6PIN HWSON Search Results

flanges

Abstract: hwson 6pin
Contextual Info: 6PIN HWSON 4521 φ1 A B C φ2 TYPE CLASS label W UNIT: mm ITEM SYMBOL SIZE Diameter A φ 180 + −3 Space Between Flanges W 13 ± 0.5 Outer Diameter B φ 60±1 Flange Hub Marking Slit Location θ1 90º Spindle Diameter C φ 13±0.5 Key Slit Location θ2

SC-75

Abstract: SC-76 SC-78 SC-89 MP-25ZK TO-252 MP-3ZK SC-95 D18025EJ2V0IF00
Contextual Info: Information TAPING SPECIFICATIONS OF SURFACEMOUNTED DISCRETE DEVICES Document No. D18025EJ2V0IF00 2nd edition Date Published July 2006 N CP(K) 2006 • The information in this document is current as of June, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or

smd code marking NEC

Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
Contextual Info: Power Management Devices Selection Guide > Power MOSFETs > ESD Protection Diodes > Regulators August 2008 www.am.necel.com/powermanagement TABLE OF CONTENTS Contents Low-Voltage Power By Part

D1802

Abstract: MP-25Z TO-252 MP-3ZK mini mold transistor 25 sc 88a 504 SC-75 SC-76 SC-78 SC-89 MP-25ZP
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

MPA2733GR

Abstract: MPA2733 2sk4075 MOSFET 8PIN nec power mosfet bare die np 2SK4213 mpa602t 2SJ647M 2SKxxxx NP100P04PDG
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

2SC5664

Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326
Contextual Info: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation

d1833

Abstract: 6pin hwson D18337JJ1V0AN001 hwson 6pin D18337JJ1V0AN nec mosfet
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

smd transistor marking 12W

Abstract: SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103
Contextual Info: RF Devices Jun.2006 Hyper Device Business Unit, Semiconductor Company SANYO Electric Co.,Ltd. New Products High High Gain，Low Gain，Low Noise Noise SiRF–Bipolar Transistor MCH4009 •Packege : MCPH4 ■Features High Gain・・・|S21e|2=17dB＠2GHz 0.3

PA2451

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2451 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION 0.5±0.1 6 2 5 3 4 0.25 +0.1 −0.05 1 1.85±0.1 PACKAGE DRAWING Unit : mm The µPA2451 is a switching device which can be driven directly by a 2.5 V power source.

pa2450

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2450 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 6 2 5 3 4 FEATURES • 2.5 V drive avaliable • Low on-state resistance RDS on 1 = 17.5 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)2 = 18.5 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A)

sot1353

Abstract: SOT135
Contextual Info: PCT2075 I2C-bus Fm+, 1 degree C accuracy, digital temperature sensor and thermal watchdog Rev. 2 — 6 May 2013 Product data sheet 1. General description The PCT2075 is a temperature-to-digital converter featuring 1 C accuracy over 25 C to +100 C range. It uses an on-chip band gap temperature sensor and Sigma-Delta

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2450C N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 6 2 5 3 4 2.0±0.1 1 0.25 +0.1 -0.05 0.5±0.1 0.5±0.1 The μ PA2450C is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2450C features a low on-state resistance and excellent

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2451B N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 6 2 5 3 4 2.0±0.1 0.5±0.1 0.5±0.1 1 0.25 +0.1 -0.05 The µ PA2451B is a switching device, which can be driven directly by a 2.5 V power source. The µ PA2451B features a low on-state resistance and

PA2451CTL-E1-A

Abstract: PA2451CTL
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2451C N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 6 2 5 3 4 2.0±0.1 1 0.25 +0.1 -0.05 0.5±0.1 0.5±0.1 The μ PA2451C is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2451C features a low on-state resistance and excellent

pa2450b

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2450B N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 6 2 5 3 4 2.0±0.1 0.5±0.1 0.5±0.1 1 0.25 +0.1 -0.05 The µ PA2450B is a switching device, which can be driven directly by a 2.5 V power source. The µ PA2450B features a low on-state resistance and

U6000

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2452 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 6 2 5 3 4 2.0±0.1 0.5±0.1 0.5±0.1 excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.

PA2451

Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA2451 N チャネル パワーMOS FET スイッチング用 µPA2451 は，2.5 V 電源系による直接駆動が可能なスイッチング素子 外形図（単位: mm）

PA2450

Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA2450 N チャネル パワーMOS FET スイッチング用 µPA2450 は，2.5 V 電源系による直接駆動が可能なスイッチング素子 外形図（単位: mm）

PA2451

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

pa2450

Abstract: G156
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: PCT2075 I2C-bus Fm+, 1 degree C accuracy, digital temperature sensor and thermal watchdog Rev. 7 — 6 March 2014 Product data sheet 1. General description The PCT2075 is a temperature-to-digital converter featuring 1 C accuracy over 25 C to +100 C range. It uses an on-chip band gap temperature sensor and Sigma-Delta

Contextual Info: PCT2075 I2C-bus Fm+, 1 degree C accuracy, digital temperature sensor and thermal watchdog Rev. 8 — 25 September 2014 Product data sheet 1. General description The PCT2075 is a temperature-to-digital converter featuring 1 C accuracy over 25 C

Contextual Info: PCT2075 I2C-bus Fm+, 1 degree C accuracy, digital temperature sensor and thermal watchdog Rev. 4 — 19 July 2013 Product data sheet 1. General description The PCT2075 is a temperature-to-digital converter featuring 1 C accuracy over 25 C to +100 C range. It uses an on-chip band gap temperature sensor and Sigma-Delta

P2075

Abstract: nxp pct2075 smd 3F7
Contextual Info: PCT2075 I2C-bus Fm+, 1 degree C accuracy, digital temperature sensor and thermal watchdog Rev. 3 — 21 May 2013 Product data sheet 1. General description The PCT2075 is a temperature-to-digital converter featuring 1 C accuracy over 25 C to +100 C range. It uses an on-chip band gap temperature sensor and Sigma-Delta