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Contextual Info: CXK581001 P/M 70LLV85LL SONY, 131,072-word x 8-bit High Speed CMOS S tatic RAM D escription CXK581001 P/M is a 1,048,576 bits high speed CMOS static RAMs organized as 131,072 words by 8-bit and operates from a single 5V supply. This IC is suitable for use in high speed and low power applications in which
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cxk58100170llv072-wordcxk581001p+5cxk581001mcxk581001p/m-70l770llcxk581001p/m-85l/85llcxk581001p/m-70ll785ll
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HI-50BA
Abstract: analog devices 902-2 61ls HI50BA analog devices "902-2" ch9l 251-22-30-160
Contextual Info: ANALOG HighResolution 14-Bit SampleandHoldAmplifier W DEVICES FEATURES :t10V min Input/Output 50ns Aperture Delay 0.5nsApertureJitter -A 6p~Time Range ~ ",;.r/.h';' -r :to.001% Max Gain Linearity Error Complete with Input Buffer APPLICA TlONS Track and Hold
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14-bitshal144ac1580mountinghi-50ba+6analog devices 902-261lshi50baanalog devices "902-2ch9l251-22-30-160
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CXK58267AM-10L
Abstract: CXK58267AM-70L CXK58267AM-12L CXK58267AM-85L 70l7 cxk58267
Contextual Info: SONY. CXK58267AM -70LI785LU101LL712LL 32768-word x 8-bit High Speed CMOS Static RAM Description CXK58267AM is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits and operates from a single 5V supply. The CXK58267AM’s two chip enable inputs are useful for battery back up operation for
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cxk58267am-70l/85l/1ol/12l-70ll/85ll/1oll/12ll+732768-wordcxk58267am-70lcxk58267am-85lcxk58267am-10lcxk58267am-12l70l7cxk58267
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moc 2030
Abstract: 528100 mb84257 LDR 24v
Contextual Info: 'ftB 1 'm FUJITSU November 1992 Edition 1.1 DATA SHEET MB84257A-70/-70L/-70LU-10/-10L/-10LL CMOS 256K-BIT LOW POWER SRAM 32,768 WORD x 8-BIT CMOS STATIC RANDOM ACCESS MEMORY WITH DATA RETENTION The Fujitsu MB84257A is a 32,768-word by 8-b it static random access memory fabricated
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mb84257a-70/-70l/-70lu-10/-10l/-10ll256k-bitmb84257a768-word+4moc 2030528100mb84257ldr 24v
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