6A. SOT 23 Search Results

Contextual Info: R6006AND Nch 600V 6A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 1.2W ID 6A PD 40W CPT3 (SC-63) (SOT-428) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.

BC817 cdil

Abstract: BC817 bc818 smd diode 6D SMD Transistor 6f smd transistor 6g BC817-16 BC817-25 BC817-40 BC818-16
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B

BC817

Abstract: BC817 smd bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 smd bc817
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H

BC817

Abstract: BC817 smd BC817 cdil bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E

Contextual Info: AP2324GN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Capable of 2.5V gate drive BVDSS D 20V RDS ON Lower Gate Charge 25m ID Surface mount package 6A S RoHS Compliant & Halogen-Free SOT-23 G D Description

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transisto rs Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H

MMBF4416

Contextual Info: MMBF4416 MMBF4416 N-Channel RF Amplifiers G • This device is designed for RF amplifiers. • Sourced from process 50. S D SOT-23 Mark: 6A Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDG Drain-Gate Voltage Parameter Value 30 Units V VGS

MMBT4416

Abstract: RF Amplifiers
Contextual Info: MMBT4416 MMBT4416 N-Channel RF Amplifiers G • This device is designed for RF amplifiers. • Sourced from process 50. S D SOT-23 Mark: 6A Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDG Drain-Gate Voltage Parameter Value 30 Units V VGS

MMBF4416

Contextual Info: MMBF4416 MMBF4416 N-Channel RF Amplifiers G • This device is designed for RF amplifiers. • Sourced from process 50. S D SOT-23 Mark: 6A Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDG Drain-Gate Voltage Parameter Value 30 Units V VGS

Contextual Info: AP2324GN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive D ▼ Lower Gate Charge BVDSS 20V RDS ON 25mΩ ID ▼ Surface mount package 6A S ▼ RoHS Compliant & Halogen-Free SOT-23

MMBF4416

Contextual Info: MMBF4416 MMBF4416 N-Channel RF Amplifiers G • This device is designed for RF amplifiers. • Sourced from process 50. S D SOT-23 Mark: 6A Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDG Drain-Gate Voltage Parameter Value 30 Units V VGS

MMBF4416

Abstract: FAIRCHILD SOT-23 MARK 30 RF Amplifiers rf fairchild transistor 100mhz rf fairchild transistor 100mhz amplifier
Contextual Info: MMBF4416 N-Channel RF Amplifiers • This device is designed for RF amplifiers. • Sourced from process 50. G S SOT-23 D Mark: 6A Absolute Maximum Ratings T =25°C unless otherwise noted A Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage

M00X

Abstract: APM2600C APM2600 STD-020C
Contextual Info: APM2600C N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/6A, RDS ON =22mΩ(typ.) @ VGS=10V RDS(ON)=26mΩ(typ.) @ VGS=4.5V • • • Super High Dense Cell Design Reliable and Rugged Top View of SOT-23-6 Lead Free Available (RoHS Compliant)

6A marking sot23

Abstract: BC817 SOT23 marking 6A marking 6A SOT 23 6A MARKING
Contextual Info: SEMICONDUCTOR BC817 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 6A 1 2 Item Marking Description Device Mark 6 BC817 hFE Grade A 16 A , 25(B) * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note) * Lot No. marking method

Contextual Info: LESHAN RADIO COMPANY, LTD. LN2502LT1G S-LN2502LT1G 20V N-Channel Enhancement-Mode MOSFET VDS= 20V 3 RDS ON , Vgs@2.5V, Ids@5.2A = 50mΩ RDS(ON), Vgs@4.5V, Ids@6A = 40mΩ 1 2 SOT– 23 (TO–236AB) Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance

Contextual Info: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2502LT1G VDS= 20V 3 RDS ON , Vgs@2.5V, Ids@5.2A = 40mΩ RDS(ON), Vgs@4.5V, Ids@6A = 30mΩ 1 2 SOT– 23 (TO–236AB) Features 3 D Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance

