702 PNP Search Results

702 A TRANSISTOR

Abstract: TRansistor 701 702 P TRANSISTOR
Contextual Info: MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor

Contextual Info: KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor

ic 701

Abstract: ic 701 fairchild 702 transistor 701 transistor mje700 TRansistor 701
Contextual Info: MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 TO-126 1 1 . Emitter 2. Collector 3. Base PNP Epitaxial Silicon Darlington Transistor

702 y TRANSISTOR

Abstract: KSE800
Contextual Info: PNP EPITAXIAL KSE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BAS E-EMITTER RESISTORS * Complement to KSE800/801/802/803 ABSOLUTE MAXIMUM RATINGS C haracteristic

702 TRANSISTOR

Abstract: ic 701 fairchild TRansistor 701 702 pnp 702 Fairchild ic 701 transistor 702 701 ic MJE700
Contextual Info: PNP EPITAXIAL MJE700/701/702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 IC= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complement to MJE800/801/802/803 ABSOLUTE MAXIMUM RATINGS Characteristic

ic 701

Contextual Info: PNP EPITAXIAL KSE700/701/702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @IC= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complement to KSE800/801/802/803 ABSOLUTE MAXIMUM RATINGS Characteristic

m12x1 female connector

Abstract: M12x1 connector L-286 702 L
Contextual Info: 765 Ü TI 620 Verbindungsleitungen Serie 765 M8 - M12 Connecting cables series 765 (M8 - M12) Bezeichnung – Abbildung Description – Figure Steckverbinder Connectors Maßzeichnung Drawing Polzahl Kabel Contacts Cable (mm2) 702 1.12 l=2m (2,2 yd) 3 3 x 0,25

JE802

Abstract: MJE802 transistor tic 701 MJE800 MJE101 transistor mje802 MJE801 MJE803 MJE702 MJE703
Contextual Info: MJE700thru MJE703 PNP/MJE800 thru MJE803 NPN continued E L E C T R IC A L C H A R A C T E R IS T IC S (T q = 25°C unless otherwise noted) | Characteristic O F F C H A R A C T E R IS T IC S Collector-Emitter Breakdown VoltageM) (1C * 50 m Adc , \ q « 0)

MJE801

Abstract: MJE802 JE700 MJE703 je802 MJE800 MJE803 transistor mje802 TRANSISTOR JC 515 MJE701
Contextual Info: MJE700 thru MJE703 PNP SILICON MJE800 th,uMJE803 NPN 4.0 AMPERE PLASTIC MEDIUM-POW ER C O M PLEM EN T A R Y SILIC O N T R A N SIST O R S . . . designed to replace discrete driver and o u tp u t stages in co m p le ­ m entary a u d io am plifier applications.

bd437 siemens

Abstract: transistor d437 D437 transistor bd 439
Contextual Info: ESC D • ôSBSbOS QQQ43b3 4 M S I E 6 • -h ' z i -H NPN Silicon Epibase Transistors ' BD 433 BD 435 0 -BD 437 BD 439 BD 441 SIEMENS AKTIENGESELLSCHAF The transistors BD 4 3 3 , BO 4 3 5 , BD 4 3 7 , BD 4 3 9 , and BD 441 are NPN silicon epibase

digital transistor array

Abstract: marking 702 sot363
Contextual Info: SIEMENS BCR 169S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package • Built in bias resistor (R1=4.7kQ) Cl U 12 FI FI FI U lii ÜJ Type Marking Ordering Code Pin Configuration

2sb945

Contextual Info: P ow er T ransistors 2SB945 2SB945 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD127Q • Features • Low c o lle c to r-e m itte r sa tu ra tio n v o lta g e V c e <ssd • G ood lin earity o f DC c u r r e n t gain (Iife )

2SB945

Contextual Info: Power Transistors 2SB945 2SB945 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD127Q . *-* U n it mm 4 .¿m ax. 10-2max. • Features 2.9 max. • L ow c o lle c to r -e m itte r s a tu ra tio n v o lta g e V ce <ssd

