6R520P Search Results

6R520P

Abstract: IPA60R520CP JESD22 mosfet d38
Contextual Info: IPA60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

6r520

Contextual Info: IPA60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V 24 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

Contextual Info: IPB60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V 24 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

6R520P

Abstract: IPP60R520CP JESD22 PG-TO220-3
Contextual Info: IPP60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

Contextual Info: IPP60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V 24 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

IPA60R520CP

Contextual Info: IPA60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

Contextual Info: IPP60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

6R520P

Abstract: IPD60R520CP JESD22 smd transistor ISS d38 marking transistor SMD TRANSISTOR MARKING Dd
Contextual Info: IPD60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

IPI60R520CP

Abstract: JESD22 6R520P
Contextual Info: IPI60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

IPB60R520CP

Abstract: JESD22 SMD TRANSISTOR MARKING Dd 6R520P
Contextual Info: IPB60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications