7.1 CHANNEL Search Results

Contextual Info: Technical Data Sheet BTS Master High Performance Handheld Base Station Analyzer MT8221B MT8222B 400 MHz to 4.0 GHz 150 kHz to 7.1 GHz 10 MHz to 7.1 GHz 400 MHz to 6.0 GHz 150 kHz to 7.1 GHz 10 MHz to 7.1 GHz Cable and Antenna Analyzer Spectrum Analyzer

MGFC39V7177A

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7177A 7.1 ~ 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic

MGFC36V7177A

Abstract: fet 30 f 124
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MG FC36V7177 A « 8fnel f 7.1 -7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V7177A is an internally impedance-matched Unit : millimeters (inches) GaAs power FET especially designed for use in 7.1~7.7GHz

MGFC36V7177A

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V7177A 7.1 ~ 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic

MGFC36V7177A

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V7177A 7.1 ~ 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic

MGFC39V7177A

Abstract: 71F71
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7177A 7.1 ~ 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic

FMM5057VF

Abstract: 7.1 power amplifier circuit diagram fujitsu power amplifier GHz Fujitsu Quantum Devices
Contextual Info: FMM5057VF 7.1-8.5GHz Power Amplifier MMIC FEATURES ・High Output Power: 34.0dBm typ. ・High Linear Gain: 26.0dB(typ.) ・Low VSWR ・Broad Band: 7.1～8.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The FMM5057VF is a MMIC amplifier that contains a four-stage

MGFC41V7177

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V7177 7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+ /-0.3 R1.25 (1) 0.6+/-0.15 2 MIN The MGFC41V7177 is an internally impedence matched GaAs power FET especially designed for use in 7.1 - 7.7

Contextual Info: FMM5057VF 7.1-8.5GHz Power Amplifier MMIC FEATURES ・High Output Power: 34.0dBm typ. ・High Linear Gain: 26.0dB(typ.) ・Low VSWR ・Broad Band: 7.1～8.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The FMM5057VF is a MMIC amplifier that contains a four-stage

LDB 107

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM7179-4 TECHNICAL DATA m FEATURES: • HIGH POWER PldB = 36.0 dBm at 7.1 GHz to 7.9 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GidB = 6*5 dB at 7.1 GHz to 7.9 GHz ■ HERMETICALLY SEALED PACKAGE

7.1 amplifier circuit diagram

Abstract: 7.1 power amplifier circuit diagram
Contextual Info: EIM7179-4 7.1 – 7.9 GHz Multi-Stage Power Amplifier UPDATED 11/02/2007 FEATURES • • • • • 7.1– 7.9GHz Operating Frequency Range 35.5dBm Output Power at 1dB Compression 33.0 dB Typical Power Gain @1dB gain compression -45dBc Typical OIM3@ each tone Pout 23.5dBm

TIM7179-16

Contextual Info: TOSHIBA TIM7179-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High gain - G1dB = 5.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally matched • Hermetically sealed package

TIM7179-8

Contextual Info: TOSHIBA TIM7179-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 7.1 GHz to 7.9 GHz • High gain - G1dB = 6.0 dB at 7.1 GHz to 7.9 GHz • Broad band internally matched • Hermetically sealed package

5951

Abstract: 6605 EIC6472-4 EIC7177-4 amplifier TRANSISTOR 12 GHZ
Contextual Info: EIC7177-4 7.1-7.7 GHz 4-Watt Internally-Matched Power FET FEATURES • • • • • • • • 7.1 – 7.7 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 9.0 dB Power Gain at 1dB Compression 35% Power Added Efficiency

eim7185-4

Contextual Info: EIM7185-4 7.1 – 8.5 GHz Multi-Stage Power Amplifier ISSUE DATE: 02/20/2008 FEATURES • • • • • 7.1– 8.5GHz Operating Frequency Range 35.5dBm Output Power at 1dB Compression 33.0 dB Typical Power Gain @1dB gain compression -45dBc Typical OIM3@ each tone Pout 23.5dBm

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-30L Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 34.5 dBm, - Single carrier level • High power - P-idB = 44.5 dBm at 7.1 GHz to 7.9 GHz • High gain • G-idB = 6.5 dB at 7.1 GHz to 7.9 GHz

vp of 4392

Abstract: 4327 EIC7177-5 OPT01 7177
Contextual Info: EIC7177-5 7.1-7.7 GHz 5-Watt Internally-Matched Power FET FEATURES • • • • • • • • 7.1 – 7.7 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 9 dB Power Gain at 1dB Compression 35% Power Added Efficiency

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 6.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 5.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-8 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 6.0 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package

Contextual Info: TOSHIBA MICROWAVE S E M IC O N D U C T O R TECHNICAL DATA FEATURES: • HIGH POWER PldB = 39 dBm at 7.1 GHz to 7.9 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GldB = 6.0 dB at 7.1 GHz to 7.9 GHz ■ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta = 25°C

IM335

Contextual Info: MITSUBISHI SEMICONDUCTOR \GaAs FET/ MGFC36V7177A 7.1-7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N The M G FC 36V7177A is an internally O U T L IN E D R A W IN G impedance-matched GaAs power FET especially designed fo r use in 7.1 ~ 7.7G H z

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

ddr2 sdram inteface to fpga for image processing

Abstract: QII54001-7 QII54003-7 QII54004-7 QII54005-7 QII54006-7 QII54007-7 QII54017-7 QII54019-7 QII54020-7
Contextual Info: Quartus II Version 7.1 Handbook Volume 4: SOPC Builder Preliminary Information 101 Innovation Drive San Jose, CA 95134 www.altera.com QII5V4-7.1 Copyright 2007 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other words and logos that are identified as trademarks and/or service marks are, unless noted otherwise, the trademarks and