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    Cal-Chip Electronics GMC32X7R684K100NT

    CAP1210 X7R .68UF 10% 100V
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    DigiKey () GMC32X7R684K100NT Digi-Reel 4,400 1
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    GMC32X7R684K100NT Cut Tape 4,400 1
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    GMC32X7R684K100NT Tape & Reel 4,000 2,000
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    Cal-Chip Electronics GMC31X7R684K100NT

    CAP1206 X7R .68UF 10% 100V
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    DigiKey () GMC31X7R684K100NT Digi-Reel 3,900 1
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    GMC31X7R684K100NT Cut Tape 3,900 1
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    GMC31X7R684K100NT Tape & Reel 2,000 2,000
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    Cal-Chip Electronics GMC31X5R684K100NT

    CAP1206 X5R .68UF 10% 100V
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    DigiKey () GMC31X5R684K100NT Digi-Reel 2,000 1
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    GMC31X5R684K100NT Cut Tape 2,000 1
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    GMC31X5R684K100NT Tape & Reel 2,000 2,000
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    Cal-Chip Electronics GMC43X7R684K100NT

    CAP1812 X7R .68UF 10% 100V
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    DigiKey () GMC43X7R684K100NT Tape & Reel 1,000 1,000
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    GMC43X7R684K100NT Digi-Reel 1,000 1
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    GMC43X7R684K100NT Cut Tape 1,000 1
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    KEMET Corporation MMK15684K100B04L4BULK

    680NF1 10%V
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    DigiKey MMK15684K100B04L4BULK Bulk 4,000
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    Avnet Americas MMK15684K100B04L4BULK Bulk 27 Weeks 4,000
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    Avnet Abacus MMK15684K100B04L4BULK 143 Weeks 1,000
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    684 K 100 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TIC682

    Abstract: HC682 kd 617 SN54HC682 SN54HC684 SN74HC682 SN74HC684 pq11 hc1011
    Contextual Info: SN54HC682, SN54HC684 SN74HC682, SN74HC684 8 BIT MAGNITUDE COMPARATORS 19 8 4 -R E V IS peiS E P T E M B E R 19 8 7 0280' S N 54H C 682^«M 54H C 684 . D W O ft N ^ A C K A G I S N 74H C 682, S N 74H C 684 Compares Two 8-Bit Words 'H C 682 has 100-kil Pullup Resistors on the


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    SN54HC682, SN54HC684 SN74HC682, SN74HC684 HC682 100-kil 300-mil SN54HC682 TIC682 kd 617 SN74HC682 pq11 hc1011 PDF

    Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N : CL21A684KOFNNNE • Product : Multi-layer Ceramic Capacitor • Description : CAP, 680㎋, 16V, ±10%, X5R, 0805 A. Samsung Part Number ① Series CL 21 A 684 K O F N N N E ① ② ③


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    CL21A684KOFNNNE 12/-0hrs 500Mohm 25Mohm 1000Mohm 50Mohm 48/-0hrs 10sec. PDF

    Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics  Samsung P/N : CL21B684KOFNFNE  Product : Multi-layer Ceramic Capacitor  Description : CAP, 680㎋, 16V, ±10%, X7R, 0805 A. Samsung Part Number ① Series CL 21 B 684 K O F N F N E ① ② ③


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    CL21B684KOFNFNE 25Mohm 12/-0hrs 48/-0hrs 1000Mohm 50Mohm 10sec. PDF

    Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N : CL05A684KQ5NNNC • Product : Multi-layer Ceramic Capacitor • Description : CAP, 680㎋, 6.3V, ±10%, X5R, 0402 A. Samsung Part Number ① Series CL 05 A 684 K Q 5 N N N C ① ② ③


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    CL05A684KQ5NNNC 12/-0hrs 48/-0hrs 10sec. PDF

    Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics  Samsung P/N : CL31B684KAHNNNE  Product : Multi-layer Ceramic Capacitor  Description : CAP, 680㎋, 25V, ±10%, X7R, 1206 A. Samsung Part Number ① Series ② Size CL 31 B 684 K A H N N N E ①


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    CL31B684KAHNNNE 10sec. PDF

    A18E

    Abstract: TAG D2 Q.E D61 A12E a18e 40 TAG 88 tag13 CY2305 CYM76S683 CYM76S684
    Contextual Info: fax id: 2044 : . m i'im m m n k ¿¡¡¡¡¡¡¡¡¡¡*£^ : : ; i : : : js j’5“ : M M M : M M M : : : p ^ ^ PRELIMINARY CYM76S683/684 512K/1M L2 Cache Module for Power PC Systems Features • High-performance cache modules based on synchronous 64K x 18 data BSRAM


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    CYM76S683/684 512K/1M 160-position A18E TAG D2 Q.E D61 A12E a18e 40 TAG 88 tag13 CY2305 CYM76S683 CYM76S684 PDF

    224 K capacitor

    Abstract: kemet capacitor C0603 EIA481-1 j 182 capacitor 334 ceramic U 821 B C0402 C0805 561 6.3v C1206
    Contextual Info: KEMET CERAMIC CHIP/STANDARD FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and


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    EIA481-1. IEC60286-6 224 K capacitor kemet capacitor C0603 EIA481-1 j 182 capacitor 334 ceramic U 821 B C0402 C0805 561 6.3v C1206 PDF

    transistor mj11032 equivalent

    Abstract: transistor mj11028 equivalent MJ11032 equivalent MJ11028-29 Transistor 3296 Variable Resistor 1k ohm 2SC493 AMPLIFIER 2SD718 2sb688 schematic 2sd717 MJ11030 equivalent BU326
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 Min @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc


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    TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N6490 transistor mj11032 equivalent transistor mj11028 equivalent MJ11032 equivalent MJ11028-29 Transistor 3296 Variable Resistor 1k ohm 2SC493 AMPLIFIER 2SD718 2sb688 schematic 2sd717 MJ11030 equivalent BU326 PDF

    mj11015 equivalent

    Abstract: MJ11016 equivalent 2SC1096 equivalent nsd15 MJ3237 BU108 BD875 equivalent MJ4502 EQUIVALENT 2SD718 2sb688 amplifier schematic SDN6000
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 Min @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor


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    TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N6490 mj11015 equivalent MJ11016 equivalent 2SC1096 equivalent nsd15 MJ3237 BU108 BD875 equivalent MJ4502 EQUIVALENT 2SD718 2sb688 amplifier schematic SDN6000 PDF

    TIP142 TRANSISTOR REPLACEMENT

    Abstract: replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V


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    TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 TIP73B TIP74 TIP74A TIP74B TIP142 TRANSISTOR REPLACEMENT replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142 PDF

    kemet capacitor C0603

    Abstract: capacitor 334 Kemet capacitors c0603 c0805 c1206 capacitor 334 ceramic C1206 KEMET C1206 KEMET packaging kemet capacitor C0805 IEC60286-6 Kemet capacitors c0603 EIA481-1
    Contextual Info: KEMET CERAMIC CHIP/STANDARD FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and


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    EIA481-1. IEC60286-6 C0805 C1206 C1210 kemet capacitor C0603 capacitor 334 Kemet capacitors c0603 c0805 c1206 capacitor 334 ceramic C1206 KEMET C1206 KEMET packaging kemet capacitor C0805 Kemet capacitors c0603 EIA481-1 PDF

    motorola MJ15001

    Abstract: BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Transistors NPN MJ15001 PNP MJ15002 The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —


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    MJ15001 MJ15002 MJ15002 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A motorola MJ15001 BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139 PDF

    MJ15023 EQUIVALENT

    Abstract: MJ15024 MJ15025 BU108 2SC1943 2SC1419 BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ15023 MJ15025 * Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *Motorola Preferred Device • High Safe Operating Area 100% Tested —


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    MJ15023 MJ15025 MJ15025 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJ15023 EQUIVALENT MJ15024 MJ15025 BU108 2SC1943 2SC1419 BU326 BU100 PDF

    IC 3526

    Abstract: transistor MJ15024 tip3055 equivalent RCA1C13 BU108 2N6277 applications MJ3247 BDX54 motorola MJ3000 2N3791 equivalent
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD802 Plastic High Power Silicon PNP Transistor 8 AMPERE POWER TRANSISTORS PNP SILICON 100 VOLTS 65 WATTS . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 1.0 Adc


