6AM1 Search Results

Contextual Info: 6AM14 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI November 1996 Application High speed power switching Features • • • • Low on-resistance Low drive current High speed switching High density mounting Outline 6AM14 Absolute Maximum Ratings Ta = 25°C

2SJ172

Abstract: 2SJ175 2SK1093 2SK970 6AM11 AM11 SP-12
Contextual Info: HITACHI 6AM11 S IL IC O N N-CHANNEL/P-CHANM EL P O W E R M O S F E T A R R A Y HIGH SPEED POW ER SWITCHING • FEA TU RES A.OtO. 2 • Low Qn-Resistance N-channel: Ros on ^ 0.17 Q , VG3 = 10 V, lD= 2.5 A P-channef: RDS (on) ^ 0.2 Q , VQS = -10 V, iD= -2.5 A

gd79

Abstract: Hitachi 2SJ Hitachi DSA002751
Contextual Info: 6AM13 Silicon N-Channel/P-Channel Complementary Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.075 Ω, VGS = 10 V, ID = 5 A P-channel: RDS(on) ≤ 0.12 Ω, VGS = –10 V, ID = –5 A

Hitachi DSA00315

Abstract: 6AM14
Contextual Info: 6AM14 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • • • • Low on-resistance Low drive current High speed switching High density mounting Outline SP-12TA 5 S 12 S Pch 6 G 11 G D3 8 G D7 9 G 4G Nch

lf7a

Contextual Info: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance N-channel: RDS on < 0.17 SI, VGS = 10 V, ID= 4 A P-channel: RDS(,m) < 0.2 £2, VGS = -1 0 V, ID= -4 A • Capable of 4 V gate drive

Contextual Info: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array HITACHI November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS o1i < 0.17 ¿1, VGS = 10 V, ID= 4 A P-channel: RDS(o1i) < 0.2 Q, VGS= -10 V, ID= -A A

Hitachi 2SJ

Abstract: Hitachi DSA002751
Contextual Info: 6AM11 Silicon N-Channel/P-Channel Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 Ω, VGS = 10 V, ID = 2.5 A P-channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –2.5 A • Capable of 4 V gate drive

Hitachi DSA002786

Contextual Info: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array Application High speed power switching Features • • • • • • Low on-resistance N-channel: RDS on ≤ 0.17 Ω, VGS = 10 V, ID = 4 A P-channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –4 A

6AM11

Abstract: SP-12 Hitachi DSA00316
Contextual Info: 6AM11 Silicon N-Channel/P-Channel Power MOS FET Array ADE-208-1215 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0.17 , VGS = 10 V, I D = 2.5 A P-channel: RDS(on) ≤ 0.2 , VGS = –10 V, I D = –2.5 A

RE025

Abstract: lf7a
Contextual Info: 6AM14 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI Application High speed power switching Features • • • • L ow on-resistance Low drive current High speed switching High density mounting Outline 641 6AM14 Absolute Maximum Ratings Ta = 25°C

Contextual Info: 6AM11 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance N-channel: RDS lin < 0.17 £2, Vos = 10 V, ID = 2.5 A P-channel: R DS(on) :£ 0.2 12, VGS = -1 0 V, ID = -2 .5 A • Capable of 4 V gate drive

6AM14

Abstract: Hitachi DSA00310
Contextual Info: 6AM14 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • • • • Low on-resistance Low drive current High speed switching High density mounting Outline 6AM14 Absolute Maximum Ratings Ta = 25°C Ratings

Hitachi DSA00300

Abstract: 6AM15
Contextual Info: 6AM15 Silicon N/P Channel MOS FET High Speed Power Switching ADE-208-719 Z 1st. Edition February 1999 Features • Low on-resistance N Channel : RDS(on) = 0.045 Ω typ. P Channel : RDS(on) = 0.085 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

Contextual Info: 6AM11 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI November 1996 Application High speed pow er switching Features • Low on-resistance N-channel: R DS o1i < 0.17 ¿1, V GS = 10 V, ID= 2.5 A P-channel: R DS(o1i) < 0.2 ¿1, V GS = -1 0 V, ID= -2 .5 A

Contextual Info: ECMF06-6AM16 Common mode filter with ESD protection for MIPI D-PHY and MDDI interface Datasheet − production data Description 1 The ECMF06-6AM16 is a highly integrated common mode filter designed to suppress EMI/RFI common mode noise on high speed differential serial buses like MIPI D-PHY or MDDI.

6AM12

Abstract: H-Bridge Hitachi DSA00316
Contextual Info: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array ADE-208-1216 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0.17 , VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.2 , VGS = –10 V, I D = –4 A

6am12

Abstract: 2SJ172 2SJ175 2SK1093 2SK970 d3125
Contextual Info: 6AM12 Silicon N Channel/P Channel Complementary Power MOS FET Array Application SP-12TA High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 Ω, VGS = 10 V ID = 4 A P-channel: RDS (on) ≤ 0.2 Ω, VGS = –10 V ID = –4 A

6AM13

Abstract: Hitachi DSA00316
Contextual Info: 6AM13 Silicon N-Channel/P-Channel Complementary Power MOS FET Array ADE-208-1217 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0.075 , VGS = 10 V, I D = 5 A P-channel: RDS(on) ≤ 0.12 , VGS = –10 V, I D = –5 A

Hitachi DSA002786

Contextual Info: 6AM13 Silicon N-Channel/P-Channel Complementary Power MOS FET Array Application High speed power switching Features • • • • • • Low on-resistance N-channel: RDS on ≤ 0.075 Ω, VGS = 10 V, ID = 5 A P-channel: RDS(on) ≤ 0.12 Ω, VGS = –10 V, ID = –5 A

Hitachi 2SJ

Abstract: Hitachi DSA002751
Contextual Info: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 Ω, VGS = 10 V, ID = 4 A P-channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –4 A

Hitachi DSA002751

Abstract: 6am14
Contextual Info: 6AM14 Silicon N-Channel/P-Channel Power MOS FET Array November 1996 Application High speed power switching Features • • • • Low on-resistance Low drive current High speed switching High density mounting Outline SP-12TA 5 S 12 S Pch 6 G 11 G D3 8 G

Hitachi DSA002723

Contextual Info: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 , VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.2 , VGS = –10 V, I D = –4 A • Capable of 4 V gate drive

2SJ172

Abstract: 2SJ175 2SK1093 2SK970 6AM11 Hitachi 2SJ Hitachi DSA00305
Contextual Info: 6AM11 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 Ω, VGS = 10 V, I D = 2.5 A P-channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, I D = –2.5 A • Capable of 4 V gate drive

6AM13

Abstract: 2SJ173 2SJ176 2SK1094 2SK971 6AM1
Contextual Info: 6AM13 Silicon N Channel/P Channel Complementary Power MOS FET Array Application SP-12TA High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.075 Ω, VGS = 10 V ID = 5 A P-channel: RDS (on) ≤ 0.12 Ω, VGS = –10 V ID = –5 A