700V 10A MOSFET Search Results

p channel mosfet 10a 20v

Contextual Info: MITSUBISHI Neh POWER MOSFET j FS10SM-14A ! HIGH-SPEED SWITCHING USE FS10SM-14A • VOSS . 700V • ros O N (M A X ) . 1.3Q • Id . 10A

PN channel MOSFET 10A

Contextual Info: MITSUBISHI Neh POWER MOSFET FS1OVS-14A HIGH-SPEED SWITCHING USE FS1 OVS-14A OUTLINE DRAWING I q J w e Q w r o- V d s s . 700V Id . 10A

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N70K Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N70K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.

Contextual Info: AOT10T60P/AOB10T60P/AOTF10T60P 600V,10A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM

Contextual Info: AOW10T60P/AOWF10T60P 600V,10A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM 40A RDS(ON),max

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N70Z Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N70Z is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a

10N65

Abstract: MOSFET 700V 10A MTN10N65FP mtn10n65
Contextual Info: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN10N65FP Spec. No. : C725FP Issued Date : 2009.06.15 Revised Date : Page No. : 1/9 BVDSS : 700V @Tj=150℃ RDS ON : 0.75Ω ID : 10A Description The MTN10N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best

10N70

Abstract: MOSFET 700V 10A 10N70L mosfet 350v 10A 700v 10A mosfet 10N70L-TF1-T 700V mosfet driver
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N70 Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N70-C Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N70-C is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N70 Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary 10N70Z-Q Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N70Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a

Contextual Info: 10N70 UNISONIC TECHNOLOGIES CO., LTD Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET 1  DESCRIPTION TO-220F The UTC 10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N70-Q Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET 1  DESCRIPTION TO-220F The UTC 10N70-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a

Contextual Info: TSM8N70 700V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)( )(max) ID (A) 700 0.9 @ VGS =10V 8 General Description The TSM8N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

diode b10

Abstract: MOSFET 700V 10A TSM8N70 700v 4A mosfet 700v 10A mosfet MOSFET 700V 4A
Contextual Info: TSM8N70 700V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 700 0.9 @ VGS =10V 4.6 General Description The TSM8N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

MOSFET 700V 10A

Abstract: MOSFET 700V TO 220 TSM8N70CI MOSFET 700V 4A ITO-220 700v 4A mosfet 700v 10A mosfet
Contextual Info: TSM8N70 700V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 700 0.85 @ VGS =10V 4.6 General Description The TSM8N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

2SK3673-01MR equivalent

Abstract: 2SK3673-01MR 2SK3673 MOSFET 700V 10A MOSFET 700V 4A mosfet 350v 10A 700v 10A mosfet
Contextual Info: 2SK3673-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators

2SK3673-01MR equivalent

Abstract: MOSFET 700V 10A 2SK3673
Contextual Info: 2SK3673-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators

DIODE S3c

Abstract: ssm10n70
Contextual Info: SAMSUNG SEM ICO NDUCTOR INC *- SSM10N70 SSH10N70 >.U DE I T T t m M S □□OSB'it. □ W ~ N-CHANNEL * - • r * POWER MOSFETS V - ^ - IS t' Preliminary Specifications PRODUCT SUMMARY 700 Volt, i.a O h m SFET Part Number Vos Rosion Id SSM10N70 700V 1.00

IXTK20N140

Contextual Info: Advance Technical Information IXTK20N140 IXTX20N140 High Voltage Power MOSFETs w/ Extended FBSOA VDSS ID25 = 1400V = 20A Ω < 1Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS

MOSFET 700V 10A

Abstract: 700v 5A mosfet FS10SM-14A
Contextual Info: MITSUBISHI Nch POWER MOSFET FS10SM-14A HIGH-SPEED SWITCHING USE FS10SM-14A OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 700V

FS10UM-14A

Abstract: MOSFET 700V 10A
Contextual Info: MITSUBISHI Nch POWER MOSFET FS10UM-14A HIGH-SPEED SWITCHING USE FS10UM-14A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 r 1.0 3.8MAX. 0.8 2.54 0.5 2.54 2.6 4.5MAX. 12.5MIN. φ 3.6 q w e wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 700V

FS10KM-14A

Abstract: FS10KM14A 5A 700V MOSFET 700v 5A mosfet
Contextual Info: MITSUBISHI Neh POWER MOSFET F S 1 0 K M - 1 4 A HIGH-SPEED SWITCHING USE FS10KM-14A OUTLINE DRAW ING Dimensions in mm 10 ±0.3 2.8 ±0.2 V d s s . 700V rDS ON (MAX) .1.3Í1

700v 5A mosfet

Abstract: MOSFET 700V 10A 200v 5A mosfet computer smps circuit N-Channel MOSFET 200v NTE2972 MOSFET nte2972 5A 700V MOSFET MOSFET 30A 700V
Contextual Info: NTE2972 MOSFET N–Channel, Enhancement Mode High Speed Switch Applications: D SMPS D DC–DC Converter D Battery Charger D Power Supply of Printer D Copier D HDD, FDD, TV, VCR D Personal Computer Absolute Maximum Ratings: TC = +25°C unless otherwise specified