70407GB Search Results

TF252

Abstract: a0841
Contextual Info: TF252 注文コード No. N A 0 8 4 1 三洋半導体データシート N TF252 N チャネル接合型シリコン電界効果トランジスタ コンデンサマイクロホン用 特長 ・ゲインが高い : GV=1.0dB typ VCC=2V, RL=2.2kΩ, Cin=5pF,VIN=10mV, f=1kHz 。

Contextual Info: Ordering number : ENA0841B TF252 N-Channel JFET http://onsemi.com 20V, 140 to 350 A, 1.4mS, USFP Features • • • • • • • • High gain : GV=1.0dB typ VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz Ultrasmall package facilitates miniaturization in end products [1.0mmx0.6mm×0.27mm (max 0.3mm)]

TF252-4-TL-H

Contextual Info: TF252 Ordering number : ENA0841B SANYO Semiconductors DATA SHEET N-channel Silicon Junction FET TF252 Electret Condenser Microphone Applications Features • • • • • • • • High gain : GV=1.0dB typ VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz

TF252TH

Contextual Info: TF252TH Ordering number : ENA0842A SANYO Semiconductors DATA SHEET N-channel Silicon Juncton FET TF252TH Electret Condenser Microphone Applications Features • • • • • • • High gain : GV=1.0dB typ VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz

Contextual Info: TF252 Ordering number : ENA0841A SANYO Semiconductors DATA SHEET N-channel Silicon Junction FET TF252 Electret Condenser Microphone Applications Features • • • • • • • • High gain : GV=1.0dB typ VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz

Contextual Info: Ordering number : ENA0842A TF252TH N-Channel JFET http://onsemi.com 20V, 140 to 350 A, 1.4mS, VTFP Features • • • • • • • High gain : GV=1.0dB typ VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz Ultrasmall package facilitates miniaturization in end products

A0841-2

Abstract: TF252
Contextual Info: TF252 Ordering number : ENA0841 SANYO Semiconductors DATA SHEET TF252 N-channel Silicon Junction FET Electret Condenser Microphone Applications Features • • • • • • • High gain : GV=1.0dB typ VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz . Ultrasmall package facilitates miniaturization in end products [1.0mm✕0.6mm✕0.27mm (max 0.3mm)].

7039a

Abstract: EC3A04B ECSP1006-3 ITR00636 TA1205 IT11450
Contextual Info: EC3A04B 注文コード No. N A 0 5 0 9 B 三洋半導体データシート 半導体データシート No.NA0509A をさしかえてください。 EC3A04B N チャネル接合型シリコン電界効果トランジスタ 低周波一般増幅用 , インピーダンス変換用

7039a

Abstract: EC3A04B ECSP1006-3
Contextual Info: EC3A04B Ordering number : ENA0509B SANYO Semiconductors DATA SHEET N-Channel Junction Silicon FET EC3A04B Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Applicatins • Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications.

TF252TH

Abstract: SS1D
Contextual Info: TF252TH Ordering number : ENA0842 SANYO Semiconductors DATA SHEET TF252TH N-channel Silicon Junction FET Electret Condenser Microphone Applications Features • • • • • • • High gain : GV=1.0dB typ VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz .

Contextual Info: EC3A04B Ordering number : ENA0509B SANYO Semiconductors DATA SHEET N-Channel Junction Silicon FET EC3A04B Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Applicatins • Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications.

Contextual Info: TF252 Ordering number : ENA0841B SANYO Semiconductors DATA SHEET N-channel Silicon Junction FET TF252 Electret Condenser Microphone Applications Features • • • • • • • • High gain : GV=1.0dB typ VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz

EC3A04B

Contextual Info: EC3A04B Ordering number : ENA0509 SANYO Semiconductors DATA SHEET N-Channel Junction Silicon FET EC3A04B Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Applicatins • Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications.

Contextual Info: TF252 Ordering number : ENA0841 SANYO Semiconductors DATA SHEET TF252 N-channel Silicon Junction FET Electret Condenser Microphone Applications Features • • • • • • • High gain : GV=1.0dB typ VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz . Ultrasmall package facilitates miniaturization in end products [1.0mm✕0.6mm✕0.27mm (max 0.3mm)].

TF252TH

Abstract: a08424
Contextual Info: TF252TH 注文コード No. N A 0 8 4 2 三洋半導体データシート N TF252TH N チャネル接合型シリコン電界効果トランジスタ コンデンサマイクロホン用 特長 ・ゲインが高い : GV=1.0dB typ VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz 。

Infrared-Sensor

Abstract: EC3A04B
Contextual Info: EC3A04B Ordering number : ENA0509A SANYO Semiconductors DATA SHEET N-Channel Junction Silicon FET EC3A04B Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Applicatins • Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications.

Contextual Info: TF252 Ordering number : ENA0841 SANYO Semiconductors DATA SHEET TF252 N-channel Silicon Junction FET Electret Condenser Microphone Applications Features • • • • • • • High gain : GV=1.0dB typ VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz . Ultrasmall package facilitates miniaturization in end products [1.0mm✕0.6mm✕0.27mm (max 0.3mm)].