702 MOSFET Search Results

JANSR2N7484T3

Abstract: diode.18 IRHY53130CM IRHY54130CM IRHY57130CM JANSF2N7484T3 JANSG2N7484T3 JANSH2N7484T3
Contextual Info: PD - 93826D IRHY57130CM JANSR2N7484T3 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 TECHNOLOGY 5 ™ Product Summary Part Number IRHY57130CM IRHY53130CM IRHY54130CM Radiation Level 100K Rads (Si) 300K Rads (Si)

IRHY53130CM

Abstract: IRHY54130CM IRHY57130CM JANSF2N7484T3 JANSG2N7484T3 JANSH2N7484T3 JANSR2N7484T3
Contextual Info: PD - 93826C IRHY57130CM JANSR2N7484T3 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 TECHNOLOGY 4# c Product Summary Part Number IRHY57130CM IRHY53130CM IRHY54130CM Radiation Level 100K Rads (Si) 300K Rads (Si)

SHD239606

Contextual Info: SENSITRON SEMICONDUCTOR SHD239606 TECHNICAL DATA DATA SHEET 702, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 500 Volt, 0.23 Ohm MOSFET œ Isolated and Hermetically Sealed œ Surface Mount Package MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT

702 mosfet

Abstract: SHD239606 RG 702 Diode
Contextual Info: SENSITRON SEMICONDUCTOR SHD239606 TECHNICAL DATA DATA SHEET 702, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 500 Volt, 0.23 Ohm MOSFET œ Isolated and Hermetically Sealed œ Surface Mount Package MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT

Contextual Info: PD-93826E IRHY57130CM JANSR2N7484T3 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHY57130CM 100K Rads (Si) IRHY53130CM 300K Rads (Si) IRHY54130CM 500K Rads (Si)

Contextual Info: PD-93826E IRHY57130CM JANSR2N7484T3 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHY57130CM 100K Rads (Si) IRHY53130CM 300K Rads (Si) IRHY54130CM 500K Rads (Si)

IRHF58034CM

Abstract: IRHY53034CM IRHY54034CM IRHY57034CM JANSR2N7483T3
Contextual Info: PD - 93825C IRHY57034CM JANSR2N7483T3 60V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 5 Product Summary TECHNOLOGY ™ Part Number Radiation Level RDS(on) IRHY57034CM 100K Rads (Si) 0.04Ω ID QPL Part Number 18*A JANSR2N7483T3

JANSR2N7483T3

Abstract: IRHF58034CM IRHY53034CM IRHY54034CM IRHY57034CM
Contextual Info: PD - 93825D IRHY57034CM JANSR2N7483T3 60V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHY57034CM 100K Rads (Si) 0.04Ω ID QPL Part Number 18A* JANSR2N7483T3

Contextual Info: PD - 93824C IRHY57030CM JANSR2N7482T3 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 5 Product Summary TECHNOLOGY ™ Part Number Radiation Level RDS(on) IRHY57Z30CM 100K Rads (Si) 0.03Ω IRHY53Z30CM 300K Rads (Si) 0.03Ω

Contextual Info: PD-93824E IRHY57Z30CM JANSR2N7482T3 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 5 Product Summary TECHNOLOGY ™ Part Number Radiation Level RDS(on) IRHY57Z30CM 100K Rads (Si) 0.03Ω IRHY53Z30CM 300K Rads (Si) 0.03Ω

IRHY57Z30CM

Abstract: JANSR2N7482T3 IRHF58Z30CM IRHY53Z30CM IRHY54Z30CM
Contextual Info: PD-93824D IRHY57Z30CM JANSR2N7482T3 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 5 Product Summary TECHNOLOGY ™ Part Number Radiation Level RDS(on) IRHY57Z30CM 100K Rads (Si) 0.03Ω IRHY53Z30CM 300K Rads (Si) 0.03Ω

12v 18A DC motor

Contextual Info: PD-93825E IRHY57034CM JANSR2N7483T3 60V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 5 Product Summary TECHNOLOGY ™ Part Number Radiation Level RDS(on) IRHY57034CM 100K Rads (Si) 0.04Ω ID QPL Part Number 18A* JANSR2N7483T3

Contextual Info: PD-93825E IRHY57034CM JANSR2N7483T3 60V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 5 Product Summary TECHNOLOGY ™ Part Number Radiation Level RDS(on) IRHY57034CM 100K Rads (Si) 0.04Ω ID QPL Part Number 18A* JANSR2N7483T3

IRHF58Z30CM

Abstract: IRHY53Z30CM IRHY54Z30CM IRHY57Z30CM JANSR2N7482T3
Contextual Info: PD-93824E IRHY57Z30CM JANSR2N7482T3 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHY57Z30CM 100K Rads (Si) 0.03Ω IRHY53Z30CM 300K Rads (Si) 0.03Ω

RG 702 Diode

Abstract: 702 SOT-23 marking 702 MARKING CODE 702 702 marking code RG 702 L2N7002LT1 L2N7002LT1G SOT23-3 702
Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1 N–Channel SOT–23 3 • Pb−Free Package is Available. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR

sot 23 70.2

Abstract: L2N7002LT1G marking 702 sot23 702 sot 23 L2N7002LT1G SOT-23
Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product are Halogen Free and compliance with RoHS requirements. 1 2 • ESD Protected:1000V CASE 318, STYLE 21 SOT– 23 TO–236AB

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G S-L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product are Halogen Free and compliance with RoHS requirements. 1 • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring

702 sot

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product compliance with RoHS requirements. 1 • ESD Protected:1000V 2 CASE 318, STYLE 21 SOT– 23 TO–236AB MAXIMUM RATINGS

SSH6N80

Abstract: SSH3N90 ssh12n80 ssh7n90 SSH11N90 ssh-6n80 SSH8N80 SSH12N70
Contextual Info: FUNCTION GUIDE MOSFETs TO-3P N-CHANNEL Continued Part Number BV dss(V) lD(on)(A) RDS(on){Q) R0jc(K/W) Po(Watt) Page SSH4N70 SSH5N70 SSH6N70 SSH8N70 SSH10N70 SSH12N70 700 4.00 5.00 6.00 8.00 10.00 12.00 3.500 2,500 1.900 1.400 1.200 0.900 0.93 0.83 0.73 0.65

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 3 • Pb−Free Package is Available. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ

702 mosfet

Abstract: code 702 MARKING CODE 702 702 TRANSISTOR sot-23 702 sot 23 RG 702 Diode 2N7002 MARKING 702 marking 702 sot23 SOT23 transistor 702 702 SOT-23
Contextual Info: Central 2N7002 TM Semiconductor Corp. N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

702 sot 23

Abstract: RG 702 Diode 702 mosfet 702 sot-23 2N7002 MARKING 702 SOT23 transistor 702 702 TRANSISTOR sot-23 702 sot 702 transistor sot 23 marking 702 sot23
Contextual Info: 2N7002 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed

702 TRANSISTOR

Abstract: 702 TRANSISTOR sot-23 702 sot 23 sot-23 MARKING CODE 70.2 702 mosfet 2N7002 MARKING 702 RG 702 SOT23 transistor 702 code 702 702 sot-23
Contextual Info: 2N7002 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed