6BW 01 Search Results

transistor 6bw

Abstract: 3BW 02 R047 ERJ6BQ code 6BW ERJ6R ERJ8BW
Contextual Info: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ BW : 0402, 0603, 0805, 1206 ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2512 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2BW, 3BW, 6BW, 8BW

ERJ8BW

Contextual Info: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 ERJ BW, CW : 0402, 0603, 0805, 1206 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3B, 6B, 8B, 14B, 3R,

RC2144

Abstract: ERJ8BW
Contextual Info: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 ERJ BW : 0402, 0603, 0805, 1206 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3B, 6B, 8B, 14B, 3R,

transistor 6bw

Abstract: 6BW 16 6BW 79 ERJ3BW 6BW 80 code 6BW 6bw 43 transistor 3bw transistor l1w R047
Contextual Info: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 ERJ BW : 0402, 0603, 0805, 1206 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3B, 6B, 8B, 14B, 3R,

ERJ6RQ

Abstract: ERJ8BW
Contextual Info: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 ERJ BW, CW : 0402, 0603, 0805, 1206 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3B, 6B, 8B, 14B, 3R,

ERJ8BW

Contextual Info: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 ERJ BW, CW : 0402, 0603, 0805, 1206 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3B, 6B, 8B, 14B, 3R,

6BW 16

Abstract: 6bw 12 6BW 79 code 6BW 6BW 33 6BW 11 ERJ6RQ ERJ8BW
Contextual Info: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 ERJ BW, CW : 0402, 0603, 0805, 1206 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3B, 6B, 8B, 14B, 3R,

3BW 18

Abstract: 6bw 01 ERJ6RQ
Contextual Info: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 ERJ BW, CW : 0402, 0603, 0805, 1206 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3B, 6B, 8B, 14B, 3R,

ERJ6RQ

Abstract: ERJ8BW
Contextual Info: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 ERJ BW, CW : 0402, 0603, 0805, 1206 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3B, 6B, 8B, 14B, 3R,

6bw 95

Abstract: TR 6BW 01 IC 7915
Contextual Info: V N E C ELECTRONI CS 6427525 N E C I NC 01 ELECTRONICS D E I bM 27 S 2S 00100=13 81C INC NEC NEC Electronics Inc. D e sc rip tio n The //PC356 is a J -F E T input operational amplifier with matched P-channel ion implanted J -F E T s. In addition to the obvious advantages of J -F E T inputs, the juPC356 Is

KW555

Abstract: w555 K889
Contextual Info: !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!""#$%&$!' *(+! !"#$!%&'()*$#+,"*)*-".)"'(&*/%#! ! ,-'./012034! ! ! ! ! ! ! )/G9)/%7%)DDE4564)J9:;92);2)=)X;:9XK0?I) )<9:=8;<)<G;R);?I0<3K:)3G=3)<K?QK:82)3K)3G9) ) $"+)23=?I=:I)5P5O)QKK3R:;?3)=?I)I9F;H9:2) !20R9:Y)E)=?I)J#A)R9:QK:8=?<9)X;3G)G;1G)

marking code 6BW

Abstract: 6BW MARKING 6BG TVS marking 6BN marking 6Cn marking 6ah SMA6J14A 6cg marking code SMA6J12 tvs 6ae
Contextual Info: SMA6J5.0 thru 40A Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AC SMA Cathode Band 0.065 (1.65) Stand-off Voltage 5.0 to 40V Peak Pulse Power 600W 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) t c u rod P New Mounting Pad Layout 0.066 MIN. (1.68 MIN.)

