transistor 6bw
Abstract: 3BW 02 R047 ERJ6BQ code 6BW ERJ6R ERJ8BW
Contextual Info: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ BW : 0402, 0603, 0805, 1206 ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2512 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2BW, 3BW, 6BW, 8BW
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transistor 6bw3bw 02r047erj6bq+3code 6bwerj6rerj8bw
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ERJ8BW
Contextual Info: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 ERJ BW, CW : 0402, 0603, 0805, 1206 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3B, 6B, 8B, 14B, 3R,
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RC2144
Abstract: ERJ8BW
Contextual Info: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 ERJ BW : 0402, 0603, 0805, 1206 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3B, 6B, 8B, 14B, 3R,
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ERJ6RQ
Abstract: ERJ8BW
Contextual Info: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 ERJ BW, CW : 0402, 0603, 0805, 1206 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3B, 6B, 8B, 14B, 3R,
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transistor 6bw
Abstract: 6BW 16 6BW 79 ERJ3BW 6BW 80 code 6BW 6bw 43 transistor 3bw transistor l1w R047
Contextual Info: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 ERJ BW : 0402, 0603, 0805, 1206 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3B, 6B, 8B, 14B, 3R,
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transistor 6bw6bw 166bw 79erj3bw+66bw 80code 6bw6bw 43transistor 3bwtransistor l1wr047
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ERJ6RQ
Abstract: ERJ8BW
Contextual Info: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 ERJ BW, CW : 0402, 0603, 0805, 1206 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3B, 6B, 8B, 14B, 3R,
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ERJ8BW
Contextual Info: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 ERJ BW, CW : 0402, 0603, 0805, 1206 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3B, 6B, 8B, 14B, 3R,
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6BW 16
Abstract: 6bw 12 6BW 79 code 6BW 6BW 33 6BW 11 ERJ6RQ ERJ8BW
Contextual Info: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 ERJ BW, CW : 0402, 0603, 0805, 1206 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3B, 6B, 8B, 14B, 3R,
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val506bw 166bw 126bw 79+5code 6bw6bw 336bw 11erj6rqerj8bw
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3BW 18
Abstract: 6bw 01 ERJ6RQ
Contextual Info: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 ERJ BW, CW : 0402, 0603, 0805, 1206 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3B, 6B, 8B, 14B, 3R,
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3bw 186bw 01erj6rq |
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ERJ6RQ
Abstract: ERJ8BW
Contextual Info: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 ERJ BW, CW : 0402, 0603, 0805, 1206 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3B, 6B, 8B, 14B, 3R,
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6bw 95
Abstract: TR 6BW 01 IC 7915
Contextual Info: V N E C ELECTRONI CS 6427525 N E C I NC 01 ELECTRONICS D E I bM 27 S 2S 00100=13 81C INC NEC NEC Electronics Inc. D e sc rip tio n The //PC356 is a J -F E T input operational amplifier with matched P-channel ion implanted J -F E T s. In addition to the obvious advantages of J -F E T inputs, the juPC356 Is
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upc356//pc356fjpc3566bw 95+2tr 6bw 01ic 7915
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KW555
Abstract: w555 K889
Contextual Info: !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!""#$%&$!' *(+! !"#$!%&'()*$#+,"*)*-".)"'(&*/%#! ! ,-'./012034! ! ! ! ! ! ! )/G9)/%7%)DDE4564)J9:;92);2)=)X;:9XK0?I) )<9:=8;<)<G;R);?I0<3K:)3G=3)<K?QK:82)3K)3G9) ) $"+)23=?I=:I)5P5O)QKK3R:;?3)=?I)I9F;H9:2) !20R9:Y)E)=?I)J#A)R9:QK:8=?<9)X;3G)G;1G)
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marking code 6BW
Abstract: 6BW MARKING 6BG TVS marking 6BN marking 6Cn marking 6ah SMA6J14A 6cg marking code SMA6J12 tvs 6ae
Contextual Info: SMA6J5.0 thru 40A Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AC SMA Cathode Band 0.065 (1.65) Stand-off Voltage 5.0 to 40V Peak Pulse Power 600W 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) t c u rod P New Mounting Pad Layout 0.066 MIN. (1.68 MIN.)
