6S08 Search Results

2SC144

Abstract: 2SD466 2sc5266
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Contextual Info: Order this document by 6S084M3C/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 6S084M3C 2 x 1M x 8 2 x 1M x 8 Synchronous Dynamic RAM The 6S084M3C is a CMOS synchronous dynamic random access memory organized as 2 banks x 1,048,576 words x 8 bits with LVTTL interface. Fully synchronous operations are referenced to the

6S08

Abstract: 74S139 74S175 am25s08 Am25S07/Am25S08
Contextual Info: Am25S07 / Am25S08 Am 25S07/Am 25S08 H ex/Q uad Parallel D Registers with Register Enable DISTINCTIVE CHARACTERISTICS • • • 4-bit and 6-bit high-speed parallel registers Common clock and com m on enable Positive edge triggered D flip-flops GENERAL DESCRIPTION

6S08

Abstract: 74S139 74S175
Contextual Info: Am25S07 / Am25S08 Am 25S07/Am 25S08 H ex/Q uad Parallel D Registers with Register Enable DISTINCTIVE CHARACTERISTICS • • • 4-bit and 6-bit high-speed parallel registers Common clock and com m on enable Positive edge triggered D flip-flops GENERAL DESCRIPTION

334C

Contextual Info: 'PUBLISHED. D E EC 0010-1/ 91-95 REV PER EC 0512- HCU5IKG MATERIAL: GLASS-FILLED POLYESTER. CONTACT MATERIAL: PHOSPHOR BRONZE. CONIACI AREA. NICKE_ > LOGO IN THIS POINT OF KEASCREMENT FOR GOLD. AREA. CONTACT AREA. NICKE_ : [ 3 . 3 4 C ; :» s] P U J □ □

Contextual Info: Order this document by MC16S044T3B/D SEMICONDUCTOR -TECHNICAL DATA 2 X 2M X 4 MC16S044T3B Product Previe 16M Synchronous DRAM Fam ily x 4 , x 8 2 x 1M x 8 6S084T3B