APM2300C

Abstract: apm2300ca
Contextual Info: APM2300CA N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/6A , RDS ON =25mΩ (typ.) @ VGS=10V RDS(ON)=32mΩ (typ.) @ VGS=4.5V RDS(ON)=40mΩ (typ.) @ VGS=2.5V RDS(ON)=65mΩ (typ.) @ VGS=1.8V • • • Top View of SOT-23 Super High Dense Cell Design

APM2300C

Abstract: APM2300CA STD-020C MARKING TR SOT23-3 P MOSFET
Contextual Info: APM2300CA N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/6A , RDS ON =25mΩ (typ.) @ VGS=10V RDS(ON)=32mΩ (typ.) @ VGS=4.5V RDS(ON)=40mΩ (typ.) @ VGS=2.5V RDS(ON)=65mΩ (typ.) @ VGS=1.8V • • • Top View of SOT-23 Super High Dense Cell Design

Contextual Info: VNN7NV04, VNS7NV04 VND7NV04, VND7NV04-1 OMNIFET II fully autoprotected Power MOSFET Features Type RDS on VNN7NV04 VNS7NV04 VND7NV04 VND7NV04-1 Ilim Vclamp 2 1 60 mΩ 6A 40 V 2 3 SO-8 SOT-223 • Linear current limitation ■ Thermal shutdown ■ Short circuit protection

VND7NV04-E

Abstract: VND7NV04 VND7NV04-1 VND7NV0413TR VND7NV04-1-E VNN7NV04 VNN7NV0413TR VNS7NV04 VNS7NV0413TR TO-251 footprint
Contextual Info: VNN7NV04, VNS7NV04 VND7NV04, VND7NV04-1 OMNIFET II fully autoprotected Power MOSFET Features Type RDS on VNN7NV04 VNS7NV04 VND7NV04 VND7NV04-1 Ilim Vclamp 2 1 60 mΩ 6A 2 3 SO-8 SOT-223 40 V • Linear current limitation ■ Thermal shutdown ■ Short circuit protection

M00X

Abstract: APM2600 AAAX APM2600C A102 sot-23-6 n-channel mosfet apm26
Contextual Info: APM2600C N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/6A, D D S RDS ON =22mΩ(typ.) @ VGS=10V RDS(ON)=26mΩ(typ.) @ VGS=4.5V • • • Super High Dense Cell Design D Reliable and Rugged D G Top View of SOT-23-6 Lead Free and Green Devices Available

Contextual Info: VNN7NV04, VNS7NV04 VND7NV04, VND7NV04-1 OMNIFET II fully autoprotected Power MOSFET Features Type RDS on VNN7NV04 VNS7NV04 VND7NV04 VND7NV04-1 Ilim Vclamp 2 1 60 mΩ 6A 40 V 2 3 SO-8 SOT-223 • Linear current limitation ■ Thermal shutdown ■ Short circuit protection

VND7NV04-E

Abstract: Power logic MOSFET SOT-223 pulse load calculation formula for single pulse TO252 VND7NV04 VND7NV04-1 VND7NV0413TR VND7NV04-1-E VNN7NV04 VNN7NV0413TR
Contextual Info: VNN7NV04, VNS7NV04 VND7NV04, VND7NV04-1 OMNIFET II fully autoprotected Power MOSFET Features Type RDS on VNN7NV04 VNS7NV04 VND7NV04 VND7NV04-1 Ilim Vclamp 2 1 60 mΩ 6A 2 3 SO-8 SOT-223 40 V • Linear current limitation ■ Thermal shutdown ■ Short circuit protection

APM2300CA

Abstract: apm2300c A102 sot-23 MOSFET Marking code 6A C00X
Contextual Info: APM2300CA N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/6A , RDS ON =25mΩ (typ.) @ VGS=10V D S RDS(ON)=32mΩ (typ.) @ VGS=4.5V G RDS(ON)=40mΩ (typ.) @ VGS=2.5V RDS(ON)=65mΩ (typ.) @ VGS=1.8V • • • Top View of SOT-23 Super High Dense Cell Design