6900 MOSFET Search Results

smd diode marking code t056

Abstract: xf075 xf017 tyco igbt module 25A Thermistor PTC 265V* xf017 XF090 raychem* XF090 xf065 PolySwitch Resettable Devices xf250 PTC XF010
Contextual Info: Circuit Protection Business Unit Headquarters 308 Constitution Drive, Building H Menlo Park, CA USA 94025-1164 Tel : 800 227-7040, (650) 361-6900 Fax : (650) 361-4600 www.circuitprotection.com www.circuitprotection.com.hk (Chinese) www.tycoelectronics.com/japan/raychem (Japanese)

1262-33

Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
Contextual Info: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.

POWER MOSFET 4600

Abstract: MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90
Contextual Info: HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode B Type " dbmm e«» m ax. m ax. m ax. Chip typ * Chip sue cHmehsfons Tm = 150°C V Q A 1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.012 0.006 0.004 IXFD67N10-7X XFD75N10-7X

Contextual Info: PRODUCT DETAIL Part Num: IXTC180N10T Description: POWER DEVICES > DISCRETE MOSFETs > N-Channel: Trench-Gate Power MOSFETs > 55V to 280V Trench MOSFETs Configuration: Single Package Style: ISOPLUS220 Status: Phase out/Obsolete: Contact the factory for availability and last time buys.

Contextual Info: Solid State Relays Datasheet WG F8 Comus International Bvba Overhaamlaan 40 3700 Tongeren, Belgium Phone: +32 12390400 Fax: +32 12235754 Email: info@comus.be www.comus.be Features Switching Direct Output MOS-FET Input DC Applications Resistive, capacitive and inductive DC loads

Contextual Info: Solid State Relays Datasheet WG F8 Comus International Bvba Overhaamlaan 40 3700 Tongeren, Belgium Phone: +32 12390400 Fax: +32 12235754 Email: info@comus.be www.comus.be Features Switching Direct Output MOS-FET Input DC Applications Resistive, capacitive and inductive DC loads

f400d

Abstract: diode wg mosfet wit frequency range WG s 35 comus wg f 100 d 15 wg 8 s
Contextual Info: Solid State Relays Datasheet WG F Comus International Bvba Overhaamlaan 40 3700 Tongeren, Belgium Phone: +32 12390400 Fax: +32 12235754 Email: info@comus.be www.comus.be Features Switching Random Output MOS-FET Input DC Applications Resistive and Inductive DC loads

Contextual Info: Solid State Relays Datasheet WG F Comus International Bvba Overhaamlaan 40 3700 Tongeren, Belgium Phone: +32 12390400 Fax: +32 12235754 Email: info@comus.be www.comus.be Features Switching Random Output MOS-FET Input DC Applications Resistive and Inductive DC loads

FS70UM-2

Abstract: QJD0142002 "dual MOSFET Module" "MOSFET Module"
Contextual Info: QJD0142002 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Dual Power MOSFET Module 100 Volts 420 Amperes Description: Powerex Dual Mosfet Module designed specially for customer applications. Features: • • • • • • • Isolated Mounting

"MOSFET Module"

Abstract: "dual MOSFET Module" 6900 mosfet FS70UMJ-2 QJD0142003
Contextual Info: QJD0142003 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Dual Power MOSFET Module 100 Volts 420 Amperes Description: Powerex Dual Mosfet Module designed specially for customer applications. Features: • • • • • • • Isolated Mounting

P channel MOSFET 50A

Abstract: MOSFET 450 FS100VSJ-02A
Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET ARY FS100VSJ-02A FS100VSJ-02A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS100VSJ-02A

APT50M40

Contextual Info: PRODUCTS - Low Loss Power MOSFETs POWER MOS 7TMP W Low Loss MOSFETs E N WITH ALL THE BENEFITS OF POWER MOS V .PLUS Low Gate Charge Low Capacitances Low Loss Conduction & Switching Faster Switching / Lower Switching Losses . The lower capacitances combined with the

Contextual Info: Preliminary Technical Information TrenchTM Power MOSFET Common-Gate Pair IXTL2x180N10T VDSS ID25 = = RDS on ≤ 100V 2x100A Ω 9mΩ (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol Test Conditions

Si7156DP

Abstract: S-80731
Contextual Info: SPICE Device Model Si7156DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

DIODE LT 6203

Abstract: FDN306 Rubycon photoflash LT03 LT1739 LT3420 SRW10EPC-U01H003 LT6204 LTC4412 LTC6900
Contextual Info: LinearTechnologyChronicle A Showcase of Linear Technology’s Focus Products August 2002 Vol. 11 No. 08 English International Product of the Month 100MHz Rail-to-Rail, 3mA IQ Op Amps Have Only 1.9nV/ Hz Noise—LT6203/LT6204 The LT 6203 and LT6204 are dual and

0-007Q

Abstract: sml10m07jvr
Contextual Info: Illl Vrr r = mi SML10M07JVR SEME LAB S O T -2 2 7 P ackage O utline. 5TH GENERATION MOSFET Dimensions in mm inches 1 1.8 (0 .4 6 3 ) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS I D(cont) ^DS(on) • • • • 100V 225A 0.007Q Faster Switching

Contextual Info: Preliminary Technical Information IXTL2x180N10T TrenchTM Power MOSFET Common-Gate Pair VDSS ID25 = = RDS on ≤ 100V 2x100A Ω 9mΩ (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol Test Conditions

offline UPS

Abstract: MOSFET 923 54 IXTL2x180N10T
Contextual Info: Advance Technical Information TrenchMVTM Power MOSFETs Common-Gate Pair IXTL2x180N10T D VDSS = 100 V ID25 = 2x100 A Ω RDS on ≤ 7.4 mΩ D (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated RG S RG ISOPLUS i5-PakTM (IXTL) G S

Contextual Info: ADVAN CED P o w er Te c h n o l o g y APT10M07JVR 100V ' 225A 0.007a POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs VDSS ID25 RDS on IXFK 60N55Q2 IXFX 60N55Q2 Q-Class = = = trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Symbol Test Conditions Maximum Ratings

SiR494DP

Contextual Info: SPICE Device Model SiR494DP Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: AP30N30WI Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET  100% Avalanche Test D  Simple Drive Requirement  Lower On-resistance 250V RDS ON 68m ID G  RoHS Compliant BVDSS 30A S Description AP30N30 from APEC provide the designer with the best combination

Contextual Info: AP85T10AGI-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Lower On-resistance Fast Switching Characteristic 100V RDS ON 8m ID G RoHS Compliant & Halogen-Free BVDSS 50A S Description

AP30N30W

Contextual Info: AP30N30W Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Simple Drive Requirement ▼ Lower On-resistance 250V RDS ON 68mΩ ID G ▼ RoHS Compliant BVDSS 36A S Description AP30N30 from APEC provide the designer with the best combination of fast