702 SOT 23 Search Results

sot 23 70.2

Abstract: sot-23 MARKING CODE 70.2 SOT-23 Marking code MU sot23 702 sot-23 702 7002 SOT-23 sot-23 MARKING CODE GS 702 sot 23 diode marking code MU 702W
Contextual Info: 2N7002 inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices b v dss/ b v dgs R dS<ON m ax) ' d(ON) (min) 60V 7 .5 0 0.5A Order Num ber / Package Product marking for SOT-23: SOT-23 702* 2N7002 w here * = 2-w eek alpha date code

702 sot23

Abstract: 1UW SOT 23 70.2 SOT23 ADG701 ADG701BRM ADG701BRT ADG702 ADG702BRM ADG702BRT 702 sot 23
Contextual Info: a CMOS 2V/3V/5V Low Ron Precision Switch Preliminary Technical Data ADG701/702 FEATURES +1.8V to +5.5V Single Supply 1Ω On Resistance Low On-Resistance Flatness Bandwidth 100MHz Rail to Rail Operation Very Low Distortion 6-lead SOT-23 8-lead µSOIC Packages

702 sot23

Contextual Info: a CMOS 2V/3V/5V Low Ron Precision Switch Preliminary Technical Data ADG701/702 FEATURES +1.8V to +5.5V Single Supply 1Ω On Resistance Low On-Resistance Flatness Bandwidth 100MHz Rail to Rail Operation Very Low Distortion 6-lead SOT-23 8-lead µSOIC Packages

sot-23 MARKING CODE 70.2

Abstract: marking 702 sot-23 sot-23 marking 702 sot-23 702 2N7002 MARKING 2N7002 MARKING 702 2N7002 p-channel SOT-23 20V
Contextual Info: 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* 702❋ 60V 7.5Ω 0.5A 2N7002 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

2N7002

Abstract: 2N7002 MARKING 712
Contextual Info: 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* 702❋ 60V 7.5Ω 0.5A 2N7002 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

150X1

Contextual Info: 2N7002 N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY SOT-23 V BR DSS (V) r DS(ON) ( il) (A) 60 7 .5 0 .1 1 5 TOP VIEW •d ID 2 HU 10 3 1 DRAIN 2 SOURCE 3 GATE Performance Curves: VNDS06 PRODUCT MARKING 2N7002 702 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

Contextual Info: N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ R d S ON I d (ON) Order Number / Package Product marking for TO-236AB: b v dgs (max) (min) TO-236AB* 702 * 60V 7.5Û 0.5A 2N7002 where * = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

2N7002 MARKING 712

Abstract: 2N7002 800mA SOT-23 Marking code MU
Contextual Info: Supertex inc. 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for TO-236AB: BVoss / BVoos R d S<ON ' d ON) (max) (min) TO-236AB* 702* 60V 7.5Q 0.5A 2N7002 where * = 2-week alpha date code “Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

sot 23 70.2

Abstract: L2N7002LT1G marking 702 sot23 702 sot 23 L2N7002LT1G SOT-23
Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product are Halogen Free and compliance with RoHS requirements. 1 2 • ESD Protected:1000V CASE 318, STYLE 21 SOT– 23 TO–236AB

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product compliance with RoHS requirements. 1 • ESD Protected:1000V 2 CASE 318, STYLE 21 SOT– 23 TO–236AB MAXIMUM RATINGS

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 3 • Pb−Free Package is Available. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ

AA115 diode

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1 N–Channel SOT–23 3 • Pb−Free Package is Available. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G S-L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product are Halogen Free and compliance with RoHS requirements. 1 • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring

marking 702 sot23

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1 N–Channel SOT–23 3 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR 60 Vdc Drain Current – Continuous TC = 25°C (Note 1.)

Contextual Info: 2N7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60 Vdc Drain−Gate Voltage RGS = 1.0 MW VDGR 60 Vdc ID ID

702 sot

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60

2N7002LT1

Abstract: 2N7002LT3G 2N7002L 2N7002LT1G 2N7002LT3
Contextual Info: 2N7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60 Vdc Drain−Gate Voltage RGS = 1.0 MW VDGR 60 Vdc ID ID

sot-23 MARKING CODE 70.2

Abstract: 2N7002LT1 702 sot-23 2N7002LT3 mst 702 sot-23 702 marking 702 sot-23 Sot-23 MARKING 702
Contextual Info: 2N7002LT1 Preferred Device Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR 60 Vdc Drain Current – Continuous TC = 25°C (Note 1.)

2N7002L

Abstract: 2N7002LT3G 2N7002LT1G 2N7002LT3H
Contextual Info: 2N7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • AEC Qualified • PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60

2V7002LT1G

Contextual Info: 2N7002L, 2V7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • 2V Prefix for Automotive and Other Applications Requiring Site and • • • Change Controls AEC Qualified − 2V7002L PPAP Capable − 2V7002L These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: 2N7002L, 2V7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • 2V Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 2V7002L These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

tip 220

Abstract: BDW 65 C TIP 122 127 tip 130 TIP 122 tip 127 803 SGS B0680 BDX54S BDX53 SGS TO 220
Contextual Info: f Z J SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MOtíMIILIOTtMOtÉS POWER BIPOLAR EPITAXIAL BASE HIGH GAIN DARLINGTONS 30 A, VQEO : 45 — 180 V Epitaxial base - Ic m : 2 Internal schematic diagrams NPN and PNP types Medium V q e o range 45 to 180 V

Contextual Info: BEE D • û53b32Q QG1712b b « S I P NPN Silicon Switching Transistors 3 S'” I Ì SIEMENS/ S P C L i • • • SEMKONDS BSS79 BSS 81 _ High DC current gain Low collector-emitter saturation voltage Complementary types: B S S 80, BSS 82 PNP

Bow94c

Abstract: MJE 131 BD 147 tip 220 sgs mosfet SGSD93G b0333 B0680 bow93b bdw 34 a
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80