702 PNP Search Results

702 A TRANSISTOR

Abstract: TRansistor 701 702 P TRANSISTOR
Contextual Info: MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor

702 TRANSISTOR

Abstract: 702 pnp
Contextual Info: KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor

702 TRANSISTOR

Abstract: 702 pnp ON 001 702 transistor k 702
Contextual Info: MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor

702 y TRANSISTOR

Abstract: 702 Z TRANSISTOR transistor marking 702 application marking 702 FAIRCHILD ic 701
Contextual Info: KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor

Contextual Info: KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor

702 P TRANSISTOR

Abstract: 702 TRANSISTOR ic 701 E702 TRansistor 701 ic 701 fairchild 702 pnp fairchild 703
Contextual Info: KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor

ic 701

Abstract: ic 701 fairchild 702 transistor 701 transistor mje700 TRansistor 701
Contextual Info: MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 TO-126 1 1 . Emitter 2. Collector 3. Base PNP Epitaxial Silicon Darlington Transistor

702 P TRANSISTOR

Abstract: LTA 702 TRansistor L 701 LTA 703 S 701 transistor 702 transistor k/702 P transistor
Contextual Info: KSE700/701/702/703 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MINhFE=750 @ lc= -1.5 and -2 .0 A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • Complement to KSE800/801/802/803 ABSOLUTE MAXIMUM RATINGS -

LTA 703 S

Abstract: LTA 702 LTA 702 N LTA 702 p ic 701 LTA 703 lta 803
Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRAN SISTO R KSE700/701/702/703 HIGH DC CURRENT GAIN MIN hFE= 750 @lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS Complement to KSE800/801/802/803 ABSOLUTE MAXIMUM RATINGS Characteristic

702 y TRANSISTOR

Abstract: KSE800
Contextual Info: PNP EPITAXIAL KSE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BAS E-EMITTER RESISTORS * Complement to KSE800/801/802/803 ABSOLUTE MAXIMUM RATINGS C haracteristic

702 TRANSISTOR

Abstract: ic 701 fairchild TRansistor 701 702 pnp 702 Fairchild ic 701 transistor 702 701 ic MJE700
Contextual Info: PNP EPITAXIAL MJE700/701/702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 IC= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complement to MJE800/801/802/803 ABSOLUTE MAXIMUM RATINGS Characteristic

702 TRANSISTOR

Abstract: transistor 702 TRansistor 701 ic 701 702 Z TRANSISTOR ir 701 702 pnp kse800 q 702 TRansistor L 701
Contextual Info: PNP EPITAXIAL KSE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to KSE800/801/802/803 ABSOLUTE MAXIMUM RATINGS Characteristic

ic 701

Contextual Info: PNP EPITAXIAL KSE700/701/702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @IC= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complement to KSE800/801/802/803 ABSOLUTE MAXIMUM RATINGS Characteristic

m12x1 female connector

Abstract: M12x1 connector L-286 702 L
Contextual Info: 765 Ü TI 620 Verbindungsleitungen Serie 765 M8 - M12 Connecting cables series 765 (M8 - M12) Bezeichnung – Abbildung Description – Figure Steckverbinder Connectors Maßzeichnung Drawing Polzahl Kabel Contacts Cable (mm2) 702 1.12 l=2m (2,2 yd) 3 3 x 0,25

ADG729

Abstract: 2N3906 ADG709 ADT7461 AN-702
Contextual Info: AN-702 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106 • Tel: 781/329-4700 • Fax: 781/326-8703 • www.analog.com Using the ADT7461 as a Multichannel Temperature Sensor by Susan Pratt ential multiplexer in conjunction with the ADT7461. Both

702 Z TRANSISTOR

Abstract: 702 TRANSISTOR npn 702 TRANSISTOR S6020 TL MJE2955T 702 pnp TRANSISTOR S 802 4A complementary transistor TRansistor 701
Contextual Info: SAMSUNG S E M I C ON D U CT OR INC i 4É D ¡ 7*11,4142 0 0 0 7 7 0 4 5 NpN EPITAXIAL MJE700/701/702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE—750 @ IC -1 .5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS

JE802

Abstract: MJE802 transistor tic 701 MJE800 MJE101 transistor mje802 MJE801 MJE803 MJE702 MJE703
Contextual Info: MJE700thru MJE703 PNP/MJE800 thru MJE803 NPN continued E L E C T R IC A L C H A R A C T E R IS T IC S (T q = 25°C unless otherwise noted) | Characteristic O F F C H A R A C T E R IS T IC S Collector-Emitter Breakdown VoltageM) (1C * 50 m Adc , \ q « 0)

MJE801

Abstract: MJE802 JE700 MJE703 je802 MJE800 MJE803 transistor mje802 TRANSISTOR JC 515 MJE701
Contextual Info: MJE700 thru MJE703 PNP SILICON MJE800 th,uMJE803 NPN 4.0 AMPERE PLASTIC MEDIUM-POW ER C O M PLEM EN T A R Y SILIC O N T R A N SIST O R S . . . designed to replace discrete driver and o u tp u t stages in co m p le ­ m entary a u d io am plifier applications.

bd437 siemens

Abstract: transistor d437 D437 transistor bd 439
Contextual Info: ESC D • ôSBSbOS QQQ43b3 4 M S I E 6 • -h ' z i -H NPN Silicon Epibase Transistors ' BD 433 BD 435 0 -BD 437 BD 439 BD 441 SIEMENS AKTIENGESELLSCHAF The transistors BD 4 3 3 , BO 4 3 5 , BD 4 3 7 , BD 4 3 9 , and BD 441 are NPN silicon epibase

BR101

Abstract: bry39 philips bry39 PH 40 E 702 sot23 2N4870 BRY62 Type Transistors 702
Contextual Info: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors PNPN DEVICES OVERVIEW leaded surface-m ount TO -72 TO-92 SOT23 SOT143 BR101 BRY39 BRY56 2N4870/PH 2N6027/PH 2N6028/PH BRY61 BRY62

Contextual Info: I □501130 PNP Medium Power (continued V Device No. Case Style CBO V CEO V EBO *CBO w h FE 004047b (V) Min (V) Min (V) Min Max (V' Min Max @ ‘c (mA) & VCE (V) V CE(SAT) V BE(SAT) oo & Max Min C ot | * on * Max (mA) (PF) Max fT >c ‘ (off) (MHz) @ (ns)

BD676

Abstract: BD682 cross reference BD682 equivalent transistor BD 680 BD676 time failure transistor Bd682
Contextual Info: BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 Plastic Medium-Power Silicon PNP Darlingtons http://onsemi.com .for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain – • • • hFE = 750 Min @ IC = 1.5 and 2.0 Adc

digital transistor array

Abstract: marking 702 sot363
Contextual Info: SIEMENS BCR 169S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package • Built in bias resistor (R1=4.7kQ) Cl U 12 FI FI FI U lii ÜJ Type Marking Ordering Code Pin Configuration

mbgs

Abstract: BFQ245
Contextual Info: Philips Semiconductors Product specification PNP video transistor BFQ245 APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors. DESCRIPTION PNP silicon transistor encapsulated in a 3-lead plastic SOT128B package.