68C DIODE Search Results

Contextual Info: H n ACH 1 H O P T O E L b C I RUN 1 Ò S 5 - iiS S T u b • 7 ' * 1? D T ~ O t'l3 09808 K Controlled Avalanche Diode 1 1 1 7 "“ • 68C M »E iMMTbEOS QDOTflafl h | T TrSv» :12° ~400V

TS68C901B

Abstract: 68C901 delay lines thomson csf tp 9730 TS68C901 TS68C901BME4 TS68C901BMCB Thomson-CSF transmitter TS68C901BM 68000 thomson
Contextual Info: TS 68C 901B HCMOS MULTI FUNCTION PERIPHERAL DESCRIPTION The TS68C901B m ulti function peripheral CMFP is a member of the TS 68000 Family of peripheral and the CMOS version of the TS 68901. The CMFP directly interfaces to the TS 68000 processor fam ily via an asynchronous bus

68c DIODE

Contextual Info: N AtlER PHILIPS/DISCRETE [i bb53131 QQEODQ6 A • BDX68; 68A BDX68B; 68C E5E D J V r- 33-31 DARLINGTON POWER TRANSISTORS P-N-P Darlingtons for audio output stages and general amplifier and switching applications. In a TO-3 envelope. N-P-N complements are BDX69, BDX69A, BDX69B and BDX69C.

Hitachi Scans-001

Abstract: DAG1A05
Contextual Info: bfl • DE I 44^205 ODOTfllS Ö *ty.ÿ'i # — F Suppression Diode H DAG1A "44962ÜS V r r m : 5 0 V -4 0 0 V *F(AV) : 1 .0 A HITACHI/CÜPTOkLECTRONICS) 68C 0 9 8 1 2 P : 100W r iv i D T~0(-(5 62M IN.(2.44) Color of cathode band 29MIN. 5M AX. 29MIN. 03 .5 M A X .

BDX69

Abstract: 68A diode BDX68 BDX68B BDX69A BDX69B BDX69C diode 68A transistor 68c
Contextual Info: I [ L N AMER PHILIPS/DISCRETE: E5E D • bb53131 □QSQDQI '' A ■ BDX68; 68A BDX68B; 68C T-33-3! DARLINGTON POWER TRANSISTORS P-N-P Darlingtons for audio output stages and general amplifier and switching applications. In a TO-3 envelope. N-P-N complements are BDX69, BDX69A, BDX69B and BDX69C.

j2kg

Abstract: JT-V
Contextual Info: 449fc>2Ub H i I ACH1 / O P TQ tLE C TR U TTTÜ S l— • 68C 0 9 8 0 0 T-OhtS K (Controlled Avalanche Diode 7 '< 17 V08 "bfl DE | -29MIN (1.14) MMTbaDS G Q tnflQ D 1 Jj (0.14) «*3.5 MAX (2.44) -62M IN5.0MAX C o lo r o f c ath o d e Type , M T n . u )1

W09B

Abstract: W09C 1SR56-100 1SR56-200 1SR56-50 W09A 50V-200V hitachi Black FAST RECOVERY DIODE 1SR56 Hitachi Scans-001
Contextual Info: / Ö P T Ü E L k U i HUN I C S • 68C — K (Fast Recovery Diode) tfi 09822 DE^'HLSDS D DODTñEE I W09 ¿ — -62MINI2.44)5.0MAX -29M IN -29MIN ( 0 2 ) T (1.14) (1.14) CO H S <•* Symbol Cathode hanrl' band T '- Ç î' (f 0 T~ V RR M : 50V-200V *F(AV) :0 .6 A

FHF100-200_300-C_A_3D

Abstract: V09G i2t class CC
Contextual Info: = 5 ^ 0 • S H I I AcH '68C 0 9 8 2 4 =i* —-K Fast Recovery Diode DE I bfl mlH LSOS D D OC Hf l S H T V09 4£ T -Q 2 > '1 \ V r r m : 200V~600V lF(AV) : 0.8A trr: 0.4^s 03.5 M A X (0.14) T yp e \? p Symbol(Blue) Cathode band C o lo r o f cathode band

V30J

Abstract: V30N 1SR11
Contextual Info: - 4 '4 9 f& flftr f f î f W itf 17 ' O P IO b L b C l KUNTU51 ~ ~ • —jföSSfcffl>V a > y * f * - K (General-Use Rectifier Diode 68C r| bfl 09786 MM^bSOS DE V30 J) i 6 2 M IN .I2 .4 4 ) 29M IN . 5M A X . (1.14) Type 0 3 .5 M A X . 10.141 29M IN . (1.14)

U15J

Abstract: U15G 1SR11 1SR117 1SR117-400
Contextual Info: 4 4 9 6 2 0 5' H I T A C H I / O P T O E L E C T R O N I C S “-• —AxSEaftffl '>>)=>> ¥ -i U15 68C 0 9 7 9 8 D T - 0 \ " l3 — K (General Use Rectifier Diode) bfl DE I L m b 2 D 5 QOCHTTfl ? | z V RRM : 1 0 0 V -8 0 0 V u • f (A V ): 3 0 A

