702 MOSFET Search Results

702 mosfet

Abstract: SHD239606 RG 702 Diode
Contextual Info: SENSITRON SEMICONDUCTOR SHD239606 TECHNICAL DATA DATA SHEET 702, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 500 Volt, 0.23 Ohm MOSFET œ Isolated and Hermetically Sealed œ Surface Mount Package MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT

JANSR2N7483T3

Abstract: IRHF58034CM IRHY53034CM IRHY54034CM IRHY57034CM
Contextual Info: PD - 93825D IRHY57034CM JANSR2N7483T3 60V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHY57034CM 100K Rads (Si) 0.04Ω ID QPL Part Number 18A* JANSR2N7483T3

IRHF58Z30CM

Abstract: IRHY53Z30CM IRHY54Z30CM IRHY57Z30CM JANSR2N7482T3
Contextual Info: PD-93824E IRHY57Z30CM JANSR2N7482T3 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHY57Z30CM 100K Rads (Si) 0.03Ω IRHY53Z30CM 300K Rads (Si) 0.03Ω

AA115 diode

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1 N–Channel SOT–23 3 • Pb−Free Package is Available. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR

sot 23 70.2

Abstract: L2N7002LT1G marking 702 sot23 702 sot 23 L2N7002LT1G SOT-23
Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product are Halogen Free and compliance with RoHS requirements. 1 2 • ESD Protected:1000V CASE 318, STYLE 21 SOT– 23 TO–236AB

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G S-L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product are Halogen Free and compliance with RoHS requirements. 1 • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring

702 sot

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product compliance with RoHS requirements. 1 • ESD Protected:1000V 2 CASE 318, STYLE 21 SOT– 23 TO–236AB MAXIMUM RATINGS

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 3 • Pb−Free Package is Available. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ

702 mosfet

Abstract: code 702 MARKING CODE 702 702 TRANSISTOR sot-23 702 sot 23 RG 702 Diode 2N7002 MARKING 702 marking 702 sot23 SOT23 transistor 702 702 SOT-23
Contextual Info: Central 2N7002 TM Semiconductor Corp. N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

702 sot 23

Abstract: RG 702 Diode 702 mosfet 702 sot-23 2N7002 MARKING 702 SOT23 transistor 702 702 TRANSISTOR sot-23 702 sot 702 transistor sot 23 marking 702 sot23
Contextual Info: 2N7002 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed

702 TRANSISTOR

Abstract: 702 TRANSISTOR sot-23 702 sot 23 sot-23 MARKING CODE 70.2 702 mosfet 2N7002 MARKING 702 RG 702 SOT23 transistor 702 code 702 702 sot-23
Contextual Info: 2N7002 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed

SOT23 transistor 702

Abstract: 702 mosfet 702 surface mount transistor
Contextual Info: 2N7002 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed

S2N7002

Abstract: 702 mosfet
Contextual Info: S2N7002 115 mA, 60 V, RDS ON = 7.5 Ω Elektronische Bauelemente N-Ch Small Signal MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 A FEATURES L 3 Pb-Free Package is Available 3 PACKAGING INFORMATION 1 1 K 2 E 2 Drain

Contextual Info: 2N7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60 Vdc Drain−Gate Voltage RGS = 1.0 MW VDGR 60 Vdc ID ID

L2N7002DW

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps,60 Volts L2N7002DW1T1G S-L2N7002DW1T1G N–Channel SC-88 • We declare that the material of product are Halogen Free and compliance with RoHS requirements. • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring

TRANSISTOR SMD MARKING CODE 702

Abstract: 702 TRANSISTOR smd 702 TRANSISTOR smd SOT23 TRANSISTOR SMD 702 N 702 y smd TRANSISTOR 702 N smd transistor SMD transistor marking 702 702 transistor smd code 702 L TRANSISTOR smd 70.2 TRANSISTOR smd
Contextual Info: Central S e m ic o n d u c to r C o rp . NEW PRODUCT ANNOUNCEMENT 2N7002 SMD Power MOSFET % SOT-23 Case DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process. This device can be utilized in the computer, telecommunications

2V7002LT1G

Contextual Info: 2N7002L, 2V7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • 2V Prefix for Automotive and Other Applications Requiring Site and • • • Change Controls AEC Qualified − 2V7002L PPAP Capable − 2V7002L These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

2N7002L

Abstract: 2N7002LT3G 2N7002LT1G 2N7002LT3H
Contextual Info: 2N7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • AEC Qualified • PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60

702 mosfet smd marking

Contextual Info: MOSFET SMD Type N-Channel Enhancement Mode MOSFET 2N7002T SOT-523 Unit: mm +0.1 1.6-0.1 • Features +0.1 -0.1 1.0 +0.05 0.2-0.05 +0.01 0.1-0.01 1 +0.15 1.6-0.15 +0.05 0.8-0.05 2 ● Low Gate Threshold Voltage 0.55 ● Low On-Resistance ● Low Input Capacitance

Contextual Info: MOSFET SMD Type N-Channel Enhancement Mode MOSFET 2N7002W • Features SOT-323 Unit:mm 1.3±0.1 ● Low On-Resistance 2 2.3±0.15 ● Low Input Capacitance 1.25±0.1 1 0.525 0.65 ● Low Gate Threshold Voltage ● Fast Switching Speed 0.36 3 ● Low Input/Output Leakage

Contextual Info: Transistors IC MOSFET SMD Type Product specification 2N7002T SOT-523 Unit: mm +0.1 1.6-0.1 • Features +0.1 -0.1 1.0 +0.05 0.2-0.05 +0.01 0.1-0.01 1 +0.15 1.6-0.15 +0.05 0.8-0.05 2 ● Low Gate Threshold Voltage 0.55 ● Low On-Resistance ● Low Input Capacitance

Contextual Info: MOSFET IC DIP Type SMD Type Type Product specification 2N7002 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Voltage controlled small signal switch 0.4 3 High density cell design for low RDS ON 1 High saturation current capability

2n7000 smd

Contextual Info: MOSFET SMD Type N-Channel Enhancement Mode MOSFET 2N7000 SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● High density cell design for low RDS ON +0.1 1.3-0.1 +0.1 2.4-0.1 ● Voltage controlled small signal switch 0.4 3 1 ● High saturation current capability