684 K 100 Search Results

TIC682

Abstract: HC682 kd 617 SN54HC682 SN54HC684 SN74HC682 SN74HC684 pq11 hc1011
Contextual Info: SN54HC682, SN54HC684 SN74HC682, SN74HC684 8 BIT MAGNITUDE COMPARATORS 19 8 4 -R E V IS peiS E P T E M B E R 19 8 7 0280' S N 54H C 682^«M 54H C 684 . D W O ft N ^ A C K A G I S N 74H C 682, S N 74H C 684 Compares Two 8-Bit Words 'H C 682 has 100-kil Pullup Resistors on the

Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N : CL21A684KOFNNNE • Product : Multi-layer Ceramic Capacitor • Description : CAP, 680㎋, 16V, ±10%, X5R, 0805 A. Samsung Part Number ① Series CL 21 A 684 K O F N N N E ① ② ③

Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics  Samsung P/N : CL21B684KOFNFNE  Product : Multi-layer Ceramic Capacitor  Description : CAP, 680㎋, 16V, ±10%, X7R, 0805 A. Samsung Part Number ① Series CL 21 B 684 K O F N F N E ① ② ③

Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N : CL05A684KQ5NNNC • Product : Multi-layer Ceramic Capacitor • Description : CAP, 680㎋, 6.3V, ±10%, X5R, 0402 A. Samsung Part Number ① Series CL 05 A 684 K Q 5 N N N C ① ② ③

Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics  Samsung P/N : CL31B684KAHNNNE  Product : Multi-layer Ceramic Capacitor  Description : CAP, 680㎋, 25V, ±10%, X7R, 1206 A. Samsung Part Number ① Series ② Size CL 31 B 684 K A H N N N E ①

A18E

Abstract: TAG D2 Q.E D61 A12E a18e 40 TAG 88 tag13 CY2305 CYM76S683 CYM76S684
Contextual Info: fax id: 2044 : . m i'im m m n k ¿¡¡¡¡¡¡¡¡¡¡*£^ : : ; i : : : js j’5“ : M M M : M M M : : : p ^ ^ PRELIMINARY CYM76S683/684 512K/1M L2 Cache Module for Power PC Systems Features • High-performance cache modules based on synchronous 64K x 18 data BSRAM

224 K capacitor

Abstract: kemet capacitor C0603 EIA481-1 j 182 capacitor 334 ceramic U 821 B C0402 C0805 561 6.3v C1206
Contextual Info: KEMET CERAMIC CHIP/STANDARD FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and

transistor mj11032 equivalent

Abstract: transistor mj11028 equivalent MJ11032 equivalent MJ11028-29 Transistor 3296 Variable Resistor 1k ohm 2SC493 AMPLIFIER 2SD718 2sb688 schematic 2sd717 MJ11030 equivalent BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 Min @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc

mj11015 equivalent

Abstract: MJ11016 equivalent 2SC1096 equivalent nsd15 MJ3237 BU108 BD875 equivalent MJ4502 EQUIVALENT 2SD718 2sb688 amplifier schematic SDN6000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 Min @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor

TIP142 TRANSISTOR REPLACEMENT

Abstract: replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V

kemet capacitor C0603

Abstract: capacitor 334 Kemet capacitors c0603 c0805 c1206 capacitor 334 ceramic C1206 KEMET C1206 KEMET packaging kemet capacitor C0805 IEC60286-6 Kemet capacitors c0603 EIA481-1
Contextual Info: KEMET CERAMIC CHIP/STANDARD FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and

motorola MJ15001

Abstract: BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Transistors NPN MJ15001 PNP MJ15002 The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —

MJ15023 EQUIVALENT

Abstract: MJ15024 MJ15025 BU108 2SC1943 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ15023 MJ15025 * Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *Motorola Preferred Device • High Safe Operating Area 100% Tested —

IC 3526

Abstract: transistor MJ15024 tip3055 equivalent RCA1C13 BU108 2N6277 applications MJ3247 BDX54 motorola MJ3000 2N3791 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD802 Plastic High Power Silicon PNP Transistor 8 AMPERE POWER TRANSISTORS PNP SILICON 100 VOLTS 65 WATTS . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 1.0 Adc

equivalent to tip162

Abstract: 2SA1046 2N3055 BU108 2n6258 BU326 BU100 BD262 buv23 2n5632
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors 2N6338 2N6339 2N6340 2N6341* . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) — 2N6338

TIP36

Abstract: BD413 2SC331 BD139.6 BD139.10 BDW59 2sc2159 BD139.16 BD419 2SD364
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ410 High Voltage NPN Silicon Transistors 5 AMPERE POWER TRANSISTOR NPN SILICON 200 VOLTS 100 WATTS . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage —

2SA1046

Abstract: 2N6275 equivalent BU108 TR TIP2955 MOTOROLA 2N6277 BU806 Complement BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO sus = 100 Vdc (Min) — 2N6274 VCEO(sus) = 120 Vdc (Min) — 2N6275

mje340 equivalent

Abstract: 2SC7 BD801 transistor bd 242 CASE 221A-04 BD8015 rca3055 equivalent BU326 BU108 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 Plastic High Power Silicon NPN Transistor 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 1.0 Adc

mj15003 equivalent

Abstract: 2n3055 MJ15003 2N3055 BU108 motorola MJ15003 BDX54 MJ15004 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon Power Transistors MJ15003* PNP MJ15004* The MJ15003 and MJ15004 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —

BU108

Abstract: 2SA1046 BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5745 See 2N4398 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE POWER TRANSISTOR NPN SILICON 100 – 140 VOLTS 150 WATTS . . . designed for use in high power audio amplifier applications and high voltage

MJ4502 EQUIVALENT

Abstract: BU108 BU806 Complement BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ4502 High-Power PNP Silicon Transistor 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — hFE = 25 – 100 @ IC = 7.5 A

BU108

Abstract: D44C12 BDX54 electronic ballast with MJE13003 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18002D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP*, to design

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

BD127

Abstract: transistor 2SA1046 2SD630 electronic ballast MJE13005 transistor bd4202 BD388 electronic ballast with MJE13003 motorola AN485 2SC122 transistor Electronic ballast mje13007
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18206 MJF18206  Data Sheet SWITCHMODE NPN Designer's Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS The MJE/MJF18206 have an application specific state–of–the–art die dedicated to