69-206 TRANSISTOR Search Results

sl-100 TRANSISTOR

Abstract: MQC207 OC205 OC206
Contextual Info: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA M O C 205 M O C 206 MOC2Q7 Sm all Outline Optoisolators Transistor Output These devices co nsist o f a g a lliu m arsenide in fra re d e m ittin g d io d e o p tic a lly coup le d to a m o n o lith ic silico n p h o to tra n s is to r d ete cto r, in a surface m o u n ta b le , sm a ll o u tlin e ,

AT00510

Abstract: at-00510 TRANSISTOR MAC 223
Contextual Info: HEWLETT-PACKARD/ H EW LETT Whn% w 'rm Cf l PNTS PACKARD b l E I> • AT-00510 4447564 427 Up to 4 GHz General Purpose Silicon Bipolar Transistor Features • • • • • 0010473 100 mil Package 16.0 dBm typical Pi dB at 2.0 GHz 10.5 dB typical GidB at 2.0 GHz

J03 SOT23

Abstract: BC 327 SOT 23 SO2894 2907 21E sot MARK T5 sot A2N transistor 2907 pnp transistor BC178A SO2906R
Contextual Info: A C T IV E COMPONENTS FO R H Y B R ID C IR C U ITS COMPOSANTS A C T IF S POUR C IR C U ITS H Y B R ID E S ë CB-166 SOT-23 Silicon PNP transistors, switching and general purpose , Mark ing Marq uage Type T ype N R * Pin co nf. Brochage Transistors PNP silicium usage général et commutation

Contextual Info: AVANTEK I N C 20E 0A V A N TEK D im n tb QGQb43T 1 AT-00510 Up to 4 GHz General Purpose Silicon Bipolar Transistor Avantek 100 mit Package Features • 16.0 dBm typical Pi dB at 2.0 GHz • • • • 10.5 dB typical Gi dB at 2.0 GHz 2.5 dB typical NF0 at 2.0 GHz

Contextual Info: HEWLETT-PACKARD/ • 7 1« CPIPNTS b lE HEW LETT mPPM P I> ■ MM475A4 ME? AT-00510 Up to 4 GHz General Purpose Silicon Bipolar Transistor a c k a rd Features • • • • • OOI OMTB 100 mil Package 16.0 dBm typical Pi dB at 2.0 GHz 10.5 dB typical Gi hb at 2.0 GHz

bc 540

Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
Contextual Info: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0

KHB4D0N80F

Abstract: khb*4D0N80F2 KHB4D0N80F2
Contextual Info: SEMICONDUCTOR KHB4D0N80P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N80P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

SML45G60AN

Abstract: SULB
Contextual Info: SEMELAB PLC_ bDE D • 0133167 □DDGiGQ Mflfl ■ ■ SULB llll MOS POWER 4 IGBT 'Psvsi m SEME SML45G60AN LAB 600V 45A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.

micronote 103

Abstract: PLAD15KP PLAD30KP 1N6461 30KPxx 1.5ke series RTCA DO-160 microsemi TVS ARINC 582 RT130KP
Contextual Info: APPLICATION NOTE MicroNote 132 AIRCRAFT LIGHTNING PROTECTION A Shortcut to Selecting Transient Voltage Suppressors for RTCA/DO-160E Threats Using Microsemi's New DIRECTselect™ Method by Mel Clark Table of Contents Background 3 Abnormal Voltage Characteristics

2n3250A

Abstract: 2n3251a
Contextual Info: SEMICONDUCTOR! TECHNICAL DATA 2N3250A 2N3251A CR YST ALOfJCS 2805 Vet«r»>s Highway Suite 14 Ronkorkorna, N Y. 1177t PNP Silicon Small-Signal Transistors . designed for general-purpose switching and amplifier applications MAXIMUM RATINGS Rating Unit Symbol

CS2002

Contextual Info: Intended for the integration of complex circuits, the GENESIS 5000 linear array has over 300 transistors and includes 20 macrocell “tiles” organized in a 4 x 5 matrix. This approach allows circuit functions to be replicated simply by transferring the layout to another cell.

