbC <DISCRETE/OPTO 0 7 379 2SB993 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS) INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.

Contextual Info: TO SHIBA SM8LZ47 TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR <; m a i SILICON PLANAR TYPE a. 7 7 Unit in mm AC PO W ER CONTROL APPLICATIONS 10.3MAX. • Repetitive Peak Off-State Voltage V dRM • R.M.S. On-State Current i T RM S = • High Commutation (dv / dt)

2SD553

Abstract: Toshiba 2sd553
Contextual Info: TOSHIBA 2SD553 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD553 HIGH CURRENT SWITCHING APPLICATIONS PO W ER A M PLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX Low Saturation Voltage : V q ^ sat “ 0.4V (Max.) (at Complementary to 2SB553.

2SB553

Contextual Info: TO SH IBA 2SB553 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB553 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 10.3MAX, Low Collector Saturation Voltage : v CE(sat)= —0.4V (Max.) at 1C= -4 A

U12JZ47L-TF3-T

Abstract: U12JZ47-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., U12JZ47/A TRIAC HIGH COMMUTATING TRIAC DESCRIPTION The U12JZ47/A is a bi-directional, silicon planar type triac in full plastic pack for AC power control applications. FEATURES * Repetitive Peak off-State Voltage: VDRM = 400, 600V

COSMO 1010

Abstract: cosmo 1010 -817 IC cosmo 1010 cosmo 1010 datasheet Application of electronics circuits to lighting cosmo 1010 application cosmo 1010 -817-g16b KSD205AC3
Contextual Info: KSD205AC3 Solid State Relay Features Outside Dimension : Unit mm 1. Molded epoxy body. 2. Zero crossing circuit. 3. High input/output insulation. 4. Small size and light weight. 5. Can be installed directly on the PC board. 6. Fast reactive speed. 7. Normally open.

U12JZ47A-4

Abstract: triac 65a 400
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD U12JZ47/A TRIAC HIGH COMMUTATING TRIAC „ DESCRIPTION The U12JZ47/A is a bi-directional, silicon planar type triac in full plastic pack for AC power control applications. „ FEATURES 1 * Repetitive Peak off-State Voltage: VDRM = 400, 600V

G2360

Contextual Info: T O SH IB A SM6GZ47,SM6JZ47,SM6GZ47A,SM6JZ47A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM6GZ47, SM6JZ47, SM6GZ47A, SM6JZ47A AC POWER CONTROL APPLICATIONS U nit in mm 10.3M A X. • Repetitive Peak Off-State Voltage V D R M = 400, 600V •

DBA30

Abstract: DBA30B DBA30C DBA30E DBA30G silicon diode 3a DIODE 3A
Contextual Info: Ordering number:EN648D DBA30 Diffused Junction Silicon Diode 3A Single-Phase Bridge Rectifier Features Package Dimensions • Single-phase bridge rectifier applications. · Plastic molded type. · Peak reverse voltage : VRM=100 to 600V. · Average rectified current : IO=3A

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD U12JZ47/A TRIAC HIGH COMMUTATING TRIAC  DESCRIPTION The U12JZ47/A is a bi-directional, silicon planar type triac in full plastic pack for AC power control applications.  FEATURES 1 * Repetitive Peak off-State Voltage: VDRM = 400, 600V

2SB992

Abstract: A76A 2SD 307 2SD1362
Contextual Info: Tb TOSHIBA -CDISCRETE/OPTO} 9097250 TOSHIBA DE clGci72SG DDD737b Q 5öC O T T T ö " <D ISCRETE/OPTO D ^.^379 SILICON PNP TRIPLE DIFFUSED TYPE {PCT PROCESS) INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.

COSMO 1010

Abstract: cosmo 1010 -817 IC cosmo 1010 cosmo 1010 datasheet Application of electronics circuits to lighting KSD210AC3 dv/dt diode protection
Contextual Info: KSD210AC3 Solid State Relay Features Outside Dimension : Unit mm 1. Molded epoxy body. 2. Zero crossing circuit. 3. High input/output insulation. 4. Small size and light weight. 5. Can be installed directly on the PC board. 6. Fast reactive speed. 7. Normally open.

Contextual Info: TOSHIBA SF8G41 A,SF8J41 A TOSHIBA THYRISTOR SILICON DIFFUSED TYPE SF8G41A, SF8J41A Unit in mm MEDIUM POWER CONTROL APPLICATIONS • Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Average On-State Current Gate Trigger Current • • W- V d r m \ _ 400^ 600V

m16jz47

Abstract: 16JZ47 M16GZ47
Contextual Info: T O SH IB A SM 16GZ47,SM 16JZ47,SM 16GZ47A#SM 16JZ47A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM16GZ47, SM16JZ47, SM16GZ47A, SM16JZ47A AC POWER CONTROL APPLICATIONS U nit in mm • Repetitive Peak Off-State Voltage Vd RM • R.M.S On-State C urrent

M8JZ47

Abstract: SM8GZ47
Contextual Info: T O SH IB A SM8GZ47,SM8JZ47,SM8GZ47A,SM8JZ47A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8GZ47, SM8JZ47, SM8GZ47A, SM8JZ47A AC POWER CONTROL APPLICATIONS Unit in mm 10.3MAX. • Repetitive Peak Off-State Voltage Vd r m = 400, 600V • R.M.S On-State Current