6M80 Search Results

6M80

Abstract: M6M80041
Contextual Info: MITSUBISHI LSIs M 6M 80041P, FP 4096-BIT 256-WORD BY 16-BIT _ ELECTRICALLY ERASABLE AND PROGRAMMABLE ROM DESCRIPTION The M 6M80041P, FP are 4096-bit (256-word x 16-bit) elec­ tric a lly erasable CMOS EEPROMs, and all have a bu ilt-in

Contextual Info: R EV DESCRIPTION DATE D ES IG N ED A 1.25. 0. 6 1 Connec to r o u t 1 i ne li ill , , lll ¡1 ¿1 di ili li X . i : 4 -N o . I - |fMark 1.35 t o . I Recomaendable 4.05 T H I S DRAWING C O N T A I N S I N F O R M A T I O N T HA T AND S H O U L D N O T BE U S E D W I T H O U T W R I T T E N

Contextual Info: I m b E M T ñH S 0 0 2 3 2 2 0 T73 • M I T I MITSUBISHI LSIs 6M80021P,L,FP 2048-BIT 128-WORD BY 16-BIT ELECTRICALLY ERASABLE AND PROGRAMMABLE ROM DESCRIPTION The M 6 M 8 0 0 2 1 P, L, FP are 2 0 4 8 -b it (1 2 8 -w o rd x 1 6 bit) electrically erasable CMOS EEPROMs, and all have a

Contextual Info: MITSUBISHI LSIs M 6M 80021P,L,FP 204 8-B IT 128 -WORD B Y 16-BIT ELECTRICALLY ERASABLE AND PROGRAM M ABLE ROM D ESCRIPTIO N The M 6M 80 02 1P, L, FP are 2048-bit (128-word x 16bit) electrically erasable C M O S EEPR O M s, and all have a built-in high voltage generator to enable operation in all

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

MC0402

Abstract: MC00625W040211M MC00625 Thick Film Chip Resistor 0402
Contextual Info: Thick Film Chip Resistor 0402 Features • Small size and light weight • Suitable for both wave and reflow soldering • Reduction of assembly costs Performance Specification Temperature Coefficient : 1Ω to 10Ω ±400PPM/°C 11Ω to 100Ω ±200PPM/°C

resistor

Abstract: 1m15
Contextual Info: Thick Film Chip Resistor 1206 Features • Small size and light weight • Suitable for both wave and reflow soldering • Reduction of assembly costs Performance Specification Temperature Coefficient : 1Ω to 10Ω ±400PPM/°C 11Ω to 100Ω ±200PPM/°C

resistor

Abstract: mc0.1w0805 3r3
Contextual Info: Thick Film Chip Resistor 1206 Features • Small size and light weight • Suitable for both wave and reflow soldering • Reduction of assembly costs Performance Specification Temperature Coefficient : 1Ω to 10Ω ±400PPM/°C 11Ω to 100Ω ±200PPM/°C

M6M80021P

Abstract: M6M80021 M6M80021FP M6M80021L BE4C1B
Contextual Info: MITSUBISHI LSIs M 6 M 8 0 0 2 1 P , L , F P 2048-B ITC128-WORD BY 16-BIT ELECTRICALLY ERASABLE AND PROGRAMM ABLE ROM D E S C R IP T IO N The M 6 M 8 0 0 2 1 P , L, F P are 2048-bit 128-word x 16bit) electrically erasable C M O S E E P R O M s , and all have a

M6M800X1

Abstract: S-29453A
Contextual Info: Contents Features . 1 . 1 Block D ia g ra m . 2 Instruction Set . 2 Absolute Maximum Ratings . 2 Recommended Operating Conditions

MC0.063W06031

Abstract: resistor HI-POT+b-5+0805
Contextual Info: 0805 Thick Film Chip Resistor Ratings: Type 0805 Power Rating 0.10W 1/10W Max. Working Voltage 150V Max. Overload Voltage 300V Temperature Range -55°C to +155°C Ambient Temperature 70°C Resistance Range 1Ω to 10MΩ Power Rating: Resistors shall have a power rating based on continuous load operation at an ambient temperature of 70°C. For temperature

MITSUBISHI electr

Contextual Info: MITSUBISHI LSIs M 6 M 8 0 0 2 Í P 'L 'F P 2 0 4 8 -B IT 1 2 8 -WORD B Y 16-BIT ELECTR ICA LLY ERA SA B LE AND PROGRAMMABLE ROM D E S C R IP T IO N The M 6 M 8 0 0 2 1 P , L, FP are 2 0 4 8 -b it (1 2 8 -w o rd x 16bit) electrically erasable C M O S E E P R O M s, and all have a

Contextual Info: MITSUBISHI LSIs 6M8001ÍA P , L 1024-BIT 64-W 0R D BY 16-BIT ELECTRICALLY ERASABLE AND PROGRAMM ABLE ROM DESCRIPTION The M 6M 80011AP, L are 1024-bit (64-word x 16-bit) electrically erasable CMOS EEPROMs, and all have a b u iltin high voltage generator to enable operation in all modes