70NC Search Results

Contextual Info: FDMS36101L_F085 N-Channel Power Trench MOSFET 100V, 38A, 26mΩ Features „ Typ rDS on = 18mΩ at VGS = 10V, ID = 20A „ Typ Qg(tot) = 70nC at VGS = 10V, ID = 20A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control

Contextual Info: DRAW ING MADE IN A M E R I C A N * PROJECTION 1ST I BY AMP INCORPORATED . ALL RIGHTS RESERVED. AMP PRODUCTS COVERED BY PATENTjS-AND 'OR PATENTS PENDING. 70NC CTR /Tn, A P P R O P R v A T E M I I . \ S S T A \ K P E D ONi i.n a A P / K i J O T / ? \ St/PSD 8 Y 2 C 5 4 S Î - Z % 9/.-’fc'-2.

SFH054

Abstract: 10VGS TL 0621 P
Contextual Info: PRELIMINARY SFH054 SemiWell Semiconductor N-Channel MOSFET Features Symbol • Low RDS on (0.014Ω )@VGS=10V ■ Low Gate Charge (Typical 70nC) Low Crss (Typical 160pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C)

SFP70N06

Contextual Info: SFP70N06 SemiWell Semiconductor N-Channel MOSFET Features Symbol • Low RDS on (0.014Ω )@VGS=10V ■ Low Gate Charge (Typical 70nC) Low Crss (Typical 160pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C) ■

Contextual Info: QFET N-CHANNEL FQAF15N70 FEATURES BVDSS = 700V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 70nC Typ. •

Contextual Info: SCS120KG Datasheet SiC Schottky Barrier Diode Outline VR 1200V IF 20A QC 70nC 1 TO-220AC (2) (3) Inner circuit Features (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible

Contextual Info: QFET N-CHANNEL FQA15N70 FEATURES BVDSS = 700V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 70nC Typ. • Extended Safe Operating Area

2 input and gate 24v

Abstract: gate drive protection smd transistor 26 2SK3575 2SK35
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3575 TO-263 Unit: mm +0.1 1.27-0.1 Features 4.5V drive available. +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 70nC TYP. VDD = 24 V, VGS = 10 V, ID = 83 A Built-in gate protection diode

FQA15N70

Abstract: 700v 5A mosfet
Contextual Info: QFET N-CHANNEL FQA15N70 FEATURES BV qss = 700V Advanced New Design R DS ON Avalanche Rugged Technology = 0.56Î2 lD = 15A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 70nC (Typ.)

Contextual Info: SCS120KG SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 20A QC 70nC 1 TO-220AC (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)

Contextual Info: QFET N-CHANNEL FQAF15N70 FEATURES BV dss = 700V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 70nC Typ. •

SFP70N06

Contextual Info: PRELIMINARY SFP70N06 SemiWell Semiconductor N-Channel MOSFET Features Symbol • Low RDS on (0.014Ω )@VGS=10V ■ Low Gate Charge (Typical 70nC) Low Crss (Typical 160pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C)

smart charge alternator

Contextual Info: FDBL86210_F085 N-Channel Power Trench MOSFET 150V, 169A, 6.3mΩ Features „ Typ rDS on = 5mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 70nC at VGS = 10V, ID = 80A D „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications G „ Automotive Engine Control

MARKING 30 ROHM

Abstract: SCS120KG
Contextual Info: SCS120KG Datasheet SiC Schottky Barrier Diode lOutline VR 1200V IF 20A QC 70nC 1 TO-220AC (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)

Contextual Info: QFET N-CHANNEL FQA15N70 FEATURES BV dss = 700V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 70nC Typ. •

Applications Note U-137

Contextual Info: y UNITRODE UCC1776 UCC2776 UCC3776 PRELIMINARY Quad FET Driver FEATURES DESCRIPTION • High Peak Output Current Each Output - 1.5A Source, 2.0A Sink • W ide Operating Voltage Range 4.5V to 18V • Thermal Shutdown • CMOS Compatible Inputs • Outputs Are Active Low

max31826

Abstract: MAX31826MUA Microcontroller Cross-Reference Q05n 260NC
Contextual Info: 19-6264; Rev 0; 3/12 MAX31826 1-Wire Digital Temperature Sensor with 1Kb Lockable EEPROM General Description The MAX31826 digital thermometer provides 12-bit temperature measurements and communicates over a 1-WireM bus that by definition requires only one data line

max5986

Abstract: vwad MAX5987AETE T1655
Contextual Info: 19-6261; Rev 0; 4/12 EVALUATION KIT AVAILABLE MAX5986A/MAX5987A IEEE 802.3af-Compliant, High-Efficiency, Class 1, Powered Devices with Integrated DC-DC Converter General Description The MAX5986A/MAX5987A provide a complete powersupply solution as IEEE 802.3af-compliant Class 1

AIN97

Abstract: MAX11329
Contextual Info: EVALUATION KIT AVAILABLE MAX11329–MAX11332 3Msps, 12-/10-Bit, 8-/16-Channel ADCs with Post-Mux External Signal Conditioning Access General Description Benefits and Features The MAX11329–MAX11332 are 12-/10-bit with external reference and 500kHz, full-linear-bandwidth, high-speed,

MAX9263

Abstract: MAX9264 prng IEC ACB symbols PJ 62 SPREAD-SPECTRUM SYSTEM
Contextual Info: 19-5644; Rev 1; 3/11 TION KIT EVALUA BLE IL AVA A HDCP Gigabit Multimedia Serial Link Serializer/Deserializer The MAX9263/MAX9264 chipset extends Maxim’s gigabit multimedia serial link GMSL technology to include highbandwidth digital content protection (HDCP) encryption

light sensitive triggers

Abstract: MAX44004 lux meter calibration D622N photodiode CIE eye response photodiode application lux meter human eye
Contextual Info: 19-5997; Rev 0; 5/12 EVALUATION KIT AVAILABLE MAX44004 Digital Ambient Light Sensor General Description The MAX44004 is a wide dynamic range, lowpower ambient light sensor ALS ideal for many light sensing applications: tablets, displays, accessories, medical devices, and light management systems.

Contextual Info: UCC1776 UCC2776 UCC3776 UNITRODE Quad FET Driver PRELIMINARY FEATURES DESCRIPTION • High Peak Output Current Each Output - 1 .5A Source, 2.0A Sink The UCC3776 is a four output BCDMOS buffer/driver designed to drive highly capacitive loads such as power MOSFET gates at high speeds. The

92FA

Abstract: 15FV
Contextual Info: 19-6266; Rev 0; 4/12 EVALUATION KIT AVAILABLE MAX15104 Small 2A, Low-Dropout Linear Regulator in a 2.7mm x 1.6mm Package General Description Features The MAX15104 is a small, low-dropout linear regulator optimized for networking, datacom, and server applications. The regulator delivers up to 2A from a 1.7V to 5.5V

MAX97220

Abstract: MAX97220AETE T MAX97220A MAX97220BETE MAX97220BETE T
Contextual Info: 19-5611; Rev 2; 7/12 TION KIT EVALUA BLE IL AVA A Differential Input DirectDrive Line Drivers/Headphone Amplifiers DirectDrive Features The MAX97220_ is a differential input line driver/headphone amplifier. This device is capable of driving line level loads with 3VRMS into 1kI with a 5V