vhdl code for 16 BIT BINARY DIVIDER

Abstract: vhdl code for multiplexer 16 to 1 using 4 to 1 in vhdl code for multiplexer 32 BIT BINARY VHDL code for PWM vhdl code for motor speed control vhdl code for multiplexer 16 to 1 using 4 to 1 vhdl code for multiplexer 32 to 1 gray to binary code converter 32 BIT ALU design with vhdl code 4 bit binary multiplier Vhdl code
Contextual Info: Digital Design Using Digilent FPGA Boards ─ VHDL / Active-HDL Edition Table of Contents 1. Introduction 1.1 Background 1.2 Digital Logic 1.3 VHDL 1 1 5 8 2. Basic Logic Gates 2.1 Truth Tables and Logic Equations The Three Basic Gates Four New Gates 2.2 Positive and Negative Logic: De Morgan’s Theorem

STR 6454

Abstract: str f 6454 str G 5551 47 datasheet str f 6454 str g 5551 3573 1231 str 6454 datasheet LT 7229 LA 4636 str 6353
Contextual Info: HP Components Authorized Distributor and Representative Directory Alabama Allied Electronics 1-800-433-5700 California Allied Electronics 1-800-433-5700 Arrow Electronics 1015 Henderson Rd. Huntsville 35816 205 837-6955 Arrow Electronics 26677 W. Agoura Rd.

str 6353

Abstract: str 6454 str w 6353 str f 6454 Commander CV 150 74146 Alexander Hamilton 3573 1231 ME20 str G 5551 47
Contextual Info: HP Components Authorized Distributor and Representative Directory Alabama Allied Electronics 1-800-433-5700 California Allied Electronics 1-800-433-5700 Arrow Electronics 1015 Henderson Rd. Huntsville 35816 205 837-6955 Arrow Electronics 26677 W. Agoura Rd.

P153 transistor

Contextual Info: FLAT PANEL TYPE MULTIANODE PHOTOMULTIPLIER TUBE ASSEMBLY H9500, H9500-03 52 mm Square, Bialkali Photocathode, 12-stage, 16 x 16 Multianode, Small Dead Space, Fast Time Response FEATURES ●Small Animal Imaging ●Compact Gamma Camera ●Scinti-mammography

Contextual Info: WJ-A61-1 /SMA61-1 2 to 6 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH: 1-6 GHz TYP. HIGH POWER: +20 dBm (TYP.) LOW NOISE: 3.4 dB (TYP.) Specifications* Outline Drawings A61-1 Guaranteed Typical Characteristics 0° to 50°C

P181 Japan

Abstract: qse-040-01-f-d-a AB p89 H9500 p181 gr transistor p88 transistor P239 transistor p89 transistor p86 P177 transistor
Contextual Info: FLAT PANEL TYPE MULTIANODE PHOTOMULTIPLIER TUBE ASSEMBLY H9500 52 mm Square, Bialkali Photocathode, 12-stage, 16 x 16 Multianode, Small Dead Space, Fast Time Response APPLICATIONS ● Small Animal Imaging ● Compact Gamma Camera ● Scinti-mammography ● 2D Radiation Monitor

465B

Abstract: 700B ARF465A ARF465B VK200-4B
Contextual Info: ARF465A ARF465B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 300V 150W 60MHz The ARF465A and 465B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.

465B

Abstract: 700B ARF465A ARF465B VK200-4B
Contextual Info: ARF465A ARF465B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 300V 150W 60MHz The ARF465A and 465B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.

Contextual Info: ARF465A ARF465B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 300V 150W 60MHz The ARF465A and 465B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.

NEC D 553 C

Abstract: TRANSISTOR MAC 223 NEC IC D 553 C
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance C re = 0.3 pF TYP.

"VDSS 800V" 40A mosfet

Abstract: 800V 40A mosfet KHB4D0N80F1 KHB4D0N80F2 KHB4D0N80P1 khb*4D0N80F2
Contextual Info: SEMICONDUCTOR KHB4D0N80P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N80P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

KHB4D0N80F2

Abstract: KHB4D0N80F1 khb*4D0N80F2 KHB4D0N80P1 800V 40A mosfet A10150 "VDSS 800V" 40A mosfet
Contextual Info: SEMICONDUCTOR KHB4D0N80P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N80P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

R1C11

Abstract: r6c1
Contextual Info: Configuration selection generates starting addresses at either zero or 3FFFF, to be compatible with different microprocessor addressing conventions. The Master Serial Mode generates CCLK and receives the configuration data in serial form from configuration data in serial form from a