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    70LG Search Results

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    GCT Semiconductor Inc BD095-10A-A0-0200-0070-0570-LG

    10W, 1.27MM PITCH PIN HDR, DIL,
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    DigiKey BD095-10A-A0-0200-0070-0570-LG Box 2,783 1
    • 1 $0.65
    • 10 $0.55
    • 100 $0.47
    • 1000 $0.40
    • 10000 $0.34
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    Newark BD095-10A-A0-0200-0070-0570-LG Bulk 904 10
    • 1 -
    • 10 $0.79
    • 100 $0.67
    • 1000 $0.53
    • 10000 $0.46
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    Banner Engineering Corp K70LGYRPQ

    COMPLETE UNIT GR/R/YL 3STACK
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    DigiKey K70LGYRPQ Bulk 9 1
    • 1 $170.00
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    Mouser Electronics K70LGYRPQ 9
    • 1 $170.00
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    Newark K70LGYRPQ Bulk 1 1
    • 1 $198.02
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    Neutron USA K70LGYRPQ 27
    • 1 $357.11
    • 10 $357.11
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    Banner Engineering Corp K70LGRP

    COMPLETE UNIT GR/R STEADY 2STACK
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    DigiKey K70LGRP Box 1 1
    • 1 $161.00
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    Mouser Electronics K70LGRP
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    Newark K70LGRP Bulk 1
    • 1 $161.00
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    Neutron USA K70LGRP 4
    • 1 $296.20
    • 10 $296.20
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    Banner Engineering Corp K70LGYRP

    COMPLETE UNIT GR/R/YL 3STACK
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    DigiKey K70LGYRP Box 1 1
    • 1 $170.00
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    Mouser Electronics K70LGYRP 3
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    Newark K70LGYRP Bulk 1
    • 1 $170.00
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    Neutron USA K70LGYRP 4
    • 1 $293.50
    • 10 $293.50
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    3M Interconnect 4570-LG

    CHEMICAL PROTECTIVE COVERALL
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    DigiKey 4570-LG 1
    • 1 $34.21
    • 10 $30.85
    • 100 $28.49
    • 1000 $27.74
    • 10000 $27.74
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    70LG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: NTD3055L170, NVD3055L170 Power MOSFET 9.0 A, 60 V, Logic Level, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • NVD Prefix for Automotive and Other Applications Requiring


    Original
    NTD3055L170, NVD3055L170 NTD3055L170/D PDF

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original
    CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l PDF

    Contextual Info: NTD3055L170, NVD3055L170 Power MOSFET 9.0 A, 60 V, Logic Level, N−Channel DPAK/IPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features http://onsemi.com 9.0 AMPERES, 60 VOLTS


    Original
    NTD3055L170, NVD3055L170 NTD3055L170/D PDF

    70lg

    Abstract: 3170L 369D AN569 NTD3055L170 NTD3055L170G NTD3055L170T4G
    Contextual Info: NTD3055L170 Power MOSFET 9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • These are Pb−Free Devices http://onsemi.com


    Original
    NTD3055L170 tpv10 NTD3055L170/D 70lg 3170L 369D AN569 NTD3055L170 NTD3055L170G NTD3055L170T4G PDF

    70lg

    Abstract: 3170lg
    Contextual Info: NTD3055L170, NVD3055L170 Power MOSFET 9.0 A, 60 V, Logic Level, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • NVD Prefix for Automotive and Other Applications Requiring


    Original
    NTD3055L170, NVD3055L170 AEC-Q101 tpv10 NTD3055L170/D 70lg 3170lg PDF

    PD488170L

    Abstract: NEC PD488170L 6A50 uPD488170LG NEC RDRAM 36 UPD488170LG6
    Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 18M-BIT Rambus DRAM 1M-WORD X 9-BIT X 2-BANK D escription The 18-M egabit Rambus DRAM RDRAM™ is an extrem ely-high-speed CMOS DRAM organized as 2M w ords by 9 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling


    OCR Scan
    18M-BIT high01000107 PD488170L NEC PD488170L 6A50 uPD488170LG NEC RDRAM 36 UPD488170LG6 PDF