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do-214acmil-std-750marking code 6bw6bw marking+86bg tvsmarking 6bnmarking 6cnmarking 6ahsma6j14a6cg marking codesma6j12tvs 6ae
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6BG marking DIODE
Abstract: diode 6BG
Contextual Info: SMA6J High junction temperature Transil Features • Peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Low clamping voltage versus standard series
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6bw 95
Abstract: 6BG marking DIODE marking code 6BW 6ba diode SMA6J12 marking 6BN 6bg diode 6BW 81 6BW 48 SMA6J15A
Contextual Info: SMA6J High junction temperature Transil Features • Peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Low clamping voltage versus standard series
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do-214ac883g-method6bw 956bg marking diode+8marking code 6bw6ba diodesma6j12marking 6bn6bg diode6bw 816bw 48sma6j15a
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opo7c
Abstract: 0P07C
Contextual Info: ÆL—f r r u i m i TECHNOLOGY _QP-07 Precision Operational Amplifier F€flTUR€S DCSCRIPTIOn • Guaranteed 25^ V max. Offset Voltage ■ Guaranteed 0.6/zV/°C max. Offset Voltage Drift with Temperature ■ Excellent I.O^V/Month max. Long Term Stability
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LDR03
Abstract: d13 -620 gh 6922 EH 14GW8 19BX6 ecc189 ECF80 equivalent BA 6688 L 6dl4 E88CC Telefunken
Contextual Info: TELEFUNKEN Röhren-Vergleichsliste List of comparative types Die in dieser Liste aufgeführten Vergleichstypen sind äquivalent. Eine absolute Identität ist nicht in jedem Fall gegeben, sie sind jedoch so ähnlich zueinander, daß ihre Verwendung für den gleichen Zweck möglich ist. Der Übersichtlichkeit wegen
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e80cfyl1080yl1130cav50+10ldr03d13 -620 gh6922 eh14gw819bx6ecc189ecf80 equivalentba 6688 l6dl4e88cc telefunken
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transistor 6bw
Abstract: 3 PIN 6Bw transistor 6Bw transistor 6bw 12 transistor 6BW MARKING TOP marking 6BW
Contextual Info: r j urm TECHNOLOGY LTC125Q Very Low Noise Zero-Drift Bridge Amplifier FCfflURCS D CSCRIPTIOn • Very Low Noise: 0.75nVp.p Typ, 0.1 Hz to 10Hz ■ DC to 1Hz Noise Lower Than OP-07 ■ Full Output Swing into 1k Load ■ Offset Voltage: 10 iV Max ■ Offset Voltage Drift: 50nV/°C Max
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75nvpop-07110db115db+8ltc125qltc1250transistor 6bw3 pin 6bw transistor6bw transistor6bw 12 transistor6bw markingtop marking 6bw
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Contextual Info: MM Registers - For a summary of all registers refer to the Register Summary section at the end of this chapter. All reserved bits must be written to a zero. NOTE: Control Registers 0x00— DS1/DS2 Output Control Register CR00
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rd5106
Abstract: RD5106A RD6610A RD5107A RD661OA rd5107 RETICON RD510 RD6610ANP011 EGG RETICON
Contextual Info: Advance Information ¿n'^E E zG RETICON RD6610A 2048-Sample CCD Analog Delay Line Description 1 Clock The RD661OA is a 2048-sample analog delay line. It accepts an arbitrary analog voltage signal within certain voltage swing and bandwidth limits and outputs the same signal delayed in time.
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marking code 6BW
Abstract: ERJA1 ERJB2
Contextual Info: 2014 CATALOG Fixed Resistors LQGXVWULDOSDQDVRQLFFRP Fixed Resistors CONTENTS Product Item Type Safety Precautions Common precautions for Fixed Resistors Rectangular Type Surface Mount Resistors Attenuator Power Type 2 Thick Film Chip Resistors
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marking code 6bwerja1erjb2 |
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phono preamplifier circuit diagram
Abstract: D547 "zero-bias schottky diode" ic 741 riaa PA111BM collimator U 1014N riaa preamplifier circuit diagram ST S734 OPA111AM
Contextual Info: H R - B R O W N OPA111 * OPA111 i I R H Q MILITARY & DIE V E R S IO N S A V A IL A B L E Low Noise Precision OPERATIONAL AMPLIFIER APPLICATIONS FEATURES • PRECISION INSTRUMENTATION • LOW NOISE: 100% tasted. B n V /V H z m ix at 10kHz • DATA ACQUISITION
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10khz0pen-l00p120db100db+13opa11130khz0pa111phono preamplifier circuit diagramd547zero-bias schottky diodeic 741 riaapa111bmcollimatoru 1014nriaa preamplifier circuit diagramst s734opa111am
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dd417
Contextual Info: 'd a t a b427525 GÜM17SE ST2 « N E C E NEC sh eet MOS INTEGRATED CIRCUIT f juPD42S4260L, 424260L 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The /¿PD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs with optional fast page mode
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b427525m17sejupd42s4260l424260l+516-bitpd42s4260l/1pd42s4260l//pd424260ldd417
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Solitron J775-2
Abstract: BT196 SS14 TOSHIBA 1n5822 TOSHIBA SS550 BT127 SE140 NSR8140S NBS25-400 1N4007 toshiba
Contextual Info: CROSS REFERENCE INDUSTRIAL R u t No. 10D05 iœ i îœ i 10D2 1 302 im 1004 10D4 10D6 10 6 IO » im 11DQ03 11DQ04 11DQ05 11DQ06 15B4B41 15D4B41 15G4B41 15J4B41 1B4B42 im a im o naco in n o 1G4B42 lHi 117 1BB 1J4B42 1*1217 1*12171 1K1217B 1N1218 1K1218A 1*12188
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10d05rl151g1n4934rl152g+151n4935rl153grl154g1n4936rl155gsolitron j775-2bt196ss14 toshiba1n5822 toshibass550bt127se140nsr8140snbs25-4001n4007 toshiba
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