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    BD802 BD802 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C IC 3526 transistor MJ15024 tip3055 equivalent RCA1C13 BU108 2N6277 applications MJ3247 BDX54 motorola MJ3000 2N3791 equivalent PDF

    equivalent to tip162

    Abstract: 2SA1046 2N3055 BU108 2n6258 BU326 BU100 BD262 buv23 2n5632
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors 2N6338 2N6339 2N6340 2N6341* . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) — 2N6338


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    2N6338 2N6339 2N6340 2N6341 2N6436 Continu32 TIP73B TIP74 TIP74A TIP74B equivalent to tip162 2SA1046 2N3055 BU108 2n6258 BU326 BU100 BD262 buv23 2n5632 PDF

    TIP36

    Abstract: BD413 2SC331 BD139.6 BD139.10 BDW59 2sc2159 BD139.16 BD419 2SD364
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ410 High Voltage NPN Silicon Transistors 5 AMPERE POWER TRANSISTOR NPN SILICON 200 VOLTS 100 WATTS . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage —


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    MJ410 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 TIP36 BD413 2SC331 BD139.6 BD139.10 BDW59 2sc2159 BD139.16 BD419 2SD364 PDF

    2SA1046

    Abstract: 2N6275 equivalent BU108 TR TIP2955 MOTOROLA 2N6277 BU806 Complement BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO sus = 100 Vdc (Min) — 2N6274 VCEO(sus) = 120 Vdc (Min) — 2N6275


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    2N6274 2N6275 2N6277 2N6377 2N6277* POWER32 TIP73B TIP74 2SA1046 2N6275 equivalent BU108 TR TIP2955 MOTOROLA 2N6277 BU806 Complement BU326 BU100 PDF

    mje340 equivalent

    Abstract: 2SC7 BD801 transistor bd 242 CASE 221A-04 BD8015 rca3055 equivalent BU326 BU108 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 Plastic High Power Silicon NPN Transistor 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 1.0 Adc


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    BD801 BD801 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje340 equivalent 2SC7 transistor bd 242 CASE 221A-04 BD8015 rca3055 equivalent BU326 BU108 BU100 PDF

    mj15003 equivalent

    Abstract: 2n3055 MJ15003 2N3055 BU108 motorola MJ15003 BDX54 MJ15004 BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon Power Transistors MJ15003* PNP MJ15004* The MJ15003 and MJ15004 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —


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    MJ15003 MJ15004 MJ15003* MJ15004* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A mj15003 equivalent 2n3055 MJ15003 2N3055 BU108 motorola MJ15003 BDX54 BU326 BU100 PDF

    BU108

    Abstract: 2SA1046 BDX54 BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5745 See 2N4398 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE POWER TRANSISTOR NPN SILICON 100 – 140 VOLTS 150 WATTS . . . designed for use in high power audio amplifier applications and high voltage


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    2N5745 2N4398) 2N5758 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 2SA1046 BDX54 BU326 BU100 PDF

    MJ4502 EQUIVALENT

    Abstract: BU108 BU806 Complement BDX54 BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ4502 High-Power PNP Silicon Transistor 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — hFE = 25 – 100 @ IC = 7.5 A


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    MJ4502 MJ802 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C MJ4502 EQUIVALENT BU108 BU806 Complement BDX54 BU326 BU100 PDF

    BU108

    Abstract: D44C12 BDX54 electronic ballast with MJE13003 BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18002D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP*, to design


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    MJE18002D2 MJE18002D2 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 D44C12 BDX54 electronic ballast with MJE13003 BU326 BU100 PDF

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


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    48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent PDF

    BD127

    Abstract: transistor 2SA1046 2SD630 electronic ballast MJE13005 transistor bd4202 BD388 electronic ballast with MJE13003 motorola AN485 2SC122 transistor Electronic ballast mje13007
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18206 MJF18206  Data Sheet SWITCHMODE NPN Designer's Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS The MJE/MJF18206 have an application specific state–of–the–art die dedicated to


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    MJE/MJF18206 MJE18206 MJF18206 POW32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD127 transistor 2SA1046 2SD630 electronic ballast MJE13005 transistor bd4202 BD388 electronic ballast with MJE13003 motorola AN485 2SC122 transistor Electronic ballast mje13007 PDF