702 Z TRANSISTOR Search Results

EL 14v 4c

Abstract: z06m Q62702-D98 transistor 1B transistor 7g BDY39 Transistor bdy 11
Contextual Info: N P N -T ran sisto r fü r leistungsstarke N F -E ndstufen BDY 39 BDY 39 ist ein einfachdiffundierter NPN -Silizium -Transistor im Gehäuse 3 A 2 DIN 41 872 ähnlich T O -3 . Der Kollektor ¡st m it dem Gehäuse elektrisch verbunden. Der Transistor ist besonders für den Einsatz in leistungsstarken NF-Endstufen und in stabilisierten Netzgeräten

MJE800

Abstract: TRANSISTOR S 802 MJE800/801/803 equivalent
Contextual Info: MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor

transistor k 702

Abstract: TRANSISTOR S 802 kse800
Contextual Info: KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor

Contextual Info: r T T N I / I A dvanced 1 ALD1702A/ALD1702B ALDI 702/ALD1703 L in e a r D e v ic e s , I n c . 5V RAIL TO RAIL PRECISION OPERATIONAL AMPLIFIER GENERAL DESCRIPTION FEATURES The A LD 1702/A LD 1703 is a monolithic operational amplifier intended primarily for a wide range of analog applications in +5V single power

transistor+2146

Contextual Info: MDS-GN-650 ELM Rev 1 MDS-GN-650ELM 650 Watts - 65 Volts, Mode-S ELM Avionics 1030-1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The MDS-GN-650ELM is an internally matched, COMMON SOURCE, class AB GaN on SiC high power transistor specifically designed for Mode-S ELM

Contextual Info: TOSHIBA 2SC5260 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5260 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • Low Noise Figure : NF = 1.7dB f=2GHz • High Gain : Gain = 8.5dB (f = 2GHz) M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC

S21cl

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR 2 3 Q 4 Q 3 Q U n it in mm V H F - U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • Low N oise F igure, H igh G ain. I N F = l.l d B , | S 2 i e l 2 = 1 2 d B f= lG H z CJ.S J I J . l ,— I

Contextual Info: N AUER PHILIPS/DISCRETE ^ 5 3 1 3 1 0QSfl7b7 345 H A P X BLT90/SL b^E D A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 M H z communications band. This device has been designed specifically for class-B operation.

Contextual Info: 1214GN-550V 550 Watts - 50 Volts, 300 s, 10% Broad Band 1200 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 1214GN-550V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain,

transistor C 2615

Contextual Info: 1214GN-180LV 180 Watts - 50 Volts, 3ms, 30% Broad Band 1200 - 1400 MHz PRELIMINARY GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 1214GN-180LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16.6dB

Contextual Info: S G S -T H O M S O N SD1398 ;U RF & MICROWAVE TRANSISTORS 850-960 MHz APPLICATIONS 850 - 960 MHZ 24 VOLTS COMMON EMITTER OVERLAY GEOMETRY GOLD METALLIZATION P o u t = 6.0 W MIN. WITH 10.0 dB GAIN PIN CONNECTION 1 n O O DESCRIPTION The SD1398 is a gold metallized epitaxial silicon

Contextual Info: 2729GN-400 Rev 1 2729GN-400 400 Watts - 65 Volts, 100 s, 10% Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 2729GN-400 is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 11dB gain, 400 Watts

Contextual Info: 0912GN-300.Rev2 0912GN-300 300 Watts - 65 Volts, 128 s, 10% Broad Band Data Link 960 - 1215 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 0912GN-300 is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain,

Contextual Info: Preliminary 1011GN-700ELM Rev 2 1011GN-700ELM 700 Watts – 70% Efficiency Mode-S ELM, Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 1011GN-700ELM is a common source, class AB, GaN on SiC HEMT power transistor specifically designed for Mode-S ELM Applications. It is

Contextual Info: 1214GN-280 280 Watts - 60 Volts, 300 s, 10% L-Band Radar 1200 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 1214GN-280 is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 17dB gain,

NE32584C-T1

Abstract: nec 3435 transistor am 4428
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.

c380 NPN transistor

Abstract: transistor c380 c380 transistor c380 C379 BCW73 Q62702-C383-V1 48v to 24v buck c380 pnp Q62702-C383
Contextual Info: NPIM-Silizium-Transistoren BCW BCW - BCW BCW 73 74 77 78 BCW 73, BCW 74, BCW 77 und BCW 78 sind epitaktische NPN -Silizium -Planar-Transistoren. Der Kollektor ist m it dem Gehäuse elektrisch verbunden. Die Transistoren eignen sich als

Contextual Info: 1214GN-280LV 280 Watts - 50 Volts, 200 s, 20% L-Band Radar 1200 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 1214GN-280LV is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 16.5dB

GP 704

Abstract: b09 n03 transistor
Contextual Info: Blackfin+ Core Embedded Processor Preliminary Technical Data ADSP-BF700/701/702/703/704/705/706/707 FEATURES MEMORY Blackfin+ core with up to 400 MHz performance Dual 16-bit or single 32-bit MAC support per cycle 16-bit complex MAC and many other instruction set

RCA 40250

Abstract: 8350a 8203B Transistors RCA 41013 40250 RCA 8203A rca 383 2N62* rca to3 2n3283 2N4037 RCA
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 250 MHz . . . I r to 60 A . . . P r to 140 W ic • 1 A HIM . P f ■ 5 W m ax. T O -3 9 * le * - 1 A MX. P j « 7 W m ax. (T O -» ) • 30 x 30* 30x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053 2N4037 ic ■ 2 A m ax.

Contextual Info: 1011GN-700ELM 700 Watts – 70% Efficiency Mode-S ELM, Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 1011GN-700ELM is a common source, class AB, GaN on SiC HEMT power transistor specifically designed for Mode-S ELM Applications. It is capable of delivering 700 Watts of pulsed peak power

BZY88-C3V3

Abstract: BLW33 BY206 702 P TRANSISTOR 100A-4R3-C-PX-50 carbon resistor
Contextual Info: bSE T> m 7110flEb 00b3514 347 « P H I N BLW33 PHILIPS INTERNATIONAL U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation

marking R24

Abstract: 2sc4226 nec 2741 MARKING 702 6pin ic
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA801T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 6-PIN 2 ELEMENTS MINI MOLD The µPA801T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS (Unit: mm)

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