6A SMD TRANSISTOR Search Results

Contextual Info: Transistors IC SMD Type Product specification FCX790A Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics. Low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -50

MARKING SMD PNP TRANSISTOR 2a

Abstract: MARKING SMD pnp TRANSISTOR 790 vce 24 icm 1a SMD TRANSISTOR MARKING 2A MARKING SMD PNP TRANSISTOR TRANSISTOR SMD 1a 9 TRANSISTOR SMD PNP 1A FCX790A
Contextual Info: Transistors SMD Type PNP Silicon Power Switching Transistor FCX790A Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics. Low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

MARKING SMD npn TRANSISTOR 1a

Abstract: smd transistor marking br MARKING SMD npn TRANSISTOR 690 transistor Ic 1A datasheet NPN transistor smd 6a 9v smd transistor npn smd 2a smd transistor MARKING 2A npn SMD TRANSISTOR MARKING 2A smd transistor marking 1A
Contextual Info: Transistors SMD Type NPN Silicon Power Switching Transistor FCX690B Features 2W power dissipation. 6A peak pulse current. Gain of 400 @IC=1Amp. Very low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

Contextual Info: Transistors IC SMD Type Product specification FCX619 Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics up to 6 amps. Extremely low saturation voltage E.g. 13mv Typ. Extremely low equivalent on-resistance. RCE sat 87mÙ at 2.75A.

Contextual Info: Transistors IC SMD Type Product specification FCX718 Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics up to 6 Amps. Extremely low saturation voltage E.g. 16mv Typ. Extremely low equivalent on-resistance. RCE sat 96mÙ at 2.5A.

Contextual Info: Transistors IC SMD Type Product specification FCX690B Features 2W power dissipation. 6A peak pulse current. Gain of 400 @IC=1Amp. Very low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 45 V Collector-emitter voltage

smd marking 619

Abstract: npn smd 2a transistor smd 6a MARKING SMD npn TRANSISTOR 1a FCX619 transistor marking 6A 6a smd transistor
Contextual Info: Transistors SMD Type NPN Silicon Power Switching Transistor FCX619 Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics up to 6 amps. Extremely low saturation voltage E.g. 13mv Typ. Extremely low equivalent on-resistance. RCE sat 87mÙ at 2.75A.

KZT2955

Abstract: CZT2955
Contextual Info: Transistors IC SMD Type 2.0W Surface Mount Complementary PNP Silicon Power Transistor KZT2955 CZT2955 SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 +0.2 -0.2 Low voltage (max. 60V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 High current (max. 6A).

CZT3055

Abstract: 30ma 40v npn KZT3055
Contextual Info: Transistors IC SMD Type 2.0W Surface Mount Complementary NPN Silicon Power Transistor KZT3055 CZT3055 SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 +0.2 -0.2 Low voltage (max. 60V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 High current (max. 6A).

smd transistor 718

Abstract: MARKING SMD PNP TRANSISTOR 718 MARKING SMD PNP TRANSISTOR 2a FCX718 transistor smd 6a 6a smd transistor MARKING SMD PNP TRANSISTOR smd 6a transistor
Contextual Info: Transistors SMD Type PNP Silicon Power Switching Transistor FCX718 Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics up to 6 Amps. Extremely low saturation voltage E.g. 16mv Typ. Extremely low equivalent on-resistance. RCE sat 96mÙ at 2.5A.

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transisto rs Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H

BC817

Abstract: BC817 smd BC817 cdil bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E

Contextual Info: Transistors SMD Type Product specification FZT749 SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 0.1max +0.05 0.90-0.05 25 Volt VCEO. 3 Amp continuous current. +0.1 3.00-0.1 Low saturation voltage. +0.15 1.65-0.15 Features +0.2 0.90-0.2 +0.3 7.00-0.3 4 Excellent hFE specified up to 6A .

Contextual Info: FEATURES High efficiency: 89.5%@ 12Vin, 3.3V/6A out Small size and low profile: SMD 27.90x 11.4x 7.1mm (1.10” x 0.45” x 0.28”) Surface mount packaging Standard footprint Voltage and resistor-based trim Pre-bias startup Output Voltage tracking No minimum load required

DNS12S0A

Abstract: DNS12S0A0S06PFA DNS12S0A0S06 ps2 CIRCUIT power diagram ps2 CIRCUIT diagram
Contextual Info: FEATURES High efficiency: 89.5%@ 12Vin, 3.3V/6A out Small size and low profile: SMD 27.9x 11.4x 7.1mm (1.10” x 0.45” x 0.28”) Surface mount packaging Standard footprint Voltage and resistor-based trim Pre-bias startup Output Voltage tracking No minimum load required

transistor smd 6a

Abstract: smd 1C 2945A m 830 smd Transistor Mosfet N-Ch 30V
Contextual Info: Transistors IC SMD Type 30V Complementary PowerTrench MOSFET KI4542DY Features N-Channel 6 A, 30 V RDS ON = 28m @ VGS = 10V RDS(ON) = 35m @ VGS =4.5V P-Channel -6 A, -30 V RDS(ON) = 32m @ VGS =- 10 V RDS(ON) = 45m @ VGS =-4.5V Absolute Maximum Ratings Ta = 25

6a smd transistor

Abstract: transistor smd 6a equivalent smd mosfet PD-23 2SJ598 smd 6a transistor smd transistor 720 102-130 mosfet VDS 30V ID 6A TO 252
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SJ598 TO-252 RDS on 2 = 190 m MAX. (VGS = -4.0 V, ID =-6 A) Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max +0.28 1.50-0.1 Built-in gate protection diode +0.15 0.50-0.15

6a smd transistor

Abstract: fzt851 npn smd 2a smd transistor 2A smd transistor MARKING 2A npn transistor smd 6a transistor marking 6A smd 6a transistor
Contextual Info: Transistors SMD Type NPN Silicon Planar High Current High Performance Transistor FZT851 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Extremely low equivalent on-resistance; RCE(sat)44mÙ at 5A. +0.1 3.00-0.1 6 Amps continuous current, up to 20 Amps peak current.

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

FZT853

Abstract: npn smd 2a smd transistor 2A 6a smd transistor
Contextual Info: Transistors SMD Type NPN Silicon Planar High Current Transistor FZT853 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Extremely low equivalent on-resistance; RCE sat 44mÙ at 5A +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3

Contextual Info: Transistors SMD Type Product specification FZT853 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Extremely low equivalent on-resistance; RCE sat 44mÙ at 5A +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 6 Amps continuous current, up to 20 Amps peak current

transistor smd 6a

Abstract: 6a smd transistor smd transistor 2A smd transistor marking br TRANSISTOR SMD 1a 9 FZT649
Contextual Info: Transistors SMD Type NPN Silicon Planar High Performance Transistor FZT649 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 25 Volt VCEO. 3 Amp continuous current. +0.1 3.00-0.1 +0.15 1.65-0.15 Features Unit: mm +0.2 0.90-0.2 +0.3 7.00-0.3 Low saturation voltage.

transistor smd 6a

Abstract: fzt749 transistor marking 6A transistor FZT749 6a smd transistor
Contextual Info: Transistors SMD Type NPN Silicon Planar Medium Power Transistor FZT749 SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 0.1max +0.05 0.90-0.05 25 Volt VCEO. 3 Amp continuous current. +0.1 3.00-0.1 Low saturation voltage. +0.15 1.65-0.15 Features +0.2 0.90-0.2

Contextual Info: Transistors IC SMD Type Logic level TOPFET KUK129-50DL TO-263 Unit: mm Features 1 .2 7 -0+ 0.1.1 TrenchMOS output stage Current limiting +0.1 1.27-0.1 +0.2 4.57-0.2 Protection latched reset by input 0.1max +0.1 1.27-0.1 Control of output stage and supply of overload protection