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    6MBP75RJ120 Search Results

    6MBP75RJ120 Datasheets (2)

    Fuji Electric
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    6MBP75RJ120
    		Fuji Electric IGBT IPM R-series 1200V class 1200V / 75A 6 in one-package Original PDF 304.35KB 8
    6MBP75RJ120
    		Fuji Electric IGBT IPM Original PDF 304.01KB 8

    6MBP75RJ120 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    500w inverter circuit diagram

    Abstract: diagram inverter 500w 450G KHZ
    Contextual Info: 6MBP75RJ120 1200V / 75A 6 in one-package IGBT IPM R-series 1200V class Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection


    Original     		6mbp75rj120trr125irr125irr25+3500w inverter circuit diagramdiagram inverter 500w450g khz PDF

    6MBP75RJ120

    Abstract: AC2500 HCPL4504 P621 TLP521 all transistor P621 P6211 P621 ic MT6M4057
    Contextual Info: SPECIFICATION Device Name : IGBT - IPM Type Name : 6MBP75RJ120 Spec. No. : MS6M 0711 Fuji Electric Co.,Ltd. Matsumoto Factory Feb. 05 ‘03 N.Matsuda Feb. 05 ‘03 Nishiura Feb.-05 -‘03 K.Yamada T.Fujihira MS6M 0711 a 1 22 H04-004-07 Revised Records Date


    Original     		6mbp75rj120h04-004-07feb-05-h04-004-06+9h04-004-03ac2500hcpl4504p621tlp521all transistor p621p6211p621 icmt6m4057 PDF

    6mbp20rta060

    Abstract: TLP521-1GR 6MBP15RA120 7MBP50RA120 application note P621 TOSHIBa 6mbp50rt REH984 6MBP150TEA060 P621 6mbp100ra120
    Contextual Info: Quality is our message FUJI IGBT–IPM APPLICATION MANUAL Sep. 2004 REH983a CONTENTS Chapter 1 Features 1. GBT-IPMs Characteristics .1-2 2. IPM Characteristics by Series .1-4


    Original     		reh983a6mbp20rta060tlp521-1gr6mbp15ra120+77mbp50ra120 application notep621 toshiba6mbp50rtreh9846mbp150tea060p6216mbp100ra120 PDF

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original     		rh011h2007-10b120fismp2a5100ya868c12+8ya868c152sk4004yg865c10f5049diode 3a05diode smd sj 24diode smd sj 09diode smd sj 28 PDF

    2MBI450U4E-120

    Abstract: 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120
    Contextual Info: パワーデバイス/Power Devices IGBT • IGBTモジュールの特長 Features of the IGBT Module 第6世代IGBTモジュール Vシリーズ 6th Gen. IGBT Module V-series ■特長 Features パッケージ小型化と出力のパワー UP を実現！


    Original     		max1752mbi600tn-060v2mbi450un-120v2mbp600un-120v+102mbi450u4e-1202mbi400u4h-1202mbi300u4h-120thyristor tc1226mbp75ru2a1202mbi75u4a-1207mbp75ru2a1202mbi75u4a1207mbr25sa120 052mbi200u4h-120 PDF