Contextual Info: V17 4 4 9 6 2 0 5 H I T A C H I / C O P T O E Œ ü T R O N ICS 1— 68C 098 04 z ìi ^ — Y Controlled Avalanche Diode) bfl DE|44TbSOS - 6: - • - 2 9 M I N _ (1 .1 4 ) V r RM : 100V~400V lF(AV) : 1 3A Va VL: 805VMAX. GOOTflOM T I (0 .1 4 )

68000 thomson

Abstract: EF6854 RAW MATERIAL INSPECTION instruction EF6852
Contextual Info: o THOMSON COMPOSANTS MILITAIRES ET SPATIAUX TS 68C 000 LOW POWER HCMOS 16/32 BIT MICROPROCESSOR DESCRIPTION The TS 68C000 reduced power consumption device dissipa­ te s an o rde r o f m a gn itu d e less pow er than th e HMOS TS 68000. The TS 68C000 is an im p le m e n ta tio n o f the

V11N

Contextual Info: vir 44"y'6iiUb • H 1 I AÜHl # — / .U P I U t L h Ü I KUN1U S — — 68C 09818 'f'-cß- 9 K (Fast Recovery Diode V rR M : 80 0 V—1500V lF(AV) : 0 .4 A trr : 0.4a<s 0 3 .5 M A X (0 .1 4 ) -6 2 M IN I2 .4 4 ) - 2 9 M IN J i £ M * .£ - 2 9M lN ._ |

1SR119

Abstract: CV19B
Contextual Info: — ttm rss • H M a u h íT ío p iu e le c iro n ic s T 68C 09 8 26 -f st — K Fast Recovery Diode V19 Tfl DE I M M T L E D S ODCHûEb ñ -62M IN(2.44)29M INI1.14)5.0M AX -2 9 M IN (0 . 2 ) (1.14) Symbol (Blue) S (0.14) „ 03.5 MAX T yp e V r r m : 1 0 0 V -6 0 0 V

Hitachi DSA00309

Contextual Info: HZU6.8L Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-678 Z Rev 0 July 1998 Features • Lower reverse current leakage compared with conventional products. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information

Hitachi DSA00218

Contextual Info: HZU6.8L Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-678 Z Rev 0 Jul. 1998 Features • Lower reverse current leakage compared with conventional products. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information

c58c

Contextual Info: 3 KP 5,0 . 3 KP 120CA ,* @ 5 8   .   Absolute Maximum Ratings Symbol Conditions   -   .    Values Units C < 6 < 5 * 26 H;< " H;< 2;2 B $  ./  8 2+ , @ 5  Axial lead diode Unidirectional and bidirectional Transient

U058

Abstract: 1S2455 U05G 1S2458 Diode U05B U05B
Contextual Info: 4 4 9 6 2 0 5 HI T A C H I / O P T O t L h C T R O N I C S -• — ÜSÎËîifcffl '> ') 3 V ¿fof i [ — K (General-Use Rectifier Diode) U05 T ñ DE | MMTbEDS O D D W b -2 8 M IN ( 1 .1 ) 7.0MAX Type ¿5M A X -2 8 M IN —“ ( 1 . 1) a* (0.28) m

78C7

Abstract: 6C86 c282 C586 568C CC8C C585
Contextual Info: 3 KP 5,0 . 3 KP 120CA ,* @ 5 8   .   Absolute Maximum Ratings Symbol Conditions   -   .    Values Units C < 6 < 5 * 26 H;< " H;< 2;2 B $  ./  8 2+ , @ 5  +8  *#+ 4  '   .    =%4  - 

Contextual Info: HZU6.8L Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-678 Z Rev 0 July 1998 Features • Lower reverse current leakage compared with conventional products. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information

Contextual Info: SCHOTTKY BARRIER DIODE 41MQ50 41MQ60 44A/50~60V FEATURES a Hermetically Sealed Case ° High Reliability Device ° Low Forward Power Loss, High Efficiency ° High Surge Capability »30 Volts through 60 Volts Types Available MAXIMUM RATINGS Voltage Rating \

diode 6v8a

Abstract: diode 33CA 012 6V8A diode 6V8C 6V8C 6v8ca 737 39A diode 39CA 6v8a 15CA
Contextual Info: Silicon Avalanche Diodes 600W Surface Mount Transient Voltage Suppressors P6SMBJ Series Protect sensitive electronics against voltage transients induced by inductive load switching and lightning. Ideal for the protection of I/O interfaces, Vcc bus and other integrated circuits.

diode 6v8a

Abstract: 39ca diode 6V8C diode 33CA 6v8ca 8v2a 33ca marking 12CA on 6v8a 62ca
Contextual Info: Silicon Avalanche Diodes 600W Surface Mount Transient Voltage Supressors P6SMBJ Series Protect sensitive electronics against voltage transients induced by inductive load switching and lightning. Ideal for the protection of I/O interfaces, Vcc bus and other integrated circuits.

1S2080

Abstract: 1S2082 V06T V06C HITACHI V06C 1S2081 V06J hitachi V06E hitachi rectifier V06C hitachi V06
Contextual Info: - ^ 4 9 6 2 O 5 HITACHI M Ü P T O E L h ü T R O N l U ä ^ • — Ä S V06 ^ ; 6 8 C 0 9 7 9 2 . 0 ô/'/X 'f ^ — K General-Use Rectifier Diode bû DE J ^ b E O S QDOTT^E -6 2 M IW 2 .4 4 )-2 9M IN 5 .0 M A X ¿ 3.5M A X (0.14)