700V 4A MOSFET Search Results

4N70F

Contextual Info: HY4N70T / HY4N70FT 700V / 4A N-Channel Enhancement Mode MOSFET 700V, RDS ON =2.8W@VGS=10V, ID=2A Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current

Contextual Info: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY4N70D / HY4N70M 700V / 4A N-Channel Enhancement Mode MOSFET 700V, RDS(ON)=2.8W@VGS=10V, ID=2A

Contextual Info: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY4N70D / HY4N70M 700V / 4A N-Channel Enhancement Mode MOSFET 700V, RDS(ON)=2.8W@VGS=10V, ID=2A

Contextual Info: AP04N60H-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test BVDSS 700V ▼ Fast Switching Characteristic RDS ON 2.8Ω ▼ Simple Drive Requirement ID D 4A G ▼ RoHS Compliant & Halogen-Free

GE04N70B

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/01/04 REVISED DATE : GE04N70B BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 650/700V 2.4 4A Description The GE04N70B series are specially designed as main switching devices for universal 90~265VAC off-line

Contextual Info: AP04N60S-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 700V RDS ON 2.8Ω ID 4A G ▼ RoHS Compliant & Halogen-Free

Contextual Info: AP04N60S-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test BVDSS 700V ▼ Fast Switching Characteristic RDS ON 2.8Ω ▼ Simple Drive Requirement ID D 4A G ▼ RoHS Compliant & Halogen-Free

AP04N60

Contextual Info: AP04N60H-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 700V RDS ON 2.8Ω ID 4A G ▼ RoHS Compliant & Halogen-Free

Contextual Info: AP04N70BI-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test BVDSS 700V Fast Switching Characteristic RDS ON 2.4 Simple Drive Requirement ID 4A RoHS Compliant & Halogen-Free Description Advanced Power MOSFETs from APEC provide the

04n70bf

Abstract: 04N70BF-H SSM04N70BGF-H 04N70 Transistor 04N70BF 04n70b marking code C2 diode marking codes transistors SSs SSM04 ssm04n70bgfh
Contextual Info: SSM04N70BGF-H N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS 700V R DS ON 2.4Ω ID 4A DESCRIPTION The SSM04N70BGF-H achieves fast switching performance with low gate charge without a complex drive circuit. It is suitable for high voltage applications such as AC/DC

Contextual Info: AP04N70BS-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test BVDSS 700V Fast Switching Characteristic RDS ON 2.4 Simple Drive Requirement ID 4A RoHS Compliant & Halogen-Free Description AP04N70 series are specially designed as main switching devices for

AP04N70BI-H

Contextual Info: AP04N70BI-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 700V RDS ON 2.4Ω ID G 4A S Description Advanced Power MOSFETs from APEC provide the

04n70bi

Abstract: 04N70B 04N70 TO220CFM AP04N70BI-H TO-220CFM
Contextual Info: AP04N70BI-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 700V RDS ON 2.4Ω ID G 4A S Description AP04N70 series are specially designed as main switching devices for

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N70-R Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N70K-MK Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70K-MK is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N70-S Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70-S is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged

AP04N70BF

Abstract: AP04N70BF-H
Contextual Info: AP04N70BF-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BV DSS 700V RDS ON 2.4Ω ID G 4A S Description AP04N70 series are specially designed as main switching devices for

AP04N70BP

Contextual Info: AP04N70BP Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Dynamic dv/dt Rating BVDSS D ▼ Repetitive Avalanche Rated RDS ON ▼ Fast Switching ID G ▼ Simple Drive Requirement 600/650/700V 2.4Ω 4A S Description AP04N70 series are specially designed as main switching devices for

04N70BP

Contextual Info: Advanced Power Electronics Corp. AP04N70BP-H-HF-3 N-channel Enhancement-mode Power MOSFET 100% Avalanche-Tested D Simple Drive Requirement Fast Switching Performance G RoHS-compliant, halogen-free BV DSS 700V R DS ON 2.4Ω ID 4A S Description Advanced Power MOSFETs from APEC provide the designer with the best

04n70bi

Contextual Info: Advanced Power Electronics Corp. AP04N70BI-H-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D 100% Avalanche Tested Fast Switching Performance G RoHS-compliant, halogen-free BV DSS 700V R DS ON 2.4Ω ID 4A S Description Advanced Power MOSFETs from APEC provide the designer with the best

Contextual Info: ICE4N70 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 4A Max V BR DSS ID = 250uA 700V Min rDS(ON) VGS = 10V 1.0Ω Typ Qg VDS = 480V 21nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: Advanced Power Electronics Corp. AP04N70BS-H-HF-3 N-channel Enhancement-mode Power MOSFET 100% Avalanche-Tested D Simple Drive Requirement Fast Switching Performance G RoHS-compliant, halogen-free BV DSS 700V R DS ON 2.4Ω ID 4A S Description Advanced Power MOSFETs from APEC provide the designer with the best

Contextual Info: ICE4N70FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 4A Max V BR DSS ID = 250uA 700V Min rDS(ON) VGS = 10V 1.0Ω Typ Qg VDS = 480V 21nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: SSM04N70BP,R N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge D Simple drive requirement Fast switching BV DSS 600/650/700V R DS ON 2.4Ω 4A ID G S Description The SSM04N70BR is in a TO-262 package, which is widely used for G D commercial and industrial applications, and is well suited for universal