6BG marking DIODE

Abstract: diode 6BG
Contextual Info: SMA6J High junction temperature Transil Features • Peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Low clamping voltage versus standard series

6BG marking DIODE

Abstract: 6BW 81 6ba diode st 6ug 6BW marking SMA6J33A marking code 6BW SMA6J100CA-TR MARKING CODE 6BA transistor 6bw
Contextual Info: SMA6J High junction temperature Transil Features • Peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Low clamping voltage versus standard series

opo7c

Abstract: 0P07C
Contextual Info: ÆL—f r r u i m i TECHNOLOGY _QP-07 Precision Operational Amplifier F€flTUR€S DCSCRIPTIOn • Guaranteed 25^ V max. Offset Voltage ■ Guaranteed 0.6/zV/°C max. Offset Voltage Drift with Temperature ■ Excellent I.O^V/Month max. Long Term Stability

LDR03

Abstract: d13 -620 gh 6922 EH 14GW8 19BX6 ecc189 ECF80 equivalent BA 6688 L 6dl4 E88CC Telefunken
Contextual Info: TELEFUNKEN Röhren-Vergleichsliste List of comparative types Die in dieser Liste aufgeführten Vergleichstypen sind äquivalent. Eine absolute Identität ist nicht in jedem Fall gegeben, sie sind jedoch so ähnlich zueinander, daß ihre Verwendung für den gleichen Zweck möglich ist. Der Übersichtlichkeit wegen

transistor 6bw

Abstract: 3 PIN 6Bw transistor 6Bw transistor 6bw 12 transistor 6BW MARKING TOP marking 6BW
Contextual Info: r j urm TECHNOLOGY LTC125Q Very Low Noise Zero-Drift Bridge Amplifier FCfflURCS D CSCRIPTIOn • Very Low Noise: 0.75nVp.p Typ, 0.1 Hz to 10Hz ■ DC to 1Hz Noise Lower Than OP-07 ■ Full Output Swing into 1k Load ■ Offset Voltage: 10 iV Max ■ Offset Voltage Drift: 50nV/°C Max

Contextual Info: MM Registers - For a summary of all registers refer to the Register Summary section at the end of this chapter. All reserved bits must be written to a zero. NOTE: Control Registers 0x00— DS1/DS2 Output Control Register CR00

rd5106

Abstract: RD5106A RD6610A RD5107A RD661OA rd5107 RETICON RD510 RD6610ANP011 EGG RETICON
Contextual Info: Advance Information ¿n'^E E zG RETICON RD6610A 2048-Sample CCD Analog Delay Line Description 1 Clock The RD661OA is a 2048-sample analog delay line. It accepts an arbitrary analog voltage signal within certain voltage swing and bandwidth limits and outputs the same signal delayed in time.

marking code 6BW

Abstract: ERJA1 ERJB2
Contextual Info: 2014 CATALOG Fixed Resistors  LQGXVWULDOSDQDVRQLFFRP Fixed Resistors CONTENTS Product Item Type Safety Precautions Common precautions for Fixed Resistors Rectangular Type Surface Mount Resistors Attenuator Power Type 2 Thick Film Chip Resistors

phono preamplifier circuit diagram

Abstract: D547 "zero-bias schottky diode" ic 741 riaa PA111BM collimator U 1014N riaa preamplifier circuit diagram ST S734 OPA111AM
Contextual Info: H R - B R O W N OPA111 * OPA111 i I R H Q MILITARY & DIE V E R S IO N S A V A IL A B L E Low Noise Precision OPERATIONAL AMPLIFIER APPLICATIONS FEATURES • PRECISION INSTRUMENTATION • LOW NOISE: 100% tasted. B n V /V H z m ix at 10kHz • DATA ACQUISITION

dd417

Contextual Info: 'd a t a b427525 GÜM17SE ST2 « N E C E NEC sh eet MOS INTEGRATED CIRCUIT f juPD42S4260L, 424260L 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The /¿PD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs with optional fast page mode

diode S6 78A

Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
Contextual Info: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14

bt830

Contextual Info: Bt8340 DS3 Demultiplexer with LAPD Receiver The Bt8340 is a highly integrated DS3 framer and demultiplexer chip that when used with the companion Bt8350 DS3 multiplexer chip provides an efficient trans­ ceiver solution for M13 and M23 applications. The Bt8340 is compatible with