68964 Search Results

Contextual Info: New Product Si4838BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 ID (A)a RDS(on) (Ω) 0.0027 at VGS = 4.5 V 34 0.0032 at VGS = 2.5 V 31 0.0040 at VGS = 1.8 V 28 Qg (Typ.) 33 nC • • • • Halogen-free TrenchFET Power MOSFET

Si4838BDY

Abstract: 68964
Contextual Info: New Product Si4838BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 4.5 V 34 0.0032 at VGS = 2.5 V 31 0.0040 at VGS = 1.8 V 28 VDS (V) 12 Qg (Typ.) 33 nC • • • • Halogen-free TrenchFET Power MOSFET

Contextual Info: Ordering number : ENN6896 NPN Triple Diffused Planar Silicon Transistor 2SC5690 ISAfiYOi Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • • Package Dimensions High speed. High breakdown voltage VCBO= 1500V .

13001 TRANSISTOR

Abstract: transistor s 13001 2SC5690 c s 13001 TRANSISTOR 13001 npn 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN 13001 TRANSISTOR sw 13001 SW 8A TA-3087
Contextual Info: Ordering number : ENN6896A 2SC5690 NPN Triple Diffused Planar Silicon Transistor 2SC5690 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).

epcos NTC Thermistor S 234

Abstract: icl 7669 NTC 4,7 1235 Thermistors EPCOS ntc k45 ntc b57045 k45 47056 B57045K0104K000 B57045K0682K000 M 47056 B57045K0473K000
Contextual Info: NTC thermistors for temperature measurement Probe assemblies Series/Type: Date: B57045 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

Contextual Info: New Product Si4838BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 4.5 V 34 0.0032 at VGS = 2.5 V 31 0.0040 at VGS = 1.8 V 28 VDS (V) 12 Qg (Typ.) 33 nC • • • • Halogen-free TrenchFET Power MOSFET

epcos 565-2

Abstract: epcos 4215 565-2 EPCOS 627000 icl 2822 TH 2053.3 121800 246770 44568 transistor g 10597
Contextual Info: NTC thermistors for temperature measurement Leaded NTCs, lead spacing 2.5 mm Series/Type: Date: B57891 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

Contextual Info: New Product Si4838BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 4.5 V 34 0.0032 at VGS = 2.5 V 31 0.0040 at VGS = 1.8 V 28 VDS (V) 12 Qg (Typ.) 33 nC • • • • Halogen-free TrenchFET Power MOSFET

13001 TRANSISTOR

Abstract: 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN 13001 TRANSISTOR sw transistor s 13001 c s 13001 TRANSISTOR 13001 npn 13001 SW 8A 2SC5690 all transistor 13001
Contextual Info: Ordering number : ENN6896 2SC5690 NPN Triple Diffused Planar Silicon Transistor 2SC5690 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).

Contextual Info: New Product Si4838BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 4.5 V 34 0.0032 at VGS = 2.5 V 31 0.0040 at VGS = 1.8 V 28 VDS (V) 12 Qg (Typ.) 33 nC • • • • Halogen-free TrenchFET Power MOSFET

NTC 4,7 1235 Thermistors EPCOS

Abstract: K164 B57164K0103J000 icl 7103 B57164K0682k000 B57164K0104J000 38957 ICL 7108 NTC 1000-9 18526
Contextual Info: NTC thermistors for temperature measurement Leaded NTCs, lead spacing 5 mm Series/Type: Date: B57164 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

Si4838BDY

Contextual Info: New Product Si4838BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 4.5 V 34 0.0032 at VGS = 2.5 V 31 0.0040 at VGS = 1.8 V 28 VDS (V) 12 Qg (Typ.) 33 nC • • • • Halogen-free TrenchFET Power MOSFET

744049

Abstract: 642639E 30359 362610E 707001E 740417 543301E-3 43403 32240 74127
Contextual Info: S-Parameter Narrow RF1400D 03/09/04 # HZ S RI R 50 431420000. .658264E+0 .485841E-3 .637421E+0 431432500. .657867E+0 .502661E-3 .636993E+0 431445000. .657623E+0 .505368E-3 .636780E+0 431457500. .657440E+0 .524466E-3 .636536E+0 431470000. .657166E+0 .540092E-3 .636475E+0