Contextual Info: BEE D • û53b32Q QG1712b b « S I P NPN Silicon Switching Transistors 3 S'” I Ì SIEMENS/ S P C L i • • • SEMKONDS BSS79 BSS 81 _ High DC current gain Low collector-emitter saturation voltage Complementary types: B S S 80, BSS 82 PNP

BD675

Abstract: BD676 BD676A BD678 BD678A BD680 BD680A BD682 BD684 MJE700
Contextual Info: ,6,62  /LF 46&/  Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP DARLIGNTON POWER SILICON TRANSISTORS EC BD676, 676A BD678, 678A BD680, 680A BD682, 684 TO126 Plastic Package B For Use As Output Devices In Complementary General Purpose Amplifier Applications.

BD684

Abstract: BD680 BD682 BD675 BD676 BD676A BD678 BD678A BD680A MJE700
Contextual Info: Continental Device India Limited  An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP DARLIGNTON POWER SILICON TRANSISTORS EC BD676, 676A BD678, 678A BD680, 680A BD682, 684 TO126 Plastic Package B For Use As Output Devices In Complementary General Purpose Amplifier Applications.

tip 220

Abstract: BDW 65 C TIP 122 127 tip 130 TIP 122 tip 127 803 SGS B0680 BDX54S BDX53 SGS TO 220
Contextual Info: f Z J SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MOtíMIILIOTtMOtÉS POWER BIPOLAR EPITAXIAL BASE HIGH GAIN DARLINGTONS 30 A, VQEO : 45 — 180 V Epitaxial base - Ic m : 2 Internal schematic diagrams NPN and PNP types Medium V q e o range 45 to 180 V

to225aa

Abstract: BD678 bd676 BD682 equivalent to225aa case
Contextual Info: BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications.

complementary npn-pnp

Abstract: Mjw0302 MJW0281A
Contextual Info: MJW0281A NPN MJW0302A (PNP) Preferred Devices Advance Information Complementary NPN−PNP Silicon Power Bipolar Transistors http://onsemi.com The MJW0281A and MJW0302A are PowerBase t power transistors for high power audio. • Designed for 100 W Audio Frequency Applications

BCW75

Abstract: C382V BCW79 BCW76 ptoc 6
Contextual Info: BCW BCW - BCW BCW P N P -S iliz iu m -T r a n s is to r e n 75 76 79 80 BCW 75, BCW 76, BCW 79 und BCW 80 sind epitaktische PNP-Silizium -Planar-Transistoren. Der Kollektor ist m it dem Gehäuse elektrisch verbunden. Die Transistoren eignen sich als

bd680

Abstract: bd678 bd676 bd-678
Contextual Info: MOTOROLA Order this document by BD676/D SEMICONDUCTOR TECHNICAL DATA BD676 BD676A BD678 BD678A BD680 BD680A BD682 P la stic M edium -Pow er S ilico n PNP Darlingtons . . . for use as output devices in complementary general-purpose amplifier applica­ tions.

DM 0265 R

Abstract: LTA 902 BD902-S
Contextual Info: MOTOROLA SC X S T R S /R 12E D F | b3b?2 S4 3 | BD896, BD896A BD898, BD898A BD900, BD900A BD902 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM-POWER PNP TRANSISTORS . GDÖMTfe.? DARLINGTON 8 AMPERE SIUCON POWER TRANSISTORS fo r use as output devices in com plem entary general-purpose am p­

BD675 MOTOROLA

Abstract: BD675 BD676 BD676A BD678 BD678A BD680 BD680A BD682 transistor BD 680
Contextual Info: MOTOROLA Order this document by BD676/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc

BD 139 transistor

Abstract: BD676 BD678 BD676 equivalent BD675 BD676A BD678A BD680 BD680A BD682
Contextual Info: MOTOROLA Order this document by BD676/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc